Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film transistor and manufacturing method thereof, display apparatus, method for modifying oxide film, method for forming oxide film, semiconductor device, method for manufacturing semiconductor d

A technology for thin film transistors and manufacturing methods, which is applied in the manufacture of semiconductor/solid-state devices, transistors, electrical components, etc., and can solve the problems of forming a uniform oxide film on difficult and complex surfaces, deterioration of film quality, and leakage current.

Inactive Publication Date: 2007-02-21
SHARP KK +1
View PDF7 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0019] In addition, in general, the lowering of the temperature during the manufacturing process will lead to a decrease in reliability
For example, in TEOS oxidation (CVD method), which is widely used for oxide film formation, the film quality deteriorates remarkably and leakage current occurs as the temperature lowers.
That is, if the temperature is lowered, the film quality of the oxide film will further deteriorate
In addition, as described above, it is difficult to form a uniform oxide film on a complicated surface.
[0020] In this way, in the development of flexible liquid crystal displays, etc., how to reduce the decrease in the performance and reliability of the oxide film caused by the lowering of the manufacturing temperature has become the biggest issue.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor and manufacturing method thereof, display apparatus, method for modifying oxide film, method for forming oxide film, semiconductor device, method for manufacturing semiconductor d
  • Thin film transistor and manufacturing method thereof, display apparatus, method for modifying oxide film, method for forming oxide film, semiconductor device, method for manufacturing semiconductor d
  • Thin film transistor and manufacturing method thereof, display apparatus, method for modifying oxide film, method for forming oxide film, semiconductor device, method for manufacturing semiconductor d

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0149] The following is based on Figure 1 to Figure 20 Embodiments of the present invention will be described. However, the present invention is not limited thereto.

[0150] Embodiments of the present invention will be described below by taking a thin film transistor (TFT) applied to a flexible liquid crystal display or an IC as an example. The manufacturing method (this manufacturing method) of the thin film transistor of the present invention is a kind of substrate that will form gate oxide film (chemical oxide film) be dipped in the solution that contains active oxidation species, directly oxidize this substrate surface, thereby form High-quality oxide film method.

[0151] First, problems in the manufacture of TFTs used in flexible liquid crystal displays, ICs, and the like will be described.

[0152]In order to manufacture flexible liquid crystal displays and the like, it is necessary to form TFTs on organic substrates such as PET. This organic substrate has a low m...

manufacture example 1

[0228] The following describes the formation of SiO with a film thickness of 3.5 nm by two-stage solution oxidation to form a chemical oxide film. 2 condition of the membrane.

[0229] First, in order to form the first chemical oxide film (silicon dioxide film 41), the substrate 2 to be processed is immersed in a 40% (wt) nitric acid aqueous solution without applying a voltage to form a porous film with a thickness of 1.1 nm. , The atomic density of the relatively low atomic density is 2.22×10 22 atom / cm 3 SiO 2 film (first oxide film 4a; chemical oxide film) 41 .

[0230] Next, in order to form the second chemical oxide film, the substrate on which the silicon dioxide film 41 has been formed remains immersed in the above-mentioned 40% (wt) nitric acid aqueous solution, and heated to an azeotropic nitric acid solution with a nitric acid concentration of 68% (wt). Aqueous solution (boiling point: 120.7°C), forming a thicker than the first chemical oxide film with an atomic ...

manufacture example 2

[0240] A second manufacturing example of the present invention will be described. In the case of forming a TFT using polysilicon on a substrate, a laminated silicon dioxide film (SiO 2 ). Therefore, in the example (manufacturing example 2) described here also, a silicon dioxide film is formed on polysilicon on the substrate (ie, the silicon substrate 11 is a polysilicon substrate) to manufacture a MOS capacitor (capacitance insulating film thereof).

[0241] In this case, silicon dioxide (SiO 2 )membrane.

[0242] Same as above-mentioned manufacturing example 1 (refer to Figure 2(a) to Figure 2(f) ), firstly, in order to form the first chemical oxide film, the polysilicon layer on the substrate was dipped into 40% (wt) nitric acid aqueous solution (making it contact) under the state of no voltage applied, forming a SiO layer with a thickness of 1.1 nm. 2 film (chemical oxide film) 41 (FIG. 2(c)).

[0243] Next, in order to form the second chemical oxide film, the above-m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Film thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Leakage current densityaaaaaaaaaa
Login to View More

Abstract

In a method for manufacturing a thin film transistor (1), a substrate (2) to be processed, on which the gate oxide film (4) is to be formed on a front plane, is impregnated with an oxidizing solution including an active oxidation seed to directly oxidize polysilicon (51) on the substrate (2), and the gate oxide film (4) is formed. Thus, a silicon dioxide film (42) is formed by growing a silicon dioxide film (41) in a direction of the substrate (2). Thus, an interface between the polysilicon (51) and the gate oxide film (4) is kept clean and the high-quality gate oxide film (4) having excellent dielectric breakdown strength can be uniformly formed. Therefore, the thin film transistor (1) having excellent dielectric breakdown strength can be formed at a low temperature with a high-quality oxide film provided thereon.

Description

technical field [0001] The present invention relates to a method for manufacturing a thin film transistor (TFT) and its application. The oxide film forming process included in the method is suitable for forming gate oxide films (especially silicon dioxide films) that require high quality, High reliability oxide film. [0002] In addition, the present invention relates to a method for forming an oxide film, a method for manufacturing a semiconductor device, and a device for manufacturing a semiconductor device. A method for forming a semiconductor oxide film (silicon dioxide film), a method for manufacturing a semiconductor device, and an apparatus for manufacturing a semiconductor device. Background technique [0003] A gate oxide film (gate insulating film) is an important insulating film constituting a TFT. Generally, a higher voltage is applied to the gate electrode of the TFT. Therefore, the gate oxide film is required to have complete insulation...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/336H01L21/316H01L29/786
Inventor 今井繁规猪口和彦小林光
Owner SHARP KK
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com