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1404results about "Thermoelectric devices" patented technology

Radio frequency IC tag and method for manufacturing the same

InactiveUS20050275539A1Maximum antenna efficiencyReduces efficiency of antennaAntenna supports/mountingsSemiconductor/solid-state device detailsRadio frequencyElectric power
A radio frequency IC tag and a manufacturing method for the same includes an IC chip on which information is stored, and an antenna for transmitting the information that is stored on the IC chip. In the antenna, a power-feeding part on which the IC chip is mounted extends along a direction in which an electric current flows. Radiation parts are formed so that the width of the radiation parts becomes wider than that of the power-feeding part with respect to the longitudinal axis of the power-feeding part. The radiation parts extend from the power-feeding part, at both sides thereof, along the direction in which the electric current flows.
Owner:HITACHI LTD

Low-power band-gap reference and temperature sensor circuit

A combined low-voltage, low-power band-gap reference and temperature sensor circuit is provided for providing a band-gap reference parameter and for sensing the temperature of a chip, such as an eDRAM memory unit or CPU chip, using the band-gap reference parameter. The combined sensor circuit is insensitive to supply voltage and a variation in the chip temperature. The power consumption of both circuits, i.e., the band-gap reference and the temperature sensor circuits, encompassing the combined sensor circuit is less than one μW. The combined sensor circuit can be used to monitor local or global chip temperature. The result can be used to (1) regulate DRAM array refresh cycle time, e.g., the higher the temperature, the shorter the refresh cycle time, (2) to activate an on-chip or off-chip cooling or heating device to regulate the chip temperature, (3) to adjust internally generated voltage level, and (4) to adjust the CPU (or microprocessor) clock rate, i.e., frequency, so that the chip will not overheat. The combined band-gap reference and temperature sensor circuit of the present invention can be implemented within battery-operated devices having at least one memory unit. The low-power circuits of the sensor circuit extend battery lifetime and data retention time of the cells of the at least one memory unit.
Owner:GLOBALFOUNDRIES INC

Method and a measuring circuit for determining temperature from a PN junction temperature sensor, and a temperature sensing circuit comprising the measuring circuit and a PN junction

A switched current temperature sensing circuit (1) comprises a measuring transistor (Q1) which is located remotely of a measuring circuit (5) which applies three excitation currents (I1,I2,I3) of different values to the measuring transistor (Q1) in a predetermined current sequence along lines (10,11). Resulting base/emitter voltages from the measuring transistor (Q1) are applied to the measuring circuit (5) along the same two lines (10,11) as the excitation currents are applied to the measuring transistor (Q1). Voltage differences ΔVbe of successive base/emitter voltages resulting from the excitation currents are integrated in an integrating circuit (36) of the measuring circuit (5) to provide an output voltage indicative of the temperature of the measuring transistor (Q1). By virtue of the fact that the measuring transistor (Q1) is excited by excitation currents of three different values, the effect of current path series resistance in the lines (10,11) on the output voltage indicative of temperature is eliminated. The predetermined current sequence in which the excitation currents are applied to the measuring transistor (Q1) is selected to minimize the voltages in the integrating circuit (36) during integration of the voltage differences ΔVbe.
Owner:ANALOG DEVICES INC

Decoupled switched current temperature circuit with compounded DELTA V be

A decoupled switched current temperature circuit with compounded DELTA Vbe includes an amplifier having an inverting input with corresponding non-inverting output and a non-inverting input with a corresponding inverting output; a PN junction connected to the non-inverting input through a first input capacitor and a voltage reference circuit is connected to the inverting input through a second input capacitor; a current supply includes a low current source and a high current source; a switching device applies the high current source to the PN junction and applies the low current source to the PN junction for providing the DELTA Vbe of the PN junction to the first capacitor; a first feedback capacitor is interconnected between the inverting output and the non-inverting input and a second feedback capacitor is interconnected between the non-inverting output and inverting input of the amplifier to define the gain on each of the inputs to produce a differential voltage across the outputs representative of the temperature of the PN junction; first and second reset switching devices discharge the first and second feedback capacitors, respectively, and a multi-phase switched device alternately interchanges the connection of the first and second input capacitors with the amplifier inputs for compounding the single DELTA Vbe .
Owner:ANALOG DEVICES INC

Optically transitioning thermal detector structures

A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature.
Owner:DRS NETWORK & IMAGING SYST

Temperature sensing circuit for use in semiconductor integrated circuit

A temperature sensing circuit has numerous trip points in conformity with a temperature change without adding decrease resistance branches, so as to obtain a fine control based on the temperature change. Accordingly, when employed in a semiconductor memory device, the temperature sensing circuit substantially reduces the consumption of refresh electrical power in a stand-by state without decreasing the reliability of the semiconductor memory device.
Owner:SAMSUNG ELECTRONICS CO LTD
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