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Polishing composite for silicon wafer polishing

A technique for polishing compositions and silicon wafers, which is applied in the fields of polishing compositions containing abrasives, electrical components, semiconductor/solid-state devices, etc. It can solve the problems of low removal rate, many metal residues, and many surface defects, and achieve High-quality polishing, fast polishing rate, and less surface defects

Inactive Publication Date: 2009-06-10
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The invention overcomes the problems of many surface defects, low removal rate, many metal residues and difficult cleaning which are easily caused by the traditional silicon wafer polishing liquid in the polishing process

Method used

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  • Polishing composite for silicon wafer polishing
  • Polishing composite for silicon wafer polishing
  • Polishing composite for silicon wafer polishing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Disperse 400g of colloidal silicon dioxide with a silicon dioxide content of 30% in 5464.4g of deionized water with a stirrer, add 120g of an aqueous solution containing 2% of dihydroxypropyl cellulose ether as a polishing interface control agent, and place in the stirrer Make the polishing interface control agent and colloidal silicon dioxide fully mixed; then add surfactant DC-193 (dimethylpolysiloxane polyether copolymer) 2.4g, chelating agent EDTA (ethylenediaminetetraacetic acid) 1.2g Add 12 g of basic compound TETA (triethylenetetramine), and finally filter the polishing composition with a filter element with a pore size of 0.5 μm, as shown in Table 1.

Embodiment 2～3

[0049] The preparation process was the same as in Example 1, and the amounts of the 2% aqueous solution of the polishing interface control agent dihydroxypropyl cellulose ether added were 180 g and 240 g, as shown in Table 1.

Embodiment 4

[0051] The preparation process is the same as in Example 1, dispersing 400 g of colloidal silicon dioxide with a silicon dioxide content of 30% in 5270.6 g of deionized water with a stirrer, and adding 2% dihydroxypropyl cellulose ether containing polishing interface control agent 300g of the aqueous solution, the polishing interface control agent and the colloidal silicon dioxide are fully mixed in the stirrer; then add the surfactant AEO-9 (polyoxyethylene (9) lauryl ether) 3.6g, the chelating agent TTHP (triethyl ether) successively Tetraamine hexaethylene phosphonic acid) 1.8g; Add two basic compounds DETA (triethylenetetramine) and PIZ (piperazine anhydrous), respectively 12g and 6g, and finally use a filter element with a pore size of 0.5 μm to The polishing compositions were filtered as shown in Table 1.

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Abstract

The invention discloses a silicon wafer polishing composition in the field of chemical mechanical polishing (CMP). The polishing composition comprises silica, a polishing interface control agent, a surfactant, a chelating agent, an alkaline compound and water, wherein the particle diameter of the silica in the polishing composition is between 1 and 200 nm; the content of the silica is between 0.05 and 50 weight percent; the polishing interface control agent is polyhydroxy cellulose ether; the content of the polishing interface control agent is between 0.001 and 10 weight percent; the content of the surfactant is between 0.001 and 1 weight percent; the content of the chelating agent is between 0.001 and 1 weight percent; the content of the alkaline compound is between 0.001 and 10 weight percent; the balance being water; and the PH value is between 8.5 and 12. The polishing interface control agent can control a polishing interface between abrasive particles and a polishing object in the chemical mechanical polishing process in order that the surface of the polished silicon wafer is more perfect. The polishing composition is in particular suitable for polishing the silicon wafer and has the advantages of rapid polishing speed, little surface defect and high planeness; and the polished silicon wafer has few metal ion contaminants and is easy to clean.

Description

technical field [0001] The invention relates to a polishing composition for silicon wafer polishing in the field of chemical mechanical polishing (CMP). Background technique [0002] Semiconductor materials, mainly silicon materials, are the most important basic functional materials in the electronic information industry, and occupy a very important position in the national economy and military industry. More than 95% of the world's semiconductor devices are made of silicon materials, and 85% of integrated circuits are also made of silicon materials. At present, IC technology has entered the era of nanoelectronics with a line width of less than 0.1 μm, and the requirements for the surface processing quality of silicon single crystal polished wafers are getting higher and higher. Traditional polishing fluids can no longer meet the requirements of silicon single wafer polishing. In order to ensure higher machining accuracy such as warpage, local surface flatness, and surface ...

Claims

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Application Information

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IPC IPC(8): C09G1/02H01L21/306
Inventor 潘国顺顾忠华高峰雒建斌路新春刘岩
Owner TSINGHUA UNIV
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