The invention discloses an
ultraviolet LED
flip chip which comprises the components of a substrate, and an epitaxial layer structure which is arranged on the substrate. The epitaxial layer structure comprises the components of a buffering and
nucleation layer, a
superlattice structure, a heavily doped n-type AlGaN layer, a lightly doped n-type AlGaN layer, a
quantum well active region, an
electron blocking layer, a P-type conductive layer, a reflecting layer, a current extending layer, an insulating layer and a conductive film layer, wherein the buffering and
nucleation layer, the
superlattice structure, the heavily doped n-type AlGaN layer, the lightly doped n-type AlGaN layer, the
quantum well active region, the
electron blocking layer, the P-type conductive layer, the reflecting layer, the current extending layer, the insulating layer and the conductive film layer are successively arranged in a first direction. The first direction is perpendicular with the substrate and extends from the substrate to the epitaxial layer structure. The
ultraviolet LED
flip chip has advantages of effective electric leakage prevention, high light emitting efficiency,
low voltage surge, effective static
discharge damage prevention,
high heat radiation efficiency, high reliability, etc.