The preparation method for high-potential gradient ZnO piezoresistor material comprises: with high-energy ball grinding technology, adding rare earth oxides included Bi2O3, Sb2O3, Cr2O3, Co2O3, MnO2, and Y2O3; sintering at 800Deg, and obtaining the product. The advantages of this invention comprises: simple process technology, low sintering temperature, fit to traditional device, well properties of the product, 5.50~5.64g / cm3 density, 1845.66~2233.33V / mm voltage-sensitive potential gradient, 21.3~25.8 nonlinear index, and 1.55~10.2ª–A drain current (given 0.75V1mA).