A high-frequency switching
transistor comprises a substrate having a substrate
dopant concentration and a barrier region bordering on the substrate, which has a first
conductivity type, wherein a barrier region
dopant concentration is higher than the substrate
dopant concentration. Further, the high-frequency switching
transistor comprises a source region embedded in the barrier region, which comprises a second
conductivity type different to the first
conductivity type, and has a source region dopant concentration, which is higher than the barrier region dopant concentration. Additionally, the high-frequency switching
transistor comprises a drain region embedded in the barrier region and disposed offset from the source region, which comprises the second conductivity type and has a drain region dopant concentration, which is higher than the barrier region dopant concentration. Further, the high-frequency switching transistor has a channel region, extending between the source region, wherein the channel region comprises a subregion of the barrier region. Further, the high-frequency switching transistor has an insulation region, which covers the channel region and which is disposed between the channel region and the gate
electrode. Such a high-frequency switching transistor allows switching of high-frequency signals with higher high-frequency
signal amplitudes as are switchable by conventional high-frequency switching transistors.