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33results about How to "Shorting of contact" patented technology

Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure

An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
Owner:CREE INC

Secured pin entry device

The invention is a keypad for securely entering personal identification numbers onto automated teller machines (ATM) or similar devices. A frame secures a flexible keypad to a printed circuit board. The front of the circuit includes a set of tamper detection contacts whose electrical circuit is completed by conductive material on the keypad surface. A moat of conductive material surrounds the tamper detection contact. Opening the circuit by removing the keypad or shorting the circuit to the moat initiates a tamper response.Attached to the reverse side of the printed circuit board are security sensitive electrical components. These security sensitive components include a static random access memory storing cryptographic information and a crypto processor. A plastic cover imprinted with a tamper detection grid forming multiple electrical circuits coupled to a tamper detection circuit covers these components. A border of conductive material on the printed circuit board also surrounds these components. Opening or shorting any of the circuits in the grid initiates a tamper response, and shorting any of the components to the border also initiates a tamper response.
Owner:TIDEL ENG LP

Ink-Jet Head and Connecting Structure

ActiveUS20060170738A1Suppress contactSuppressing a short circuitDecorative surface effectsWriting implementsEngineeringEnergy applicator
An ink-jet head has a flexible printed circuit and a head main body, and further has a reinforcement that is located between drive-signal terminals arranged adjacent to one another and a constant-potential-signal terminal. The drive-signal terminals and the constant-potential-signal terminal are formed on a terminal-formed face of an energy applier included in the head main body. The flexible printed circuit has an electrode-formed face on which a constant-potential-signal electrode to be bonded to the constant-potential-signal terminal with a metal bond and drive-signal electrodes to be bonded to the drive-signal terminals with a metal bond. The reinforcement is in contact with and interposed between the terminal-formed face and the electrode-formed face so that the terminal-formed face and the electrode-formed face are spaced apart from each other.
Owner:BROTHER KOGYO KK

Local interconnection method and structure for use in semiconductor device

A local interconnection wiring structure method for forming the same reduces the likelihood of a short between a local interconnection layer of gate electrodes and an active region by forming a common aperture so as to have a determined aperture between the local interconnection layer and the active region on an insulation film of a semiconductor substrate. Methods of forming the local interconnection wire can include forming a first etching mask pattern that has a size longer than a length between inner ends of adjacent gate electrodes formed on a semiconductor substrate and covered with an insulation film. The etching mask simultaneously has a length the same as or shorter than the length between outer ends of the gate electrodes. The insulation film exposed in the first etching mask pattern is subsequently etched so that the insulation film remains higher than a highest height of the gate electrodes, so as to form a recess pattern. The first etching mask pattern is then removed and a second etching mask pattern is formed so as to partially expose the insulation film provided within the recess pattern. The insulation film within the recess pattern is etched to form apertures for exposing a partial surface of the gate electrodes. The second etching mask pattern is then removed. The recess pattern and the apertures are then filled with conductive material to form a local interconnection layer for connecting between the gate electrodes.
Owner:SAMSUNG ELECTRONICS CO LTD

Taxane derivative containing pharmaceutical composition with improved therapeutic efficacy

InactiveUS20080300297A1Increase cancer tissue specificityGood curative effectBiocideAnimal repellantsChemistryTaxane derivative
The invention relates to a pharmaceutical combination comprising a mixture of (a) at least one taxane derivative and (b) at least one ω-3 poly-unsaturated acid or a derivative thereof wherein the molar ratio of (b) to (a) is not higher than 2. The invention further relates to a liquid pharmaceutical composition comprising (a) an effective amount of at least one taxane derivative, (b) an effective amount of at least one ω-3 poly-unsaturated fatty acid or a derivative thereof and (c) at least one pharmaceutically acceptable carrier and a process for the preparation of the same. The composition can be used for the therapy of cancers which are sensitive to taxane derivatives. The invention also relates to a kit comprising the individual components of the above mentioned composition placed in separate containers.
Owner:KYSILKA VLADIMIR

Method for insulating aluminum backboard of photovoltaic

A method for insulating an aluminum backboard of a photovoltaic module comprises the following steps: shearing the aluminum backboard such that the dimensions of the aluminum backboard are 4-5 mm smaller those of the glass; forming a square aperture at the position of the electrode lead of the aluminum backboard; insulating the square aperture by cushioning a small insulating material or wrapping the edges with an insulation film when arraying and laying the modules; laminating and trimming the superimposed module components; wrapping the trimmed laminated piece around the edge with the 0.5-1 mm insulation tape; finally, framing up the laminated piece by using a frame filled with silica gel, and installing the terminal box. The invention is convenient to operate and low in investment and has a wide application prospect.
Owner:HANWHA SOLARONE QIDONG

Interconnect manufacturing process

An interconnect process is provided. A substrate is provided. A plurality of gate structures is disposed on the substrate, and doped regions are disposed in the substrate and respectively located between two adjacent gate structure. A liner is conformally formed above the substrate. A dielectric layer is formed above the substrate. A contact opening is formed in the dielectric layer between two neighboring gate structures to expose the liner on the doped region and on a portion of the top surface and a portion of the sidewall of each of the gate structures. A polymer material is deposited on the liner on the portion of the top surface of each of the gate structures and on the doped region. The liner on the doped regions is removed. A conductive layer is filled in the contact opening, which is free of electrical connection to the gate structures.
Owner:NAN YA TECH
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