55results about How to "Good resistive properties" patented technology

The invention belongs to the technical field of non-volatile resistive memory devices, in particular to a polycrystalline tin dioxide resistive thin film and its preparation method and application. The invention uses glass as a substrate, uses a pure metal tin target material, and utilizes a DC magnetron sputtering technology under a certain temperature condition to prepare a polycrystalline tin dioxide semiconductor resistive variable film. Ni top electrode and platinum titanium bottom electrode were prepared by DC magnetron sputtering to test the resistive switching properties of polycrystalline tin dioxide resistive switching films. The ratio of the high and low resistance states of the polycrystalline tin dioxide resistive film is greater than 100, the erasable times of DC scanning are greater than 250 times, and the high and low resistance state maintenance time is greater than 106 seconds. The polycrystalline tin dioxide resistive switch film can be used as a resistive switch material of a resistive switchable memory. The invention also relates to a resistive variable memory using polycrystalline tin dioxide film as a resistive variable material. The invention has good application prospect in the field of non-volatile storage.

The invention belongs to the technical field of semiconductors and particularly relates to a ZnO/NiO heterostructure orderly multi-hole thin film and a manufacturing method thereof. A new option is provided for semiconductor materials. According to the technical scheme, the ZnO/NiO heterostructure orderly multi-hole thin film comprises a conducting substrate and a heterostructure growing on the conducting substrate, and the heterostructure is formed by a p type NiO orderly multi-hole thin film and an n type ZnO orderly multi-hole thin film which grows in sequence from bottom to top. The invention further provides a manufacturing method of the ZnO/NiO heterostructure orderly multi-hole thin film. The ZnO/NiO heterostructure orderly multi-hole thin film can be widely used in the fields such as an ultraviolet detector, a light-emitting diode and a resistance random access memory.

The present invention is the aqueous floor polishing composition which contains the polyoxyalkylene diester compound represented by the following general formula (1) and does not contain the phosphorus-containing plasticizer. R¹ and R² represent each independently alkyl groups having 1 to 24 carbon atoms, m represents an integer from 2 to 4, n represents a number from 2 to 40.

The aqueous floor polishing composition of the present invention does not contain the phosphorus-containing plasticizer. Therefore, it does not affect the environment negatively, in spite of having excellent leveling properties, lustering properties and heel mark resistance properties.

A flux-cored wire according to an aspect of the present invention includes: a steel sheath; and a flux filling the inside of the steel sheath, in which the flux contains 0.11% or more in total of a fluoride in terms of F-equivalent value, 4.30% to 7.50% of a Ti oxide in terms of TiO₂ equivalent, 0.30% to 2.40% in total of an oxide in terms of mass %, and 0% to 0.60% in total of a carbonate in terms of mass %, the amount of a Ca oxide in terms of CaO is less than 0.20% in terms of mass %, the amount of CaF₂ is less than 0.50%, a chemical composition of the flux-cored wire is within a predetermined range, a Z value is 2.00% or less, a V value is 5.0 to 27.0, and Ceq is 0.30% to 1.00% or less.

The invention belongs to the field of flexible pressure sensors and particularly relates to a flexible wearable mechanical sensor and a manufacturing method thereof. A carbon nanotube/graphene composite film material for study on a supercapacitor and a battery is used for a stress sensor. Graphene fragments in the carbon nanotube/graphene composite film material are used for forming isolated island conductive regions, carbon nanotubes become bridges connecting the island graphene blocks, and an island bridge structure formed by the two forms a conductive channel between electrodes. Due to thestructural feature, the resistance model of the whole device changes a lot, and good resistance change feature is expressed. The strain coefficient of the flexible wearable mechanical sensor can reachas high as 190, the sensitivity is higher, a high measurable range is reached, a tensile range of 150% can be reached maximally, the device repeatability is strong, the process is simple, and the cost is low.

The invention discloses an organic electrode resistive random access memory. A PCBM organic electrode dielectric layer, a Zr<0.5>Hf<0.5>O<2> resistive conversion layer and an Ag electrode layer are formed on a substrate in turn. A preparation method of the resistive random access memory is also disclosed, comprising the following steps: cleaning and drying a substrate; spin-coating the substrate with PCBM solution and vacuum-drying the PCBM solution to form a PCBM organic electrode dielectric layer; growing a Zr<0.5>Hf<0.5>O<2> resistive conversion layer on the PCBM organic electrode dielectric layer through magnetron sputtering; and growing an Ag electrode layer on the Zr<0.5>Hf<0.5>O<2> resistive conversion layer. As a PCBM film is used as the organic electrode dielectric layer of the resistive random access memory, the resistive random access memory is different from a traditional memory prepared from oxide in that the resistive random access memory has a unique structure and good performance. Thus, the resistive random access memory has more stable storage performance, strong durability, and a wider application prospect.

