PCT No. PCT / JP97 / 04232 Sec. 371 Date Jul. 17, 1998 Sec. 102(e) Date Jul. 17, 1998 PCT Filed Nov. 20, 1997 PCT Pub. No. WO98 / 22636 PCT Pub. Date May 28, 1998A
sputtering target consisting essentially of Mn and at least one kind of R element selected from a group of Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The
sputtering target, at least as a part of target texture, comprises one member selected from a group of an
alloy phase and a compound phase formed between the R element and Mn. In addition,
oxygen content in the target is 1 weight % or less (including 0). With such a
sputtering target, an anti-ferromagnetic material film consisting of RMn
alloy excellent in
corrosion resistivity and thermal performance can be stabilized in its film composition and film quality. By employing the anti-ferromagnetic material film, when an exchange
coupling film is formed by stacking the anti-ferromagnetic material film and the ferromagnetic material film, sufficient exchange
coupling force is obtained stably. Such an exchange
coupling film can be used in a
magneto-resistance effect element and the like.