412 results about "Increased thickness" patented technology

This invention relates to nonwoven fabrics with advantageous characteristics and the method to produce these fabrics. Advantageously, the fabrics of the subject invention have increased thickness (loft) compared to conventional nonwoven fabrics and have high air permeability and open space while maintaining softness and strength at the same basis weight.

The invention discloses a high-selectivity composite nanofiltration membrane and a preparation method thereof. The high-selectivity composite nanofiltration membrane comprises a nonwoven layer and a polymer porous supporting layer; and the porous supporting layer is provided with one or two polyamide surface layers prepared by reacting polyamine and/or amine polyalcohol with chlorine polyacyl. Compared with the prior art, by forming one or two polyamide surface layers on the porous supporting layer through an interfacial polymerization method, the nanofiltration membrane has increased thickness of a surface layer, has more smooth, hydrolysis-resistant, oxidation-resistant and scratch-resistant surface, and improves pollution resistance; and the surface of the membrane can carry negative or positive charges, so that the composite nanofiltration membrane has a high-selectively functional desalting layer; besides, the method for preparing the composite nanofiltration membrane is simple to operate, high water flux and desalination rate are ensured under low pressure, and the service life of the membrane component is prolonged.

A low temperature method and system configuration for depositing a doped silicon layer on a silicon substrate of a selected grade. The silicon substrate for functioning as a light absorber and the doped silicon layer for functioning as an emitter. The method comprises the acts of: positioning the silicon substrate in a chamber suitable for chemical vapour deposition of the doped silicon layer on the silicon substrate, an external surface of the silicon substrate suitable for promoting crystalline film growth; using a plurality of process parameters for adjusting growth of the doped silicon layer, the plurality of process parameters including a first process parameter of a process temperature for inhibiting diffusion of dopant atoms into the external surface of the silicon substrate, and a second process parameter of a hydrogen dilution level for providing excess hydrogen atoms to affect a layer crystallinity of the atomic structure of the doped silicon layer; exposing the external surface of the silicon substrate in the chamber to a vapour at appropriate ambient chemical vapour deposition conditions, the vapour including silicon atoms, dopant atoms and the excess hydrogen atoms, the atoms for use in growing the doped silicon layer; and originating growth of the doped silicon layer on the external surface to form an interface between the doped silicon layer and the silicon substrate, such that the doped silicon layer includes first atomic structural regions having a higher quality of the layer crystallinity next to the interface with adjacent second atomic structural regions having a lower quality of the layer crystallinity with increasing concentrations of crystal defects for increasing thickness of the doped silicon layer from the interface. The resultant silicon substrate and doped layer (or thin film) can be used in solar cell manufacturing.

Contact lenses are described with a corneal remodelling effect. This corneal remodelling effect is one or both of broad-area corneal remodelling and localised remodelling. The contact lenses may also have a refractive power. The refractive power may vary across the lens and for myopia may have increased power centrally. The increased power may be provided over a lens area that has increased thickness due to localised remodelling.

A side-gored bag is provided which includes: a first panel film, a second panel film; a pair of V-members forming side gussets; and a zipper device including a first zipper tape, and a second zipper tape. The upper edges of the V-members are situated so as to be downwardly displaced by a distance w from the upper edges of the first and second panel films. The first zipper tape has a first meshing rib and the first zipper tape is bonded in a horizontal position to the first panel film over an area of the panel film which extends by a distance W (wherein W>w) from the upper edge in such a manner that both the lower side of the zipper tape and the first meshing rib are situated below the upper edges of the V-members so as to cover an upper part of each V-member. The second zipper tape has a second meshing rib and the second zipper tape is bonded to the second panel film in such a manner that the second meshing rib is aligned with the first meshing rib. The side-gored bag also includes an area adjacent to the upper side of the first zipper tape, which is of an increased thickness as compared with a remaining area of the tape, and an area adjacent to the lower side of the first zipper tape, which is progressively reduced in thickness toward the lower side.

A wiring board has a circuit pattern that includes metal foil attached to an insulating layer, and a built-up circuit pattern disposed on top of the metal foil circuit pattern. The built-up circuit pattern is an increased thickness laminate of cold spray processed metal material. Even when a power semiconductor is mounted on the built-up circuit pattern, the heat that is generated by losses therein can be diffused by the built-up circuit pattern. The wiring board has excellent heat dissipation, can be manufactured by a small number of process steps, and is of low cost.

The present invention relates to air rich yarn and fabric with pores throughout the cross-section. Air rich yarn and fabric have high wettability, easy dryability, quick absorbency and increased thickness. When air rich yarn is used to make terry fabric it makes thicker fabric with increased capacity to absorb water and also release moisture faster while drying.

