Single-sided POLO cell and preparation method thereof

A battery and single-sided technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problem of increasing the carrier transport distance and achieve the effects of reducing contact negative charge value, increasing response, and small current loss

Inactive Publication Date: 2017-10-20
EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

At present, the passivation effect of PERC is better, but PERC also has two disadvantages. The first is that PERC still has some contact between metal and semiconductor, and the other is that the back surface of PERC is point contact, which increases the distance of carrier transport.

Method used

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  • Single-sided POLO cell and preparation method thereof

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Embodiment Construction

[0023] The present invention is described in further detail now in conjunction with accompanying drawing. These drawings are all simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner, so they only show the configurations related to the present invention.

[0024] Such as figure 1 As shown, it is the best embodiment of the present invention, a single-sided POLO battery, including a silicon wafer substrate 1, and the front side of the silicon wafer substrate 1 is sequentially formed with a passivation layer and an anti-reflection layer from the inside to the outside by a PERC solar cell manufacturing method. Layers, the back of the silicon substrate 1 is provided with a SiOx tunnel oxide layer 2, a polysilicon layer 3 and an ITO conductive thin film layer 4 sequentially from the inside to the outside.

[0025] A method for preparing a single-sided POLO battery, the specific steps comprising:

[0026] Clean the w...

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Abstract

The invention relates to the field of solar cell preparation technology, and more particularly to a single-sided POLO cell and a preparation method thereof. A silicon oxide plus polysilicon layer is used for backside passivation. The functions include firstly, surface defects on the back side are passivated, the response of weak light is enhanced, the contact between the metal and semiconductor on the back side is also passivated, and the contact negative charge value is reduced; secondly, no transverse transmission of minority or majority carriers is present in a substrate region due to the full passivation and no point contact; and thirdly, the polysilicon is an indirect bandgap so the current loss is small.

Description

technical field [0001] The invention relates to the technical field of solar cell preparation, in particular to a single-sided POLO cell and a preparation method thereof. Background technique [0002] At present, as an emerging high-efficiency battery technology, the back passivation battery can effectively passivate the back of the battery and reduce the emissivity of the back, thereby effectively absorbing the long-wavelength light and making the battery efficiency a big leap. ; And due to the intervention of the passivation layer, the warpage of the battery sheet has also been improved to a certain extent. [0003] The metal and semiconductor contact negative charge value in a conventional battery is about 4000 FA / cm2, and the value is between 100 and 300 after passivation. At present, the passivation effect of PERC is better, but PERC also has two disadvantages. The first is that PERC still has some contact between metal and semiconductor, and the other is that the back...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168Y02E10/50Y02P70/50
Inventor 刘阳孙铁囤姚伟忠
Owner EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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