50 results about "Quality gate" patented technology

An anneal of a gate recess prior to formation of a gate contact, such as a Schottky contact, may reduce gate leakage and/or provide a high quality gate contact in a semiconductor device, such as a transistor. The use of an encapsulation layer during the anneal may further reduce damage to the semiconductor in the gate recess of the transistor. The anneal may be provided, for example, by an anneal of ohmic contacts of the device. Thus, high quality gate and ohmic contacts may be provided with reduced degradation of the gate region that may result from providing a recessed gate structure as a result of etch damage in forming the recess.

A method and apparatus that is useful for forming a high quality gate dielectric layer in MOS TFT devices using a high density plasma oxidation (HDPO) process. The HDPO process forms a good interface and then a second layer, which has good bulk electrical properties, is deposited at a higher deposition rate over the HDPO layer. In one embodiment a thin HDPO process layer is formed over the channel, source and drain regions to form a high quality dielectric interface and then one or more dielectric layers are deposited on the HDPO layer to form a high quality gate dielectric layer. The HDPO process generally entails using an inductively and/or capacitively coupled RF energy transmitting device to generate and control the plasma generated over the surface of the substrate and injecting a gas containing an oxidizing source to grow the interfacial layer. A second dielectric layer may then be deposited on the surface of the substrate using a CVD or plasma enhanced CVD deposition process. Aspects of the present invention also provide a cluster tool that contains at least one specialized plasma processing chamber that is capable of depositing a high quality gate dielectric layer. The cluster tool is advantageous because it supports both the pre-processing steps, such as, preheating the substrate, pre-cleaning the surface of the substrate prior to processing, and cool down after processing, all in a single controlled environment.

The silicon wires formed around metal particles by crystal growth have the problem of metal pollution. For its solution, in the present invention, a silicon bridge is formed through standard silicon processes such as the lithography and the wet etching using hydrofluoric acid performed to an SOI substrate. Thereafter, a thermal oxide film is desirably formed at a high temperature to form a high-quality gate insulating film. It is also desirable to form a coaxial gate electrode. Then, after burying the bridge sections of the silicon bridge in a resist film, the silicon on the bridge girders is removed, and thereafter, the silicon wires buried in the resist film are collected. In this manner, the silicon wires can be collected without dispersing into the hydrofluoric acid solution. Then, a transistor using the silicon wires as a channel is formed.

A CMOS device includes a p-channel MOS transistor and an n-channel MOS transistor having a structure formed on a (100) surface of a silicon substrate and having a different crystal surface, a high-quality gate insulation film formed on such a structure by a microwave plasma process, and a gate electrode formed thereon, wherein the size and the shape of the foregoing structure is set such that the carrier mobility is balanced between the p-channel MOS transistor and the n-channel MOS transistor.

The invention belongs to the technical field of semiconductor memories below 20nmm and more particularly relates to a manufacturing method of an MOS (Metal Oxide Semiconductor) transistor structure integrated with a resistive random access memory. According to the manufacturing method disclosed by the invention, a source region and a drain region of the MOS transistor are formed by a self-aligned technology, a high-quality gate dielectric layer of the MOS transistor and a resistive random access memory layer of the resistive random access memory are deposited by a primary atomic layer deposition process, and the resistive random access memory and the MOS transistor are integrated together on the premise of not increasing extra process steps. The manufacturing method disclosed by the invention can be compatible with a shallow trench isolation process, or a field oxide layer isolation process and a source/drain ion implantation or diffusion process, is simple in process steps and provides convenience for process integration and devices to develop towards a miniaturization direction.

The invention provides a manufacturing method for a separated grid type flash memory embedded into a logical circuit. According to the method, the separated grid type flash memory can be embedded into a peripheral circuit of a high-voltage circuit and the logical circuit, and the separated grid type flash memory, the high-voltage circuit and the logical circuit can be manufactured on a chip at the same time. After a stacking structure, comprising a floating gate oxide layer, a floating gate, a gate medium layer, a control gate and a hard mask layer, of the memory is formed, the thickness of a memory word line gate and the thickness of an erasing gate can be defined only through two-time polycrystalline silicon layer deposition and one-time photoetching glue line imaging treatment, and compared with three-time polycrystalline silicon layer deposition and two-time photoetching glue line imaging treatment in the prior art, the method greatly simplifies a manufacturing process. In addition, a gate medium layer of a high-voltage transistor is formed before the stacking structure of the memory is formed, and therefore the high-quality gate medium layer can be formed by means of a thermal oxidation growing method.

