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57results about How to "Good resistive properties" patented technology
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Faced foam insulation board and froth-foaming method for making same
InactiveUSRE36674E1Big lossSimple and economical mannerConfectionerySweetmeatsProduction lineEngineering
A method for continuously producing an insulation board comprising a rigid plastic foam core having two major surfaces and a facing material on one or both of the major surfaces, the method including conveying a facing material along a production line, depositing a partially expanded froth foam of a plastic mixture, which contains at least one frothing agent, on the facing material, and further expanding and curing the froth foam in contact wiht the facing material to form the insulation board. The board is particularly useful as roof insulation.
Owner:THE DOW CHEM CO
Process of making dispersed polyetherimide micronized particles and process of coating and further forming of these particles products made therefrom
InactiveUS20140272430A1Improve interface adhesionImprove performanceSynthetic resin layered productsPretreated surfacesFiberPolymer science
Processes involving wetting fibers with an aqueous dispersion of micronized thermoplastic powders; processes for producing an aqueous dispersion of micronized thermoplastic powders; processes of chemically surface cross-linking micronized particles; and articles of produced therefrom.
Owner:SABIC GLOBAL TECH BV
Silicon oxycarbide film and RRAM (resistive random access memory)
ActiveCN105977379AIncrease defect concentrationGood resistive propertiesElectrical apparatusStatic random-access memoryRandom access memory
The invention provides a silicon oxycarbide film and an RRAM (resistive random access memory). The molecular formula of a silicon oxycarbide film resistive material is SiCxOy, wherein x is from 1.21 to 0.21, y is from 1.45 to 2.01, and x and y are in negative correlation. The thickness of the film is 50nm or less. The RRAM comprises a top electrode, a resistive dielectric layer, a substrate and a back electrode, and is characterized in that the resistive dielectric layer is the silicon oxycarbide film. The top electrode is made of Ag and Al. The RRAM is prepared by a material compatible with the COMS technology, and physical deposition film equipment is mainly used in a preparation process. No high-temperature technology is employed, and the consumption of energy is reduced. Silicon oxycarbide films with different defect concentrations can be obtained through the control of gas proportion. For an SiC0.202.01 material, the switch ratio reaches 500, and can completely meet the actual demands (the switch ratio is greater than 10). Meanwhile, the RRAM based on the silicon oxycarbide material has a self-rectification effect, thereby simplifying the design of an external circuit.
Owner:ZHEJIANG NORMAL UNIVERSITY
A polycrystalline tin dioxide resistive thin film and its preparation method and application
InactiveCN102260846AGood resistive propertiesResistance stableVacuum evaporation coatingSputtering coatingTin dioxideSputtering
The invention belongs to the technical field of non-volatile resistive memory devices, in particular to a polycrystalline tin dioxide resistive thin film and its preparation method and application. The invention uses glass as a substrate, uses a pure metal tin target material, and utilizes a DC magnetron sputtering technology under a certain temperature condition to prepare a polycrystalline tin dioxide semiconductor resistive variable film. Ni top electrode and platinum titanium bottom electrode were prepared by DC magnetron sputtering to test the resistive switching properties of polycrystalline tin dioxide resistive switching films. The ratio of the high and low resistance states of the polycrystalline tin dioxide resistive film is greater than 100, the erasable times of DC scanning are greater than 250 times, and the high and low resistance state maintenance time is greater than 106 seconds. The polycrystalline tin dioxide resistive switch film can be used as a resistive switch material of a resistive switchable memory. The invention also relates to a resistive variable memory using polycrystalline tin dioxide film as a resistive variable material. The invention has good application prospect in the field of non-volatile storage.
Owner:FUDAN UNIV
ZnO/NiO heterostructure orderly multi-hole thin film and manufacturing method thereof
ActiveCN104465987ALarge specific surface areaPromote absorptionFinal product manufactureSuperimposed coating processUltraviolet detectorsSemiconductor materials
The invention belongs to the technical field of semiconductors and particularly relates to a ZnO / NiO heterostructure orderly multi-hole thin film and a manufacturing method thereof. A new option is provided for semiconductor materials. According to the technical scheme, the ZnO / NiO heterostructure orderly multi-hole thin film comprises a conducting substrate and a heterostructure growing on the conducting substrate, and the heterostructure is formed by a p type NiO orderly multi-hole thin film and an n type ZnO orderly multi-hole thin film which grows in sequence from bottom to top. The invention further provides a manufacturing method of the ZnO / NiO heterostructure orderly multi-hole thin film. The ZnO / NiO heterostructure orderly multi-hole thin film can be widely used in the fields such as an ultraviolet detector, a light-emitting diode and a resistance random access memory.
