Selective diffusion technology for crystalline silicon solar cell

Abstract

The invention relates to selective diffusion technology for a crystalline silicon solar cell, which comprises high-concentration phosphorous diffusion in a facade electrode grid line area and low-concentration phosphorous diffusion out of the facade electrode grid line area, and comprises the following steps: after a silicon chip is cleaned and made to be velvet, preparing a layer of dense silicon dioxide film on the silicon chip as a diffusion blocking layer, then selectively removing an oxidation film in the electrode grid line area by adopting laser grooving technology and forming a groove with a definite depth, and performing the high-concentration phosphorous diffusion to form heavy doping in the electrode area. The selective emitter solar cell prepared by the technology not only has high short wave efficiency, but also has lower electrode resistance and contact resistance; and compared with the conventional corrosion electrode figures adopting photoetching technology, the technology has the advantages of low equipment cost and high production efficiency, and is applicable to industrialized production of the crystalline silicon solar cell.

Description

technical field [0001] The invention relates to the technical field of processing crystalline silicon solar cells, in particular to a selective diffusion process for crystalline silicon solar cells. Background technique [0002] At present, the traditional implementation process of selective emitter solar cells is realized by photolithography mask technology and secondary diffusion method, but this overly complicated process affects its process efficiency and increases production costs, so it cannot be emphasized that it is simple and low-cost solar cell companies, while other secondary diffusion methods and mask methods will also increase the complexity of the process, and the increase in cell efficiency is not enough to make up for the increase in cost and the decline in process efficiency. Therefore, its industrial application is also limited. Contents of the invention [0003] The technical problem to be solved by the invention is to propose a selective diffusion proc...

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Problems solved by technology

[0002] At present, the traditional implementation process of selective emitter solar cells is realized by photolithography mask technology and secondary diffusion method, but this overly complicated process affects its process efficiency and increases production costs, so it cannot be emphasized that it is simple and low-cost solar cell companies, while other secondary diffusion methods and mask methods will also increase the complexity of the process, and the increase in cell efficiency is not enough to make up for the increase in cost and the decline in process efficiency. loss, so its industrial application is also limited

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