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Bonding filamentary silver and preparation method thereof

A silver wire and bonding technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of easy oxidation hardness, affecting device reliability and efficiency, and only limited to the batch application of separated devices

Active Publication Date: 2010-01-13
烟台一诺电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, the price of gold has continued to rise, which has prompted the development of gold wire substitutes, including copper wire, gold-silver alloy wire, etc. Among them, copper wire has been relatively mature and has begun to be used, but due to its easy oxidation and high hardness, it is seriously It affects the reliability and efficiency of the device. Therefore, although it has been discussed since the 1980s, and the manufacturing and use technologies have also been greatly improved, it is still limited to the batch application of low-end products such as separation devices.

Method used

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  • Bonding filamentary silver and preparation method thereof
  • Bonding filamentary silver and preparation method thereof
  • Bonding filamentary silver and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Raw material ratio: Cu 0.30%, Ce 0.50%, Pd 0.05%, with Ag to 100%.

[0029] Preparation method: a. Silver raw material: select high-purity silver with more than 99.999%, or select a purification process, and remove impurities from the initial 99.95%-99.99% purity of high-purity silver to achieve high-purity silver with more than 99.999%;

[0030] b. Casting: According to different models and customer requirements, 99.999% high-purity silver is added to various alloys, and after pre-alloying, master alloy and continuous casting process, it is cast into round bars to meet the next process requirements;

[0031] c. Wire drawing: the silver rod is drawn into wires of different diameters through a wire drawing machine;

[0032] d. Annealing: According to the different requirements of customers, set different annealing parameters to eliminate stress and obtain mechanical properties that meet the requirements;

[0033] e. Mechanical performance testing: check whether the prod...

Embodiment 2

[0038] Raw material ratio: Cu 0.80%, Ce 0.20%, Pd 0.09%, with Ag to 100%.

[0039] Preparation method: same as Example 1.

Embodiment 3

[0041] Raw material ratio: Cu 0.60%, Ce 0.40%, Pd 0.07%, with Ag to 100%.

[0042] Preparation method: same as Example 1.

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PUM

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Abstract

The invention relates to a bonding filamentary silver and a preparation method thereof. The bonding filamentary silver comprises the components of 0.30-0.80% of Cu, 0.20-0.50% of Ce, 0.05-0.09% of Pd and the rest of Ag. On the basis of high purity silver material, the invention adopts multielement doped alloy which is added with other components, so as to reduce the formation of metallic compound, prevent the generation of interfacial oxide and the crack, reduce the degradation of combination performance, and ensure the stability of the combination performance to be the same as that of filamentary gold, thus improving the combination performance, the electrical conductivity and the inoxidizability; by controlling the conditions of fusion casting, processing and hot treatment, the invention further optimizes the structure and guarantees the proper mechanical capacity, so as to meet different needs, be applied into advanced packaging such as an integrated circuit and the like in deed, and partly or completely replace the filamentary gold.

Description

(1) The technical field [0001] The present invention relates to a bonding silver wire and a preparation method thereof. (2) Background technology [0002] Bonding Wires, as a product family, is one of the key materials of semiconductor packaging. Its function is to realize the electrical connection between the semiconductor chip and the pins, and it plays the role of importing and exporting current between the chip and the outside world. At present, the bonding wire is mainly composed of gold wire, aluminum wire and copper wire. The aluminum wire is only limited to low-end toy circuits, and the gold wire occupies the middle and high products, accounting for more than 80% of the total. In recent years, the price of gold has continued to rise, prompting the development of gold wire substitutes, including copper wire, gold-silver alloy wire, etc. Among them, copper wire is relatively mature and has begun to be used, but due to its easy oxidation and high hardness, serious probl...

Claims

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Application Information

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IPC IPC(8): H01L23/49H01L21/48C22C5/08C22C5/06C22C1/02B22D11/00C22F1/14C21D1/26
CPCH01L2224/45124H01L24/45H01L2924/01046H01L2924/01047H01L2924/01079H01L2224/45139H01L2924/01005H01L2924/01327H01L2924/01006H01L2924/01029H01L2224/45144H01L2924/01058H01L2924/01013H01L2924/014H01L2224/45147H01L24/43H01L2224/43H01L2224/43848H01L2224/45H01L2224/45015H01L2924/00011H01L2924/00014H01L2924/14H01L2924/00015H01L2924/00H01L2924/013H01L2224/48H01L2924/01049H01L2924/01203H01L2924/01204H01L2924/00012H01L2924/207
Inventor 林良
Owner 烟台一诺电子材料有限公司
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