622 results about "Colloidal Silicon Dioxide" patented technology

A microcrystalline cellulose-based excipient having improved compressibility, whether utilized in direct compression, dry granulation or wet granulation formulations, is disclosed. The excipient is an agglomerate of microcrystalline cellulose particles and from about 0.1% to about 20% silicon dioxide particles, by weight of the microcrystalline cellulose, wherein the microcrystalline cellulose and silicon dioxide are in intimate association with each other. The silicon dioxide utilized in the novel excipient has a particle size from about 1 nanometer to about 100 microns. Most preferably, the silicon dioxide is a grade of colloidal silicon dioxide.

A microcrystalline cellulose-based excipient having improved compressibility, whether utilized in direct compression, dry granulation or wet granulation formulations, is disclosed. The excipient is an agglomerate of microcrystalline cellulose particles and from about 0.1% to about 20% silicon dioxide particles, by weight of the microcrystalline cellulose, wherein the microcrystalline cellulose and silicon dioxide are in intimate association with each other. The silicon dioxide utilized in the novel excipient has a particle size from about 1 nanometer to about 100 microns. Most preferably, the silicon dioxide is a grade of colloidal silicon dioxide.

A polishing liquid for a chemical mechanical polishing of a semiconductor device includes (a) a carboxylic acid compound having one or more carboxy groups, (b) colloidal silica particles having a ζ potential of −10 mV to −35 mV when used in the polishing liquid, (c) a benzotriazole derivative, (d) an anionic surfactant, and (e) an oxidizing agent, and the polishing liquid has a pH of from 5.0 to 8.0.

A microcrystalline cellulose-based excipient having improved compressibility, whether utilized in direct compression, dry granulation or wet granulation formulations, is disclosed. The excipient is an agglomerate of microcrystalline cellulose particles and from about 0.1% to about 20% silicon dioxide particles, by weight of microcrystalline cellulose, wherein the microcrystalline cellulose and silicon dioxide are in intimate association with each other. The silicon dioxide utilized in the novel excipient has a particle size from 1 nanometer to about 100 microns. Most preferably, the silicon dioxide is a grade of colloidal silicon dioxide. An extra low moisture excipient is provided which exhibits improved compressibility as compared to conventional microcrystalline cellulose, while providing a moisture content of of from about 0.5 to 2.5% LOD, preferably between about 0.5 and about 1.8%, more preferably between 0.8 and 1.5%, and most preferably between about 0.8 and about 1.2%.

An ondansetron solid orally disintegrating dosage form for oral administration having at least one first water-dispersible component or water-insoluble cellulose derivative, a component having a —CHOH functional group, a disintegrating agent and at least one lubricant is provided. The dosage form can comprise ondansetron, a hydrophilic polymer such as microcrystalline cellulose, a component having a —CHOH functional group such as mannitol or xylitol and a disintegrating agent such as crospovidone. The lubricant may be a mixture of magnesium stearate, sodium stearyl fumarate and colloidal silicon dioxide. The present invention provides a non-effervescent tablet comprising the ondansetron dosage form. Another aspect of the invention is the treatment of emesis such as nausea and vomiting caused by cancer chemotherapy and radiation by the administration of the ondansetron formulation of the present composition. Finally, a process of forming an ondansetron disintegrating tablet using the ondansetron dosage form is disclosed.

An underfill composition with enhanced adhesion and improved resistance to cracking comprising an epoxy resin in combination with a difunctional siloxane anhydride epoxy hardener and optional reagents. In some embodiments, the epoxy resin includes a functionalized colloidal silica filler having a particle size ranging from about 1 nm to about 500 nm. The difunctional siloxane anhydride epoxy hardener can optionally be combined with liquid anhydride epoxy hardeners. Cure catalysts, hydroxyl-containing monomers, adhesion promoters, flame retardants and defoaming agents may also be added to the composition. Further embodiments of the present disclosure include packaged solid state devices comprising the underfill compositions.

The invention relates to a chemically mechanical polishing solution and a preparation process thereof, and particularly to a polishing solution containing a ceric oxide powder / colloid silicon dioxide mixed abrasive and a preparing process thereof. The polishing solution containing the mixed abrasive is simple in preparing process, practical and prone to production. Raw materials of the polishing solution comprise 3-10% of ceric oxide powder having a particle size of 100-2000 nm, 5-50% of colloid silicon dioxide having a particle size of 10-200 nm, and 0.001-0.5% of a dispersing agent, with the balance being water. The polishing solution is prepared by selecting a container, adding the colloid silicon dioxide solution, adding the ceric oxide powder, stirring uniformly, adding the dispersing agent and the water to the required volume, and stirring uniformly. The ceric oxide powder and the colloid silicon dioxide of different particle sizes are adopted as the abrasive. In the polishing solution, the smaller silicon dioxide particles decrease scratches, pits, and other defects so as to improve the surface quality, and the larger ceric oxide particles obtain a high removing rate.

The invention concerns a method of preparing the surface of a semiconductor wafer intended for microelectronics and / or optoelectronics applications. In particular, a method of preparing a SiC surface of a semiconductor wafer to make it epiready is described. The technique includes annealing the wafer in an oxidizing atmosphere, and polishing a surface of the wafer with an abrasive based on particles of colloidal silica to make the SiC wafer surface suitable for homoepitaxy or heteroepitaxy.