The invention discloses an all-carbon memristor comprising a substrate, a graphene bottom electrode layer, a graphene oxide intermediate dielectric layer and a graphene top electrode layer that are arranged successively from bottom to top. In addition the invention also discloses a preparation method. The method comprises: step one, preparing a graphene bottom electrode layer on a substrate by using a suction filtration method; step two, transferring a graphene oxide intermediate dielectric layer on the graphene bottom electrode layer by using a suction filtration method; and step three, transferring the graphene top electrode layer on the graphene oxide intermediate medium layer by using a suction filtration method. According to the invention, the all-carbon memristor is prepared by usingthe low temperature solution method, so that the cost of preparing the memristor is reduced substantially. The process is simple. The all-carbon memristor and the preparation method thereof are suitable for the large-scale industrial production.

A fiber laser system enables an improved reflection resistance property. The fiber laser system includes fiber lasers (2 through 4) each having a laser medium which is an optical fiber made from silica glass. A difference between respective lasing wavelengths of any given two of the fiber lasers is greater than a wavelength equivalent to a half width at half maximum of a peak deriving from a vibration mode of a planar four-membered ring of a Si—O network structure of silica glass.

The invention discloses a preparation method of a single-layer nano-film memristor using an LTCC green tape as a substrate. According to the invention, cavities and ionized oxygen ions generated by the single-layer nano-film memristor under a bias voltage are utilized, the change principle of device resistance is realized dependent on the changes of the generation numbers of the cavities and the ionized oxygen ions, and from technology simplification and resistive film raw material formula improvement, the preparation method is characterized in that a pre-sintering step of the resistive film ceramic material is omitted, a ceramic raw material lower in sintering temperature is selected, and a lower sintering temperature is adopted; B site substitution is carried out by replacing Ti4+ with an X2+ part, so that the asymmetry of the molecule structure and the number of internal cavities of the resistive film are increased; in addition, a series of technical means is adopted, for example, film plating is carried out on the LTCC green tape to form a flexible lower electrode, the preparation technology is simplified, the production efficiency is improved, the production energy consumption and the manufacturing cost are lowered, and the memristive performance of the memristor is substantially improved.

A memristor switching device based on a-TSC: O ceramic film and a preparation method thereof belong to the technical field of photoelectric devices. On the basis of the traditional memristor switchingdevice structure, the invention innovatively proposes a dielectric layer structure of a TSC: O thin film/a SiOx thin film, which widens the selection range of the dielectric layer material of the memristor switching device. As the resistivity of the a-TSC: O film is adjustable in a wide range, and the a-SiOx thin films are transparent and can provide oxygen vacancy electromigration channels, thea-TSC: O films have good resistance and can be used as the dielectric layer of memristor switches. At the same time, due to intrinsic a-TSC ceramic thin film has excellent conductivity and near infrared transmittance, it can be used as top electrode material to construct near infrared transparent memristor switching device together with top electrode formed by transparent conductive thin film. Inaddition, the memristor switching device provided by the invention has the advantages of simple preparation process, low cost and high reliability, and is favorable for realizing large-scale production.

The invention discloses a memory cell of a resistor type random access memory, which comprises an insulation substrate, a first electrode, an intermediate layer and a second electrode, wherein the first electrode is arranged on the surface of the insulation substrate, the intermediate layer is arranged on the surface of the first electrode, and the second electrode is arranged on the intermediate layer. The intermediate layer consists of a poly Schiff base film doped with protonic acid, wherein the poly Schiff base film is formed by doping protonic acid on nitrogen atoms of imine double bond (C=N) in the poly Schiff base. Compared with a memory cell with common poly Schiff base serving as the intermediate layer, power consumption of the memory cell with the poly Schiff base film doped with protonic acid as the intermediate layer can be reduced effectively, self-rectifying of the memory cell is realized, resistance change of the memory cell is slow without sudden change, better uniformity of resistance change can be achieved and the memory cell has potential application value in the field of memory devices.