Ultraviolet LED flip chip

Abstract

The invention discloses an ultraviolet LED flip chip which comprises the components of a substrate, and an epitaxial layer structure which is arranged on the substrate. The epitaxial layer structure comprises the components of a buffering and nucleation layer, a superlattice structure, a heavily doped n-type AlGaN layer, a lightly doped n-type AlGaN layer, a quantum well active region, an electron blocking layer, a P-type conductive layer, a reflecting layer, a current extending layer, an insulating layer and a conductive film layer, wherein the buffering and nucleation layer, the superlattice structure, the heavily doped n-type AlGaN layer, the lightly doped n-type AlGaN layer, the quantum well active region, the electron blocking layer, the P-type conductive layer, the reflecting layer, the current extending layer, the insulating layer and the conductive film layer are successively arranged in a first direction. The first direction is perpendicular with the substrate and extends from the substrate to the epitaxial layer structure. The ultraviolet LED flip chip has advantages of effective electric leakage prevention, high light emitting efficiency, low voltage surge, effective static discharge damage prevention, high heat radiation efficiency, high reliability, etc.

Description

technical field [0001] The invention relates to the technical field of semiconductor light-emitting components, and more specifically, relates to an ultraviolet LED flip-chip. Background technique [0002] With the continuous development of III-nitride semiconductor materials and epitaxial processes, the output intensity of ultraviolet LEDs is also increasing. Compared with traditional ultraviolet light sources, ultraviolet LEDs have the advantages of energy saving, long life, low working voltage, high efficiency, and environmental protection; they play an extremely important role in the fields of sterilization, printing lithography, and communication detection. [0003] However, in the preparation process of the existing ultraviolet LED epitaxial chips, the light efficiency is low due to the low doping efficiency of semiconductor materials, poor epitaxial quality and low carrier concentration; and the growth of substrates, epitaxial layers and other materials In the proces...

AI Technical Summary

Problems solved by technology

[0005] However, through the above-mentioned improvement method, the packaging cost of the LED chip is greatly increased, and the implementation difficulty of the process is increased and the yield of the LED chip is reduced.

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