72results about How to "Reduce metal pollution" patented technology

This invention relates to thermal spray composite coatings on a metal or non-metal substrate. The thermal spray composite coatings comprise (i) a ceramic composite coating undercoat layer having at least two ceramic material phases randomly and uniformly dispersed and / or spatially oriented throughout the ceramic composite coating, and (ii) a ceramic coating topcoat layer applied to the undercoat layer. At least a first ceramic material phase is present in the undercoat layer in an amount sufficient to provide corrosion resistance to the ceramic composite coating, and at least a second ceramic material phase is present in the undercoat layer in an amount sufficient to provide plasma erosion resistance to the ceramic composite coating. This invention also relates to methods of protecting metal and non-metal substrates by applying the thermal spray coatings. The composite coatings provide erosion and corrosion resistance at processing temperatures higher than conventional processing temperatures used in the semiconductor etch industry, e.g., greater than 100° C. The coatings are useful, for example, in the protection of semiconductor manufacturing equipment, e.g., integrated circuit, light emitting diode, display, and photovoltaic, internal chamber components, and electrostatic chuck manufacture.

This invention relates to substrate supports, e.g., coated electrostatic chucks, having a dielectric multilayer formed thereon; dielectric multilayers that provide erosive and corrosive barrier protection in harsh environments such as plasma treating vessels used in semiconductor device manufacture; process chambers, e.g., deposition chambers, for processing substrates; methods for protecting substrate supports; and methods for producing substrate supports and electronic devices. The dielectric multilayer comprises (a) an undercoat dielectric layer comprising a metal oxide or metal nitride formed on a surface; and (b) a topcoat dielectric layer comprising a metal oxide formed on the undercoat dielectric layer. The topcoat dielectric layer has an aluminum oxide content of less than about 1 weight percent. The topcoat dielectric layer has a corrosion resistance and / or plasma erosion resistance greater than the corrosion resistance and / or plasma erosion resistance of the undercoat dielectric layer. The undercoat dielectric layer can have a resistivity greater than the resistivity of the topcoat dielectric layer. The topcoat dielectric layer can have a dielectric constant greater than the dielectric constant of the undercoat dielectric layer. The undercoat dielectric layer can have a porosity greater than the porosity of the topcoat dielectric layer. The invention is useful, for example, in the manufacture and protection of electrostatic chucks used in semiconductor device manufacture.

The present invention provides a phase transition method of an amorphous material, comprising steps of: depositing the amorphous material on a dielectric substrate; forming a cap layer on the amorphous material; depositing a metal on the cap layer; and crystallizing the amorphous material. According to the present invention, the surface of the amorphous material is protected by the cap layer, so that clean surface can be obtained and the roughness of the surface can be remarkably reduced during thermal process and sample handling. In addition, the cap layer is disposed between the amorphous material and the metal to diffuse the metal, so that the metal contamination due to the direct contact of the metal and the amorphous material in the conventional method can be remarkably reduced.

Disclosed is a technique for reducing the leak current by reducing contamination of metal composing a polymetal gate of a MISFET. Of a polycrystalline silicon film, a WN film, a W film, and a cap insulating film formed on a gate insulating film on a p-type well (semiconductor substrate), the cap insulating film, the W film, and the WN film are etched and the over-etching of the polycrystalline silicon film below them is performed. Then, a sidewall film is formed on sidewalls of these films. Thereafter, after etching the polycrystalline silicon film with using the sidewall film as a mask, a thermal treatment is performed in an oxidation atmosphere, by which a light oxide film is formed on the sidewall of the polycrystalline silicon film. As a result, the contamination on the gate insulating film due to the W and the W oxide can be reduced, and also, the diffusion of these materials into the semiconductor substrate (p-type well) and the resultant increase of the leak current can be prevented.