391results about How to "Good planarity" patented technology

A rotary chuck with indexed rotation promotes rapid rotation of a device under test and increases the productivity of a probe station on which the device is being tested. A device mounting member of a rotatable chuck is supported for rotation on a first surface of a base until a vacuum is applied drawing the device mounting member into contact with a second surface of the base and constraining the device mounting member against rotation.

New, versatile finishing surfaces are described. Unitary finishing elements having discrete finishing members attached to unitary resilient body are disclosed for finishing microdevices such as semiconductor wafers. Finishing surfaces such as discrete finishing members can be comprised of a multiphase polymeric composition. The new unitary finishing elements have lower cost to manufacture and high precision. The unitary finishing elements and finishing surfaces can reduce unwanted surface defect creation on the semiconductor wafers during finishing.

The invention relates to an organic semiconductor material containing naphthalene [1, 2-c: 5, 6-c] di [1, 2, 5] thiadiazole and application thereof, wherein the organic semiconductor material is prepared by reacting the halogenated derivatives with the monomer containing an aromatic group structure under the metal catalyst, wherein the halogenated derivatives are obtained by halogenating the naphthalene [1, 2-c: 5, 6-c] di [1, 2, 5] thiadiazole; the aromatic group is connected with a naphthalene [1, 2-c:5, 6-c] di [1, 2, 5] thiadiazole unit in a conjugate manner. The organic semiconductor material is characterized by containing 3, 7 substituted decorative[1, 2-c: 5, 6-c] di [1, 2, 5] thiadiazole chemical groups; as the naphthalene [1, 2-c:5, 6-c] di [1, 2, 5] thiadiazole has excellent electron-withdrawing ability and planarity, the organic semiconductor material can excellently adjust the photoelectric property, has excellent photoelectric performance, and is applied to the field of organic photoelectric components.

The invention discloses a low-temperature diffusion welding method for magnesium alloy and aluminum alloy. The method comprises the following steps of: (1) workpiece surface cleaning: processing a magnesium alloy plate and an aluminum alloy plate to a specified size, and removing oxide layers from to-be-welded surfaces thereof; (2) workpiece assembly: placing a tin-zinc alloy foil serving as a middle layer between the aluminum alloy plate and the magnesium alloy plate, and placing a solder mask on and below the plates respectively to form a welded workpiece; and (3) charging the workpiece into a furnace and welding: putting the welded workpiece into a vacuum diffusion welding furnace, performing heating and heat preservation, applying an axial pressure to the welded workpiece when the heat preservation begins, and releasing the pressure when the heat preservation is finished. The method can effectively overcome the defect that the prior art cannot realize high-quality welding between the Mg alloy and the Al alloy, is suitable for reliable welding between the Mg alloy and the Al alloy of different categories, is particularly suitable for welding the thin magnesium alloy plate and the thin aluminum alloy plate, and has good welding planarity, high parallel precision and integral compactness.

A method for manufacturing a semiconductor substrate is provided, which comprises a step of irradiating a single crystal semiconductor substrate with ions to form an embrittlement layer in the single crystal semiconductor substrate, a step of forming a silicon oxide film over the single crystal semiconductor substrate, a step of bonding the single crystal semiconductor substrate and a substrate having an insulating surface with the silicon oxide film interposed therebetween, a step of performing a thermal treatment, and a step of separating the single crystal semiconductor substrate with a single crystal semiconductor layer left over the substrate having the insulating surface.

A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid.

There has been a trade-off between the rigidity and the mass of a movable section of a microactuator, and also between the rigidity of the movable section and the electrostatic force. A microactuator 100 includes: a base 1; a first comb electrode 2 supported by the base 1; a movable section 6 having a second comb electrode 8 opposing the first comb electrode 2, and at least one reinforcement rib 9 protruding toward the base 1; and an elastic supporting member 3 for supporting the movable section 6 so as to allow the movable section 6 to be displaced with respect to the base 1. The height of the second comb electrode 8 is different from the height of the at least one reinforcement rib 9.

Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase epitaxy, a first Group-III nitride crystal (2) onto a base substrate (1); and a step of growing, by vapor-phase epitaxy, a second Group-III nitride crystal (3) onto the first Group-III nitride crystal (2). The Group-III nitride crystal substrate, produced by such a manufacturing method, has a dislocation density of 1×10⁷ dislocations/cm².

The invention relates to a triazine compound. The structural formula of the triazine compound is as shown in formula I, wherein L is substituted or non-substituted C6-C24 arylidene; n is 0 or 1; Py is substituted or non-substituted C3-C24 nitrogen-containing heterocyclic groups or nitrogen-containing heterocyclic condensation groups; Ac1 and Ac2 are substituted or non-substituted C12-C48 nitrogen-containing heterocyclic condensation groups; Ac1 and Ac2 can be identical ort different. The invention further relates to a light-emitting device containing the triazine compound. When two nitrogen-containing heterocyclic condensation groups are connected with a triazine group, certain angles are formed between the nitrogen-containing heterocyclic condensation groups and the triazine group due to steric hindrance, and TADF design is achieved.

The invention provides an organic semiconducting polymer and a solar battery comprising the same. The organic semiconducting polymer has a structure as shown in a chemical formula (1).

The invention belongs to the field of chemical drugs, and discloses a ruthenium complex capable of inhibiting tumor angiogenesis and a preparation method and application thereof. The ruthenium complex provided by the invention has a structure shown in a formula I or II. The preparation method comprises the following steps of: dropwise adding a silver nitrate solution to a sodium salt solution, stirring and reacting, then filtering, washing and vacuum drying a precipitate, and thereby obtaining a ligand O-O; taking ruthenium chloride, L, and lithium chloride to be dissolved in N-, N-dimethyl formamide, heating and refluxing under the protection of argon atmosphere to obtain an intermeidate Ru (L2) Cl22 +; allowing the ligand O-O and the Ru (L2) Cl22 + to be dissolved in an ethanol/water mixed solvent, heating and refluxing to obtain the ruthenium complex shown in the formula I; and allowing the Ru (L2) Cl22 +, 8- hydroxyquinoline, and ammonium acetate to be dissolved in ethanol, and heating and refluxing under the protection of argon atmosphere to obtain the ruthenium complex shown in the formula II. The ruthenium complex has the advantages of good stability, uneasiness in hydrolysis, good solubility, low toxicity, and the ability to inhibit tumor angiogenesis, and is easily absorbed by the human body.

Disclosed are a method of fabricating a quasi-substrate wafer (17) with a subcarrier wafer (4) and a growth layer (120), and a semiconductor body fabricated using such a quasi-substrate wafer (17). In the method of fabricating a quasi-substrate wafer (17), a growth substrate wafer (1) is fabricated that is provided with a separation zone (2) and comprises the desired material of the growth layer (120). The growth substrate wafer (1) is provided with a stress that counteracts a stress generated by the formation of the separation zone, and/or the stress generated by the formation of the separation zone is distributed, by structuring a first main face (101) of the growth substrate wafer (1) and/or the separation zone (2), to a plurality of subregions along the first main face (101). The growth substrate wafer (1) with separation zone (2) exhibits no or only slight bowing.

The invention relates to nine-membered fused ring derivatives as well as a synthesis method and application thereof. According to the synthesis method, five-membered ring units are coupled with phenyl sulfoxide units for ring-fused reactions, so that aromatic compounds adopting the nine-membered macrocyclic structures are obtained. The nine-membered fused ring derivatives are high in thermal stability and hole mobility, and can serve as active layers applied to organic field-effect transistors, so that the organic field-effect transistors with high performance and stability are obtained.