566results about How to "Reduce film thickness" patented technology

A first insulating layer including a first contact pad made of conductive polysilicon and a second insulating layer including a second contact pad are formed over a semiconductor silicon layer. After this, a via hole for a through-hole electrode is formed until the via hole penetrates through at least the semiconductor silicon layer and the first contact pad and reaches to the second contact pad.

An improved EMI shielded detection system. The disclosed system may include features configured to increase radio wave and microwave absorbance while retaining significant transparency at visible and/or infrared wavelengths, thus increasing EMI shielding efficiency. This may be accomplished through the use of a conductive mesh having appropriately chosen dimensions and spacing, and embedded in a transparent medium. To minimize the impact of the mesh on the effective aperture of the medium, the strands of the mesh may be made relatively narrow, and to provide sufficient shielding despite the narrow strand width, the mesh may be embedded relatively deeply in the medium.

A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The described methods use process variation and electrical impact to direct the insertion of dummy fill into an integrated circuit.

A perpendicular magnetic recording medium for enabling high density recording is disclosed. The perpendicular magnetic recording medium includes a substrate on which a soft magnetic underlayer, a seed layer made of a non-crystalline material, an underlayer made of Ru or an Ru alloy including Ru as a main component, and a recording layer including a first magnetic layer and a second magnetic layer. The first and second magnetic layers include a plurality of magnetic grains having easy magnetization axes in a substantially perpendicular direction with respect to the substrate surface, and first and second nonmagnetic non-soluble phases segregating the magnetic grains of the first and second magnetic layers, respectively. The first magnetic layer includes the first non-soluble phase at a first atomic concentration that is higher than a second atomic concentration of the second non-soluble phase in the second magnetic layer.

The present invention provides a semiconductor light emitting element realizing lower resistance, higher output, higher power efficiency, higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element including a light emitting section, a first electrode, and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes being arranged on the first conductive type semiconductor layer and a second conductive type semiconductor layer of the light emitting section, respectively; and a light transmissive insulating film formed on at least one part of the second conductive type semiconductor layer; wherein the second electrode includes a first layer of a light transmissive conductive film for covering at least one part of the second conductive type semiconductor layer and a second layer which is arranged on at least one part of the light transmissive insulating film and which conducts to the first layer; a light reflecting part is formed on a surface side of the first layer, and aboundary region of the light transmissive insulating film and the semiconductor structure; and the second layer side surface of the light transmissive insulating film is distant from the semiconductor structure than the surface of the first layer.

The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

A cellulose ester film and its manufacturing method are disclosed, the cellulose ester film comprising a compound represented by the following formula (1) in an amount of from 1 to 30% by weight,

wherein Y represents an ester bond or a divalent organic group containing an ester bond, RTA and Rd independently represent a substituent, and m and n independently represent an integer of 0 to 5, provided that when m or n is not less than 2, plural Ras or Rbs may be the same or different.

A surface capacitive touch panel includes a transparent substrate, a decorative layer, a metal trace pattern layer, and a passivation layer. The decorative layer and the capacitive sensing electrode layer are formed on the transparent substrate. The metal trace pattern layer is formed on the capacitive sensing electrode layer. The decorative layer is disposed at a position substantially overlapping the metal trace pattern layer.

There is provided a lithium polymer secondary cell in which reduction of the film thickness of a solid electrolyte can be realized. The lithium ion secondary cell consists essentially of a composite electrode as a positive electrode having a positive electrode layer, containing a mercaptide compound and a conductive material, carried on a collector; the hydrogen atom of at least one mercapto group in the mercaptide compound being substituted with a lithium atom; a polyelectrolyte; and a lithium negative electrode.

In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET.

A solid-state imaging device having, in each of unit pixels, an on-chip microlens composed of plural convex lens parts for each of photoelectric conversion elements provided on a semiconductor chip is disclosed. A floating diffusion part and a signal-charge read gate for taking out a signal charge from the photoelectric conversion element are provided on a region positioned in a boundary of each convex lens part of the on-chip microlens. A wiring for the floating diffusion part and a wiring for the read gate are provided along the respective boundaries of the convex lens parts of the on-chip microlens. In this device, the film thickness of the on-chip microlens can be reduced with regard to the area of each unit pixel, thereby facilitating the process control and enhancing the light transmission efficiency. It is also possible to enhance the circuit wiring efficiency in each unit pixel while avoiding any incomplete charge transfer to consequently improve the picture quality.

The present invention provides a uniaxially oriented multilayer film comprising at least (i) a layer (A) and (ii) a layer (B), wherein said layer (A) comprises a linear low density polyethylene (LLDPE) comprising (e.g. selected from):—a multimodal LLDPE produced using a Ziegler Natta catalyst (znLLDPE), or—a LLDPE produced using a single site catalyst (mLLDPE) or—a mixture of a mLLDPE and a multimodal znLLDPE, said layer (B) comprises a multimodal LLDPE, and said multilayer film is in the form of a stretched film which is uniaxially oriented in the machine direction (MD) in a draw ratio of at least 1:3.

A solar cell module includes: a photoelectric conversion body 101 having an uneven surface on a light-entering surface; and a protection layer 10 made of a resin and provided to cover the uneven surface. In a cross section of the protection layer 10 taken in parallel to a light-entering direction, a thickness W2 of a projected portion on the uneven surface is smaller than a thickness W1 of a recessed portion on the uneven surface.

Disclosed is a pigment dispersion exhibiting both high contrast and adequate dispersion stability, wherein a granulated pigment is used. Also disclosed is a coloring composition for color filters having good developability, which uses the pigment dispersion. Specifically disclosed is a pigment dispersion containing a pigment, a solvent and a dispersing agent, which is characterized in that the dispersing agent contains a block copolymer composed of a block A having an affinity for solvents and a block B having a functional group containing a nitrogen atom. This pigment dispersion is also characterized in that the dispersing agent has an amine number of not less than 80 mgKOH/g but not more than 150 mgKOH/g in terms of the effective solid content. Also specifically disclosed is a use of such a pigment dispersion.

In a dehumidification unit comprising alternate laminations of an adsorption element (1) which supports an adsorbent and which is provided with a first air ventilation passage (3) and a cooling element (2) which is provided with a second air ventilation passage (4), the first air ventilation passage (3) of the adsorption element (1) and the second air ventilation passage (4) of the cooling element (2) are adjacently formed, with a single plate member (P) lying between the first and second air ventilation passages (3, 4). As a result of such arrangement, as compared with a structure in which the air ventilation passages (3, 4) are adjacently formed with two plate members lying therebetween, the performance of heat transfer between the air ventilation passages (3, 4) is further improved, and the action of absorbing and removing heat of adsorption is promoted, whereby the dehumidification capability of the dehumidification unit is maintained at high levels over a long period of time. Furthermore, the dehumidification unit is made compact relative to its height direction by an amount corresponding to reduction in the number of plate members lying between the first air ventilation passage (3) and the second air ventilation passage (4), and cost savings are provided because of reduction in the number of component members.

A method of forming a resist pattern, including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent under action of an acid and an acid-generator component (B) which generates an acid upon exposure, conducting exposure of the resist film, and patterning the resist film by a negative tone development using a developing solution containing an organic solvent, wherein the base component (A) includes a resin component (A1) containing a structural unit (a0) derived from an acrylate ester containing an acid decomposable group which generates an alcoholic hydroxy group by the action of acid to thereby exhibit increased hydrophilicity.

Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).