Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate

Abstract

A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] The present invention is a continuation-in-part of U.S. application Ser. No. 10 / 712,545, filed on Nov. 13, 2003 and titled, “LONG DELAY AND HIGH TIS PULSE STRETCHER” which is a continuation-in-part of U.S. application Ser. No. 10 / 141,216, filed on May 7, 2002, now U.S. Pat. No. 6,693,939, and titled, “LASER LITHOGRAPHY LIGHT SOURCE WITH BEAM DELIVERY,” the disclosures of each of which are hereby incorporated by reference herein. [0002] The present invention is also a continuation-in-part of U.S. application Ser. No. 10 / 781,251, titled “VERY HIGH ENERGY, HIGH STABILITY GAS DISCHARGE LASER SURFACE TREATMENT SYSTEM,” filed on Feb. 18, 2004. [0003] The present invention is also a continuation-in-part of U.S. application Ser. No. 10 / 425,361, filed on Apr. 29, 2003 and titled, “LITHOGRAPHY LASER WITH BEAM DELIVERY AND BEAM POINTING CONTROL.”FIELD OF THE INVENTION [0004] The present invention relates to systems and methods for positioning a fi...

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Benefits of technology

[0015] In still another aspect of an embodiment of the present invention, a system and method are provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped beam. This syst

Problems solved by technology

High energy density levels may cause the film to flow resulting in undesirable “thin spots”, a non-flat surface profile and poor grain quality.

This uneven distribution of film material is often termed “agglomeration” and can render the crystallized film unsuitable for certain applications.

On the other hand, low energy density levels may lead to incomplete melting and result in poor grain quality.

Thus, surface variations of the silicon film, the glass substrate and the vacuum chuck surface which holds the glass substrate, even variations as small as a few microns, if unaccounted for, can lead to unwanted variations in energy density from one film location to another.

It is to be appreciated that these surface variations can be especially problematic for focused thin beam having a DOF of only about 20 microns.

In addition to surface variations, unwanted movements of the film relative to the shaped line beam can also lead to variations in energy density.

Also, an improper alignment of the stage relative to the shaped line beam and / or an improper alignment of the stage relative to the scan plane can result in an unwanted energy density variation.

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