761 results about "Silica membrane" patented technology

Methods for forming silicon dioxide thin films on hydrophobic surfaces are provided. For example, in some embodiments, silicon dioxide films are deposited on porous, low-k materials. The silicon dioxide films can be deposited using a catalyst and a silanol. In some embodiments, an undersaturated dose of one or more of the reactants can be used in forming a pore-sealing layer over a porous material.

A method is provided for forming a silicon dioxide film using atomic layer deposition (ALD), wherein a halogen- or NCO-substituted siloxane is used as a Si source. The method includes feeding a substituted siloxane as a first reactant onto a substrate to form a chemisorbed layer of the first reactant, and thereafter feeding a compound consisting of oxygen and hydrogen as a second reactant onto the chemisorbed layer to form the desired silicon dioxide film.

Provided is a method of setting a thickness of a dielectric, which restrains the dielectric formed in an electrode from being consumed when etching a silicon dioxide film on a substrate by using plasma. In a substrate processing apparatus including an upper electrode facing a susceptor and the dielectric formed of silicon dioxide in the upper electrode, a silicon dioxide film formed on a wafer being etched by using plasma, an electric potential of the plasma facing the dielectric in a case where the dielectric is not formed in the upper electrode is estimated based on a bias power applied to the susceptor and an A/C ratio in a chamber, and the thickness of the dielectric is determined so that an electric potential of the plasma, which is obtained by multiplying the estimated electric potential of the plasma by a capacity reduction coefficient calculated when a capacity of the dielectric and a capacity of a sheath generated around a surface of the dielectric are combined, is 100 eV or less.

A process for treating silica dielectric film on a substrate, which includes reacting a suitable hydrophilic silica film with an effective amount of a multifunctional surface modification agent. The film is present on a substrate and optionally has a pore structure with hydrophilic pore surfaces, and the reaction is conducted for a period of time sufficient for said surface modification agent to penetrate said pore structure and produce a treated silica film having a dielectric constant of about 3 or less, wherein the surface modification agent is hydrophobic and suitable for silylating or capping silanol moieties on such hydrophilic surfaces. Dielectric films and integrated circuits including such films are also disclosed.

Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0° C. to 700° C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.

The silica film forming material of the present invention comprises a silicone polymer which comprises, as part of its structure, CHx, an Si—O—Si bond, an Si—CH₃ bond and an Si—CHx- bond, where x represents an integer of 0 to 2.

The invention aims to provide a light emitting device comprising a base material or protective member which has improved light transmittance, heat resistance, passivation (gas barrier, oligomer release prevention and minimized outgassing), anti-water or moisture-absorption, stability against chemical degradation, dimensional and shape stability, anti-surface-reflection, electrical insulation, UV degradation resistance, and weather resistance, and is highly productive due to possible film formation under atmospheric pressure, and hence, a light emitting device featuring high reliability, ease of manufacture and low cost. The object is attained by a light emitting device comprising a base material (1) having flexibility, light transparency and heat resistance, a lower electrode (4) having light transmittance, a light emitting layer (4), and an upper electrode (4) formed on the base material, the device further comprising a silica film and/or a siliceous film (3) which is formed on the substrate side as viewed from the light emitting layer (4) or on opposite sides of the substrate by applying polysilazane and subjecting it to oxidative treatment.

The invention discloses a graphene-containing insulated radiating composition and preparation and application thereof. The composition comprises the components of silica-coating graphene, insulated heat-conducting filler, a surface treating agent, and a function additive. The preparation method comprises the following steps of: hydrolyzing ethyl silicate on the graphene surface by the sol-gel method to obtain graphene coated with a silica film on the surface; adding the surface treating agent to a mixture of the insulated heat-conducting filler and modified graphene; uniformly agitating; then adding the function additive; and uniformly dispersing to obtain the insulated radiating composition. The composition has the advantages that the graphene is processed by insulating and coating, and the insulated heat-conducting filler and additive of other forms are coordinately added, thus the composition shows high radiating improvement effect in the plastic cement and coating fields; and the composition can be widely applied to a heating element and a radiating facility of various electronic products and electrical equipment, and can greatly improve the radiating effect as well as prolong the service life of devices.