To provide a method for the formation of oxide films to form with advantage a high-quality oxide film having excellent uniformity in film thickness and film quality over the entire wafer. The method for the formation of oxide films comprises: the pretreatment process of forming a protective oxide film on the surface of a wafer positioned in a reaction vessel by performing oxidation treatment with radical oxidative species or an atmosphere containing radical oxidative species under depressurized conditions; and the oxide-film-formation process of forming an oxide film on the wafer by performing oxidation treatment at a predetermined temperature under depressurized conditions. The oxide-film-formation process is preferably performed following the pretreatment process in a continuous manner in the reaction vessel in which the pretreatment process is performed. The pretreatment process is preferably performed at a temperature lower than the temperature for the oxide-film-formation process and also preferably performed under depressurized conditions, the level of the depressurization being higher than the level for the oxide-film-formation process. A high-quality gate-insulating film for a transistor chip can be formed according to this method for the formation of oxide films.

The invention provides a high-quality gate oxide forming method. The method comprises the following steps that a wafer already undergoing shallow trench isolation is provided; the wafer is placed in an iCoNi reaction chamber to remove a native silicon oxide layer on the silicon face; (NH4)2SiF6 will be formed on the wafer surface during a SiCoNi etching reaction process; in a normal temperature condition, the (NH4)2SiF6 layer will not be removed in the SiCoNi reaction chamber; instead, the (NH4)2SiF6 layer will be kept as a protective layer on the wafer surface to prevent silicon exposure and native oxide regeneration; then the wafer is placed in an oxidation furnace; after the wafer enters the oxidation furnace, the (NH4)2SiF6 protective layer will be decomposed and volatilized when the temperature of the oxidation furnace rises; and if the highest technical temperature of the oxidation furnace continuously rises to satisfy the temperature and technical condition required for gate oxide growing, then the gate oxide starts to grow. By means of the technical solution, the native silicon oxide can be prevented from being formed on the wafer surface again before the gate oxide is formed. The gate oxide quality is improved. Product performance improvement can be further facilitated.

The invention belongs to the technical field of semiconductor memories and more particularly relates to an MOS (Metal Oxide Semiconductor) transistor structure integrated with a resistive random access memory and a manufacturing method of the MOS transistor structure. The MOS transistor structure integrated with the resistive random access memory, provided by the invention, comprises an MOS transistor and the resistive random access memory which are formed on a substrate, wherein a gate dielectric layer of the MOS transistor extends onto the surface of a drain region of the MOS transistor, and a resistive random access memory layer of the resistive random access memory is formed on the gate dielectric layer part which extends onto the surface of the drain region of the MOS transistor. According to the invention, the high-quality gate dielectric layer of the MOS transistor and the resistive random access memory layer of the resistive random access memory are obtained by a primary atomic layer deposition process, the resistive random access memory and the MOS transistor are integrated together, and the process steps are simple; and in addition, the manufacturing method can be compatible with a shallow trench isolation process, or a field oxide layer isolation process and a source/drain ion implantation or diffusion process and is convenient for process integration.

The present invention relates to a method for growing a robust, high-quality gate oxide layer on a silicon surface. The resultant gate oxide layer made according to the present invention can pass the standard 50K times 14V high-voltage stress testing. The preferred embodiment of this invention includes a step of preliminary low-pressure N₂O annealing that is carried out in an air-tight chamber at a temperature of less than 1000° C., a pressure below 0.2 torr, and N₂O flow rate of below 8000 sccm. The preliminary low-pressure N₂O annealing of the silicon surface is performed prior to the growth of high-quality gate oxide layer. In another preferred embodiment, N₂O may be replaced with NO.

The invention discloses a method for manufacturing self-aligning graphene transistors by ion implantation oxidation. Self-aligning of transistors is realized by combining a composite metal film with the ion implantation technology. The oxidation of a gate medium and the alignment of transistor gate and source/drain are realized by means of region selective ion implantation based on the differencein oxidation performance between different metals and graphene. Parasitic resistance can be reduced, and the exposure of graphene is avoided. A high-quality gate medium can be prepared, and the frequency characteristic of graphene transistors can be enhanced.

An automated software development and release management system. The system includes and compounds multiple quality gates along various check points and includes Key Performance Indicators (KPIs) to monitor progress and measure software quality. The system puts members of the software development team in the same place in the development cycle, which allows better and more efficient collaboration. The system enables the review of work products (i.e., instead of merely the process).