49results about How to "Reliability can be promoted" patented technology

Integrated memory circuits, key components in thousands of electronic and computer products, have recently been made using ferroelectric memory transistors, which offer faster write cycles and lower power requirements than over conventional floating-gate transistors. One problem that hinders the continued down-scaling of conventional ferroelectric memory transistors is the vulnerability of their gate insulations to failure at thinner dimensions. Accordingly, the inventors devised unique ferroelectric gate structures, one of which includes a high-integrity silicon-oxide insulative layer, a doped titanium-oxide layer, a weak-ferroelectric layer, and a control gate. The doped titanium-oxide layer replaces a metal layer in the conventional ferroelectric gate structure, and the weak-ferroelectric layer replaces a conventional ferroelectric layer. These replacements reduce the permittivity mismatch found in conventional gate structures, and thus reduce stress on gate insulation layers, thereby improving reliability of ferroelectric memory transistors, particularly those with thinner gate insulation.

To provide an optical connector promoting reliability by reducing insertion loss of an optical fiber and downsized, there is provided an optical connector plug having a ferrule including a cylindrical member for the ferrule for holding an optical fiber and a flange member provided at a rear end portion of the cylindrical member for the ferrule, an urge spring provided on a side of a rear end portion of the flange member of the ferrule, and a plug housing for holding the ferrule and the urge spring directly at inside thereof and directly engaged with an optical connector adapter inserted with a front end portion of the ferrule to carry out optical connection, in which the plug housing is formed with a slit capable of inserting the optical fiber in a radius direction thereof at a portion of an outer periphery thereof over an axial direction.

The present invention provides a self-compensating gate driving circuit, comprising: a plurality of GOA units which are cascade connected, and a Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area, and the Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area, and the Nth GOA unit comprises a pull-up controlling part, a pull-up part, a transmission part, a first pull-down part, a bootstrap capacitor part and a pull-down holding part; the pull-up part, the first pull-down part, the bootstrap capacitor part and the pull-down holding circuit are respectively coupled to a Nth gate signal point Q(N) and the Nth horizontal scanning line G(n), and the pull-up controlling part and the transmission part are respectively coupled to the Nth gate signal point Q(N), and the pull-down holding part is inputted with a DC low voltage VSS; the pull-down holding part comprises a first pull-down holding part and a second pull-down holding part to alternately work. The present invention is designed to have the pull-down holding part with self-compensating function to promote the reliability of the long term operation for the gate driving circuit. The influence of the threshold voltage drift to the operation of the gate driving circuit is diminished.

The present invention provides a self-compensating gate driving circuit, comprising: a plurality of GOA units which are cascade connected, and a Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area, and the Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area, and the Nth GOA unit comprises a pull-up controlling part, a pull-up part, a transmission part, a first pull-down part, a bootstrap capacitor part and a pull-down holding part; the pull-up part, the first pull-down part, the bootstrap capacitor part and the pull-down holding circuit are respectively coupled to a Nth gate signal point Q(N) and the Nth horizontal scanning line G(n), and the pull-up controlling part and the transmission part are respectively coupled to the Nth gate signal point Q(N), and the pull-down holding part is inputted with a first DC low voltage VSS1. The present invention is designed to have the pull-down holding part with self-compensating function to promote the reliability of the long term operation for the gate driving circuit. The influence of the threshold voltage drift to the operation of the gate driving circuit is diminished; the pull-down holding part can be designed to be controlled by a set of DC signal source. The design space of the circuit patterns can be saved and the overall power consumption of the circuit can be decreased.

An electrical connector includes an insulating body, a terminal set, a wire, and a shielding housing having an upper shell body and a lower shell body. A support part of the first buckling sheet which is penetrated through a first buckle hole of the lower shell body is rivetedly pressed on an outer peripheral edge of the first buckle hole of the lower shell body. An upper side and a lower side of the wire are pressed by a top plate of the upper shell body and the bottom plate of the lower shell body so that the upper and lower shell bodies of the shielding housing can be integrally formed, thereby promoting the bulk intensity of the produced electrical connector, preventing the internal mechanism of the electrical connector from damage due to the oscillation of the wire, and promoting the reliability of the produced electrical connector.

The present invention provides a self-compensating gate driving circuit which comprises a plurality of GOA units which are cascade-connected, and a Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area. The Nth GOA unit comprises a pull-up controlling part, a pull-up part, a transmission part, a first pull-down part, a bootstrap capacitor part and a pull-down holding part. The pull-up part, the first pull-down part, the bootstrap capacitor part and the pull-down holding part are respectively coupled to a Nth gate signal point Q(N) and the Nth horizontal scanning line G(n), and the pull-up controlling part and the transmission part are respectively coupled to the Nth gate signal point Q(N), and the pull-down holding part is inputted with a DC low voltage VSS.

A structure of an antenna connector is provided. The antenna connector comprises a metal plate and an isolation member. The metal plate comprises at least a terminal, two wing boards and a clamp, wherein the terminal is located between the two wing boards and the clamp is located below the terminal. The isolation member comprises a sleeve located at a position corresponding to the terminal of the metal plate and two fixing portions located at positions corresponding to the two wing boards. The two fixing portions comprise a plurality of slots for fixing the wind boards. To assemble the isolation member to the metal plate, the isolation member is placed over the metal plate such that the terminal is received within the sleeve of the isolation member and the two wing boards are fixed into the slots of the two fixing portions respectively.

A leak check system executes a leak check processing. In the leak check processing, the system closes a canister valve and a purge valve to close the fuel vapor purge system. Then, the system detects and monitors a pressure in the fuel vapor purge system. During the leak check processing, the system detects a rapid change of the pressure that is caused by a deformation of a wall of a fuel tank. The system cancels or suspends the processing to avoid erroneous detection of the leak. If the leak check is canceled, the system opens the canister valve to open the fuel vapor purge system.

A non-volatile memory having memory cells is provided. The memory cell includes a source region and a drain region, a select gate, a dummy select gate, a floating gate, an erase gate, and a control gate. The select gate is disposed on the substrate between the source region and the drain region. The floating gate is disposed on the substrate between the select gate and the source region, and a top portion of the floating gate has corners in symmetry. The height of the floating gate is lower than the height of the select gate. The erase gate is provided on the source region and covers the corner at the side of the source. The control gate is disposed on the erase gate and the floating gate.

Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

A method for producing interconnection lines including etching a layer of porous dielectric material forming a trench and filling the trench is provided. The etching is carried out in a plasma so as to grow, all along the etching, a protective layer on flanks of the layer of porous dielectric material. The plasma is formed from a gas formed from a first component and a second component, or a gas formed from a first component, a second component and a third component. The first component is a hydrocarbon of the CXHY type, where X is the proportion of carbon in the gas and Y the proportion of hydrogen in the gas; the second component is taken from nitrogen or dioxygen or a mixture of nitrogen and dioxygen; the third component is taken from argon or helium; and the protective layer is based on hydrocarbon.

With an object of executing excellent finishing processing when information is recorded to a rewritable type record medium or a write once type record medium, the finishing processing is switched by whether a kind of a medium for recording information is the rewritable type record medium or the write once type record medium and a method of executing the finishing processing is switched based on a state of supplying power.