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Double-sided POLO (POLy-Si on passivating interfacial Oxides) battery and preparation method thereof

A double-sided, battery technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problem of increasing the carrier transport distance and achieve the effects of reducing contact negative charge value, increasing response, and small current loss

Inactive Publication Date: 2017-11-10
EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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AI Technical Summary

Problems solved by technology

At present, the passivation effect of PERC is better, but PERC also has two disadvantages. The first is that PERC still has some contact between metal and semiconductor, and the other is that the back surface of PERC is point contact, which increases the distance of carrier transport.

Method used

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  • Double-sided POLO (POLy-Si on passivating interfacial Oxides) battery and preparation method thereof

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Embodiment Construction

[0020] The present invention is described in further detail now in conjunction with accompanying drawing. These drawings are all simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner, so they only show the configurations related to the present invention.

[0021] Such as figure 1 As shown, it is the best embodiment of the present invention, a double-sided POLO battery, including a silicon substrate 1, and the two sides of the silicon substrate 1 are sequentially provided with a SiOx tunneling oxide layer 2, a polysilicon layer 3 and ITO conductive film layer 4.

[0022] A method for preparing a double-sided POLO battery, comprising sequentially double-sided cleaning of silicon wafers, full passivation, ion implantation, high-strength conductive film and screen printing, and silicon oxide plus polysilicon is used for passivation in the full passivation process A fully passivated layer is formed.

[0023] Speci...

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Abstract

The invention relates to the technical field of solar cell preparation, and especially relates to a double-sided POLO (POLy-Si on passivating interfacial Oxides) battery and a preparation method thereof. Silicon oxide and a polysilicon layer are used to perform double-sided passivation, wherein the first function is that the surface defects of a silicon wafer surface are not only passivated and the response of weak light is increased, but also the contact between metals on the back and a semiconductor is passivated, and a contact negative charge value is reduced; and the second function is that there is no point contact due to complete passivation, a base region has no transverse transmission of minority carries or majority carries; and the third function is that the polycrystalline silicon is an indirect band gap, and the current loss is small.

Description

technical field [0001] The invention relates to the technical field of solar cell preparation, in particular to a double-sided POLO cell and a preparation method thereof. Background technique [0002] At present, as an emerging high-efficiency battery technology, the back passivation battery can effectively passivate the back of the battery and reduce the emissivity of the back, thereby effectively absorbing the long-wavelength light and making the battery efficiency a big leap. ; And due to the intervention of the passivation layer, the warpage of the battery sheet has also been improved to a certain extent. [0003] The metal and semiconductor contact negative charge value in a conventional battery is about 4000 FA / cm2, and the value is between 100 and 300 after passivation. At present, the passivation effect of PERC is better, but PERC also has two disadvantages. The first is that PERC still has some contact between metal and semiconductor, and the other is that the back...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02167H01L31/1876Y02E10/50Y02P70/50
Inventor 刘阳孙铁囤姚伟忠
Owner EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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