A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively etchable with respect to the metal layer. A transistor structure includes a line opening, a dielectric layer within the opening, a metal layer over the dielectric layer within the opening, and a fill layer over the metal layer within the opening. The metal layer/fill layer combination exhibits less intrinsic less than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. The inventions apply at least to 3-D transistor structures.

A semiconductor device includes a stress-accumulating insulation film formed on a semiconductor substrate so as to cover a gate electrode and sidewall insulation films, the stress-accumulating insulation film accumulating a stress therein, wherein the stress-accumulating insulation film including a channel part covering the gate electrode and the sidewall insulation films and outer parts extending outside of the channel part, the stress-accumulating insulation film having an increased thickness in the channel part as compared with the outer part.

A dental appliance having increased or decreased thickness between an upper shell and a lower shell in combination with a hinging mechanism and a system and a method for treating malocclusions are provided. The dental appliance may have an upper shell and a lower shell which receive upper teeth and lower teeth, respectively, of a user. The upper shell and the lower shell may be attached at a hinge. The dental appliance may have an increased thickness between the upper shell and the lower shell as well as an increased thickness of the hinge. In an embodiment, the dental appliance may have a decreased vertical thickness and an insertable hinging mechanism. The dental appliance may then extend treatment of malocclusions to the rear teeth of the user and may correct a dental condition, such as, for example, overbite, overjet, open bite, crowding, rotations, spacing, cross-bites, gummy smiles and temporomandibular joint problems.

A wave gear device has a rigid internal gear, a flexible external gear, and a wave generator. The tooth profiles of both gears are initially defined by a basic rack tooth profile shape. The lower parts of the dedendum portions of these tooth profiles are modified by curves C2 and C3 having pressure angles α2 and α3 that are less than the standard pressure angle α1 of the basic rack tooth profile shape C1. An increase in thickness of the tooth bottom side can be minimized even if the tooth depth is increased and the tooth thickness/tooth space ratio changed to increase the tooth thickness. Hence, the ratcheting torque of a wave gear device having a high reduction gear ratio can be increased without reducing the service life and strength of a pinion cutter for the rigid internal gear, or the fatigue strength of the flexible external gear.

An edge or corner protector comprises an apex portion and a pair of leg members extending away from the apex portion so as to define an angle of approximately 90° therebetween. The apex portion and leg members are defined by a plurality of paper plies which have at least two different width dimensions. Relatively narrow and relatively broad paper plies are alternatively arranged with respect to each other whereby the apex portion and proximal portions of the leg members are formed by both the broad and narrow paper plies whereas distal portions of the leg members are formed only by the broad paper plies. In this manner, increased thickness and strength is provided within the apex and proximal portions of the leg members as needed, the distal portions of the leg members nevertheless facilitate mounting, positioning, and orientation of the edge or corner protectors upon edge or corner regions of articles to be protected, and a substantial reduction in the overall raw material cost is achieved.

Systems and methods for generating three-dimensional design lasts for footwear include: (a) generating a three-dimensional last structure on a computer display (e.g., having the appearance of a conventional footwear last structure); (b) receiving user input indicating offset values for various zones of the last structure, wherein the user input indicates offset values for one or more of: a toe region, a heel region, an ankle region, a forefoot region, and/or an instep region; and (c) generating a three-dimensional design last for the footwear on the computer based on the three-dimensional last structure and the user input indicating the desired offset values. The three-dimensional design last may constitute a modified version of the three-dimensional last structure that has an increased thickness to simulate a desired thickness of an upper material placed on the last structure and/or to more closely simulate an appearance of an actual footwear upper.

Power distribution networks in a three-dimensional (3D) integrated circuit (IC) (3DIC) are disclosed. In one aspect, a voltage drop within a power distribution network in a 3DIC is reduced to reduce unnecessary power dissipation. In a first aspect, interconnect layers devoted to distribution of power within a given tier of the 3DIC are provided with an increased thickness such that a resistance of such interconnect layers is reduced relative to previously used interconnect layers and also reduced relative to other interconnect layers. Further voltage drop reductions may also be realized by placement of vias used to interconnect different tiers, and particularly, those vias used to interconnect the thickened interconnect layers devoted to the distribution of power. That is, the number, position, and/or arrangement of the vias may be controlled in the 3DIC to reduce the voltage drop.

An insulating glass (IG) window unit includes first and second substrates, and a low-emissivity (low-E) coating supported by one of the substrates. The low-E coating has two silver based infrared (IR) reflecting layers and allows the IG window unit to realize an increased SHGC to U-value ratio, and an increased thickness ratio of an upper silver based layer of the coating to a bottom silver based layer of the coating. The low-E coating is designed to have a low film-side reflectance, so that for example when the low-E coating is used on surface number three of an IG window unit the IG window unit can realize reduced visible reflectance as viewed from the outside of the building on which the IG window unit is mounted or is to be mounted.