92results about How to "Additional circuitry" patented technology

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

A method for forming thick oxide at the bottom of a trench formed in a semiconductor substrate includes forming a conformal oxide film that fills the trench and covers a top surface of the substrate. and etching the oxide film off the top surface of the substrate and inside the trench to leave a substantially flat layer of oxide having a target thickness at the bottom of the trench. The oxide film can be deposited by sub-atmospheric chemical vapor deposition processes, directional Tetraethoxysilate (TEOS) processes, or high density plasma deposition processes that form a thicker oxide at the bottom of the trench than on the sidewalls of the trench.

A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions having the first conductivity type formed in the well region adjacent the active trench, and a first termination trench extending below the well region and disposed at an outer edge of an active region of the device. The sidewalls and bottom of the active trench are lined with dielectric material, and substantially filled with a first conductive layer forming an upper electrode and a second conductive layer forming a lower electrode, the upper electrode being disposed above the lower electrode and separated therefrom by inter-electrode dielectric material. The first termination trench can be lined with a layer of dielectric material that is thicker than the dielectric material lining the sidewalls of the active trench, and is substantially filled with conductive material.

The invention relates to a power amplifier module comprising a first amplifier 2 having a first front-end 4 and a first backend amplifier stage 5 and a second amplifier 3 having a second front-end 6 and a second backend amplifier stage 7, the first amplifier and the second amplifier being arranged in a Bridge Tied Load (BTL) configuration with feedback over the load,characterized in thatthe first and the second backend amplifier stages having point symmetrical transfer functions with respect to the origin,the input current i1 of the first backend amplifier stage being substantially equal to the input current i2 of the second backend amplifier stage.

An architecture and methodology for test data compression using combinational functions to provide serial coupling between consecutive segments of a scan-chain are described. Compressed serial-scan sequences are derived starting from scan state identifying desired Care_In values and using symbolic computations iteratively in order to determine the necessary previous scan-chain state until computed previous scan-chain state matches given known starting scan-chain state. A novel design for a new flip-flop is also presented that allows implementing scan-chains that can be easily started and stopped without requiring an additional control signal. Extensions of the architecture and methodology are discussed to handle unknown (X) values in scan-chains, proper clocking of compressed data into multiple scan-chains, the use of a data-spreading network and the use of a pseudo-random signal generator to feed the segmented scan-chains in order to implement Built In Self Test (BIST).

A content addressable memory (CAM) device, method, and method of generating entries for range matching are disclosed. A CAM device (800) according to one embodiment can include a pre-encoder (806) that encodes range bit values W into additional bits E. Additional bits E can indicate compression of range rules according to particular bit pairs. A CAM array (802) can include entries that store compressed range code values (RANGE) with corresponding additional bit values (ENC). Alternate embodiments can include pre-encoders that encode portions of range values (K1 to Ki) in a “one-hot” fashion. Corresponding CAM entries can include encoded value having sections that each represent increasingly finer divisions of a range space.

Methods and apparatus are described in which, at design-time a thorough analysis and exploration is performed to represent a multi-objective “optimal” trade-off point or points, e.g. on Pareto curves, for the relevant cost (C) and constraint criteria. More formally, the trade-off points may e.g. be positions on a hyper-surface in an N-dimensional Pareto search space. The axes represent the relevant cost (C), quality cost (Q) and restriction (R) criteria. Each of these working points is determined by positions for the system operation (determined during the design-time mapping) for a selected set of decision knobs (e.g. the way data are organized in a memory hierarchy). The C-Q-R values are determined based on design-time models that then have to be “average-case” values in order to avoid a too worst-case characterisation. At processing time, first a run-time BIST manager performs a functional correctness test, i.e. checks all the modules based on stored self-test sequences and “equivalence checker” hardware. All units that fail are deactivated (so that they cannot consume any power any more) and with a flag the run-time trade-off controllers, e.g. Pareto controllers, are informed that these units are not available any more for the calibration or the mapping. At processing time, also a set of representative working points are “triggered” by an on-chip trade-off calibration manager, e.g. a Pareto calibration manager, that controls a set of monitors which measure the actual C-Q-R values and that calibrates the working points to their actual values. Especially timing monitors require a careful design because correctly calibrated absolute time scales have to be monitored.

Apparatus and methods for regulating gate delays of synchronous and asynchronous digital circuits. Thermally-sensitive circuits include, generally, temperature sensitive voltage sources outputting a voltage signal indicative of the temperature of the digital circuit, where the voltage signal reflects non-linear temperature sensitivity above a predetermined threshold temperature, and delay mechanisms receiving said temperature sensitive voltage signal(s) as input and being configured to automatically continuously modulate the speed of signal propagation through the circuit in response to said voltage signal, thereby causing circuit elements within the circuits to switch less frequently and consequently causing the circuit elements to generate less heat with increasing circuit temperature.

A process and product for making integrated circuits with dense logic and / or linear regions and dense memory regions is disclosed. On a common substrate, a dual hard mask process separately forms stacks of logic and / or linear transistors and EEPROM memory transistors. By using the process, the logic and / or linear and memory transistors are made with different sidewall insulating layers. The logic and / or linear transistors have relatively thin sidewall insulating layers sufficient to provide isolation from adjacent devices and conductors. The memory transistors have thicker sidewall insulating layer to prevent the charge stored in the memory device from adversely influencing the operation of the memory transistor.

A headend transmitter that transmits 1024 QAM including a 256 QAM modulator which has been modified to have more aggressive forward error correction processing. The 256 QAM modulator outputs 256 QAM points to a summer. Another data modulator receives additional data to be transmitted in a separate, substantially less complex constellation. This modulator processes the additional data to do forward error correction thereon and then maps the encoded data into a less complex constellation such as QPSK, 16 QAM etc. The additional data constellation points are then amplified in a variable gain amplifier and fed to a summer where each additional data point is added by vector summation to one 256 QAM point. The output 1024 QAM point is filtered and shifted to the desired transmission frequency. Legacy cable modem receivers can still receive the 256 QAM point since the addition of the new data just appears to be noise which they can overcome using the parity bits encoded in the transmitted symbols. 1024 QAM cable modem receivers receive both the 256 QAM points and the new data points and output both.