The invention provides a method which uses a graphic substrate to improve the illumination efficiency of a GaN-based efficiency, comprising the steps as follows: a silicon dioxide film is deposited on a sapphire substrate; a photoresist graphic array is optically etched; the photoresist graphic array is taken as a mask so as to etch the silicon dioxide film with the graphic structure; the silicon dioxide film with the graphic structure is taken as a mask so as to etch the sapphire substrate and the graphics is etched onto the sapphire substrate; the sapphire substrate is thoroughly cleaned so as to form a pyramid structure with triangular sections; a low-temperature nucleation layer grows on the graphic sapphire substrate; temperature is continuously increased on the low-temperature nucleation layer so as to grow an n-typed mixed GaN layer and an array structure which has low dislocation density and V-shaped holes on the surface; a multiple quantum well layer and a p-typed material layer required when the LED structure material grows continue to grow; furthermore, the final surface is led to still have the array structure with V-shaped holes.

To achieve a higher operating speed, higher reliability, and lower power consumption by reducing the thickness of an inter-poly silicon insulator film between a floating gate and a control gate of a flash memory, a silicon dioxide film, a silicon nitride film, tantalum pentoxide, and a silicon dioxide film are formed in a multilayer structure to serve as the inter-poly insulator film between a floating gate and a control gate. With this configuration, tantalum pentoxide formed on the silicon nitride film has a dielectric constant of 50 or more, which is higher than that of the silicon dioxide film, and the thickness of the inter-poly silicon insulator film can be reduced.

The invention discloses a production method of the patterned sapphire substrate for the nitride epitaxial growth, which comprises the following steps: a silica coating is deposited on the sapphire substrate used for the nitride epitaxial growth; a general photetch technology is utilized to prepare a mask of photetch patterns; the photetch patterns are etched on the silica coating by utilizing the doped liquid of hydrofluoric acid, ammonium fluoride and H2O; with the patterned silica coating as a mask, the sapphire substrate are etched by adopting the doped liquid of sulphuric acid and phosphoric acid in a wet manner so that the patterns are etched on the sapphire substrate; a dilute hydrofluoric acid solution is used for wet etching so as to remove the residual silica coating and clean the sapphire substrate, and then the preparation of the patterned sapphire substrate is completed. The production method has the advantages of low cost, preventing the sapphire substrate from being damaged by dry etching, etc. The patterned sapphire substrate can be used for the epitaxial growth of nitrides with low dislocation density and high crystal weight.

A surface of a semiconductor wafer with a gate of a high dielectric constant film formed thereon is heated to a target temperature for a short time by irradiating the surface with a flash of light. This promotes the crystallization of the high dielectric constant film while suppressing the growth of an underlying silicon dioxide film. Subsequently, the temperature of the semiconductor wafer subjected to the flash heating is maintained at an annealing temperature by irradiating the semiconductor wafer with light from halogen lamps. An annealing process after the flash heating is performed in an atmosphere of a gas mixture of hydrogen gas and nitrogen gas. The annealing process is performed on the semiconductor wafer in the atmosphere of the hydrogen-nitrogen gas mixture, so that defects present near the interfaces of the high dielectric constant film are eliminated by hydrogen termination.

A method of making an anti-reflective film comprises preparing a liquid composition with specific amounts of tetraethyl orthosilicate, polyethylene glycol, HCl, ethanol and at least one alcohol having a higher boiling point than ethanol and miscibility with both ethanol and water; applying the liquid composition onto a surface of a substrate to form a liquid film; evaporating the ethanol and the at least one alcohol from the liquid film to form a solid film; and heating the solid film to form a silica film.

A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to reduce the surface roughness such as protrusions that cause shunts. In one embodiment, the surface roughness is reduced by coating surface with a thin silicon dioxide which fills the cavities and recesses around the protrusions and thereby reducing the surface roughness. After the silicon dioxide film is formed, a contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base.

In order to suppress the chromaticity shift and corrosion associated with the deterioration of a sulfide phosphor particle, this phosphor sheet is produced using a phosphor particle-containing resin composition which comprises: covered phosphor particles; polymerizable compound; and a polymerization initiator. The covered phosphor particles are obtained by covering phosphor particles with silicon dioxide films, wherein among the phosphor particles, at least sulfide phosphor particles are covered with silicon dioxide films that contain a metal oxide powder. Thus, the phosphor sheet can be inhibited from emitting a sulfur-based gas, and exhibits a minimized chromaticity shift, even when the phosphor sheet is present in such a manner that the edge of the phosphor layer of the sheet is in an exposed state.

A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.