53results about How to "Increase the equivalent series resistance" patented technology

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

A shielded component or network for an active medical device (AMD) implantable lead includes (1) an implantable lead having a length extending from a proximal end to a distal end, all external of an AMD housing, (2) a passive component or network disposed somewhere along the length of the implantable lead, the passive component or network including at least one inductive component having a first inductive value, and (3) an electromagnetic shield substantially surrounding the inductive component or the passive network. The first inductive value of the inductive component is adjusted to a account for a shift in its inductance to a second inductive value when shielded.

The present invention generally relates to improved capacitors; in particular, the present invention provides advanced valve metal (AVM) anodes and methods for fabricating AVM anodes having complex surface and interior features for use in high energy density capacitors. Such anodes find use in high voltage capacitors incorporated into implantable medical devices (IMDs), among other uses. The AVM anodes may be pressed into virtually any arbitrary shape and may have a gradually changing (or substantially constant) density profile throughout the AVM anode. Such AVM anodes may also be perforated or shaped to receive one or more cathode members. The AVM anodes enhance packaging efficiency for compact high energy density capacitors.

An electric double layer capacitor (EDLC) in a coin or button cell configuration having low equivalent series resistance (ESR). The capacitor comprises mesh or other porous metal that is attached via conducting adhesive to one or both the current collectors. The mesh is embedded into the surface of the adjacent electrode, thereby reducing the interfacial resistance between the electrode and the current collector, thus reducing the ESR of the capacitor.

A medical lead system includes at least one bandstop filter for attenuating current flow through the lead across a range of frequencies. The bandstop filter has an overall circuit Q wherein the resultant 3 dB bandwidth is at least 10 kHz. The values of capacitance and inductance of the bandstop filter are selected such that the bandstop filter is resonant at a selected center frequency or range of frequencies. Preferably, the bandstop filter has an overall circuit Q wherein the resultant 10 dB bandwidth is at least 10 kHz. Such bandstop filters are backwards compatible with known implantable deployment systems and extraction systems.

A multilayer capacitor comprises a multilayer body in which a plurality of dielectric layers and a plurality of first and second inner electrodes are alternately laminated, and first and second terminal electrodes formed on the multilayer body. The plurality of first and second inner electrodes are electrically connected to each other through a connecting conductor. A part of the plurality of first inner electrodes and a part of the plurality of second inner electrodes are electrically connected to the first and second terminal electrodes through lead conductors, respectively. Each first inner electrode connected to the respective first terminal electrode through the lead conductor and each second inner electrode connected to the respective terminal electrode through the lead conductor are arranged at positions symmetrical to each other about the center position in the laminating direction of the multilayer body. Alternatively, one or a plurality of first inner electrodes connected to the first terminal electrode through the lead conductor and one or a plurality of second inner electrodes connected to the second terminal electrode through the lead conductor are arranged at respective positions symmetrical to each other about the center position in the laminating direction of the multilayer body.

There is provided a multilayer ceramic electronic component, including: a ceramic element having a plurality of dielectric layers laminated therein; and first and second internal electrodes formed within the ceramic element, wherein the first and second internal electrodes include 80 to 99.98 wt % of nickel (Ni), 0.01 to 10 wt % of copper (Cu), and 0.01 to 10 wt % of barium titanate (BaTiO₃).

A capacitor component includes a body with a plurality of first and second internal electrodes alternately stacked with dielectric layers interposed therebetween. First and second connection electrodes extend in a thickness direction of the body and are respectively connected to the first and second internal electrodes. First and second lower electrodes are on a lower surface of the body and are respectively connected to the first and second connection electrodes.