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Manufacturing method of low-voltage and high-energy zinc oxide resistor disc

A technology of zinc oxide resistor sheet and manufacturing method, applied in resistor manufacturing, resistors, circuits, etc., can solve the problems of low residual voltage ratio, inability to meet low voltage and high current, etc.

Inactive Publication Date: 2013-11-20
扬州发运电气有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, neither of these two systems can meet the requirements of low pressure, high flow, and low residual pressure ratio

Method used

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  • Manufacturing method of low-voltage and high-energy zinc oxide resistor disc

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Embodiment 1

[0020] A method for manufacturing a low-voltage high-energy zinc oxide resistance sheet, comprising the following process steps:

[0021] (1) Ratio of additives: In terms of molar percentage, in addition to the main material zinc oxide, additives include: 0.2% antimony trioxide, 0.8% titanium dioxide, 0.5% bismuth trioxide, 0.8% cobalt trioxide, carbonic acid Manganese 0.6%, silver nitrate 0.001%, tin dioxide 0.3%, boric acid 0.001%;

[0022] (2) Stirring and grinding of additives: add the additives with a good ratio and water equal to the weight of the additives into the ball mill for stirring and grinding, and the mixing and ball milling time is 3 hours;

[0023] (3) Mixing, dispersing, grinding and spray granulation of additives and main ingredients: Add zinc oxide, aluminum nitrate and binder PVA-1799 into the ball mill, disperse and grind for 120 minutes, and the weight ratio of aluminum nitrate to additives is 1: 300, the weight ratio of binder to zinc oxide is 1:100; t...

Embodiment 2

[0027] A method for manufacturing a low-voltage high-energy zinc oxide resistance sheet, comprising the following process steps:

[0028] (1) Ratio of additives: In terms of molar percentage, in addition to zinc oxide as the main ingredient, additives include: 0.6% antimony trioxide, 1.5% titanium dioxide, 1.3% bismuth trioxide, 2.1% cobalt trioxide, carbonic acid Manganese 1.3%, silver nitrate 0.003%, tin dioxide 0.6%, boric acid 0.006%;

[0029] (2) Stirring and grinding of additives: Add the additives with a good ratio and water equal to the weight of the additives into the ball mill for stirring and grinding. The mixing and ball milling time is 5 hours;

[0030] (3) Mixing, dispersion, grinding and spray granulation of additives and main ingredients: Add zinc oxide, aluminum nitrate and binder PVA-1799 into the ball mill, disperse and grind for 120 minutes, and the weight ratio of aluminum nitrate to additives is 1: 300, the weight ratio of binder to zinc oxide is 1:100; ...

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Abstract

The invention provides a manufacturing method of a low-voltage and high-energy zinc oxide resistor disc. The manufacturing method comprises the following steps of: adding the following materials except for the main material zinc oxide in mole percentage: 0.2-0.6% of antimony trixoide, 0.8-1.5% of titanium dioxide, 0.5-1.3% of bismuth trioxide, 0.8-2.1% of cobalt sesquioxide, 0.6-1.3% of manganese carbonate, 0.001-0.003% of silver nitrate, 0.3-0.6% of stannic oxide and 0.001-0.006% of boric acid; and then, stirring and grinding the added materials, mixing the added materials with the main material, dispersing and grinding the mixture, carrying out spray granulation, treating water in the mixture, forming a blank, removing a binding agent and sintering to prepare a finished product, removing the binding agent in the pressed blank at the temperature of 420 DEG C, sintering at the temperature of 1050-1150 DEG C, and preserving the heat for 3-6h, wherein the reaction time for removing the binding agent is 20h. The resistor disc prepared by using the manufacturing method provided by the invention is low in potential gradient and high in flow capacity.

Description

technical field [0001] The invention relates to a method for manufacturing a resistance sheet, in particular to a method for manufacturing a low-voltage high-energy zinc oxide resistance sheet. Background technique [0002] From the perspective of the formula system, the current zinc oxide resistors are mainly based on the ZnO-Bi2O3-Sb2O3 system. In the ZnO-Bi2O3-Sb2O3 system, Sb2O3 forms a spinel phase Zn-7Sb-2O-(12) in the zinc oxide matrix during the sintering process, which is pinned between the zinc oxide crystals and inhibits the zinc oxide crystals. Therefore, the appropriate amount of Sb2O3 doping is beneficial to the sintering and densification of ZnO composite ceramics. It is characterized by small grain size (6-18μm), high potential gradient (200-300V / mm) and weak flow capacity. ZnO-Bi2O3-TiO2 series resistors are characterized by large average grain size (30-60μm), low gradient (30-70V / mm), high flow energy, but high potential gradient. In the prior art, neith...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01C17/30
Inventor 李发运
Owner 扬州发运电气有限公司
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