Owner:SOUTHWEST UNIVERSITY
A preparing method for an inorganic halogen perovskite film
InactiveCN108525963AImprove stabilityGood resistive propertiesLiquid surface applicatorsElectrical apparatusHalogenSolvent
The invention discloses a preparing method for an inorganic perovskite film. The method includes the following steps: spraying perovskite precursor solution CsPbBr3 on the surface of a clean bottom electrode under 80-100 DEG C, spin-coating and adding a poor solvent on the bottom electrode with deposits of the perovskite CsPbBr3, performing annealing processing under 250-300 DEG C, and obtaining the inorganic perovskite film. The poor solvent is added in the spin coating process of the CsPbBr3 perovskite film prepared by the spraying method, by changing the ratio relation between butyric acidand toluene of the poor solvent, the crystal grain morphology of the CsPbBr3 film is controlled, the stability of the CsPbBr3 film is improved, the CsPbBr3 film has excellent resistive switching property, and the film is applied widely in the field of the memristor.
Owner:NANJING UNIV OF SCI & TECH
Resistive random access memory based on polymer/metal ion composite system, and preparation method for resistive random access memory
ActiveCN102412368AImprove consistencyHigh repeatabilitySolid-state devicesSemiconductor/solid-state device manufacturingMulti valuedIon
The invention discloses a resistive random access memory based on a polymer / metal ion composite system, and a preparation method for the resistive random access memory. The resistive random access memory comprises an insulating substrate, and a bottom electrode, a top electrode and a polyimide / metal ion composite film which are arranged on the insulating substrate; and the polyimide / metal ion composite film is positioned between the bottom electrode and the top electrode. The resistive random access memory is high in repeatability, response speed, reliability, simple in structure and low in manufacturing cost, is used for the field of highly integrated high-capacity multi-value memories, and has high application value.
Owner:FUZHOU UNIVERSITY
Transparent flexible resistance random access memory and manufacturing method therefor
InactiveCN102881822AGood resistive propertiesSolid-state devicesSemiconductor/solid-state device manufacturingCapacitanceXylylene
The invention discloses a transparent flexible resistance random access memory and a manufacturing method for the transparent flexible resistance random access memory. The transparent flexible resistance random access memory comprises a transparent flexible substrate and a device unit with an MIM (metal injection molding) capacitor structure; a bottom layer and a top layer of the device unit are transparent flexible electrodes; and a middle functional layer is a poly-p-xylylene transparent film. The poly-p-xylylene material has good resistance characteristic; and the substrate, the electrodes and the middle functional layer of the device are all manufactured by a transparent flexible material so as to obtain the full-transparent flexible resistance random access memory. The transparent flexible resistance random access memory can be applied to a transparent flexible electronic system.
Owner:PEKING UNIV
Rubber composition, rubber composition for tires, and pneumatic tire
InactiveUS20160340500A1Improve rigidityGood dispersionSpecial tyresRolling resistance optimizationPolymer scienceRolling resistance
Provided are a modified cellulose fiber-containing rubber composition and rubber composition for tires that are allowed to simultaneously achieve excellent rigidity, excellent tensile properties, and low energy loss by improving the dispersibility of the cellulose fiber in rubber, as well as a pneumatic tire formed from the rubber composition, having excellent handling stability, excellent rolling resistance properties, and excellent durability. The present invention relates to a modified cellulose fiber-containing rubber composition containing: a modified cellulose fiber (A) obtained by adding a C15 or higher cyclic polybasic acid anhydride (a) containing a hydrophobic group to a cellulose fiber through esterification; a dispersing polymer (B) having a softening point of 135° C. or lower; and a rubber component (C).
Owner:SUMITOMO RUBBER IND LTD
Aqueous floor polishing composition
InactiveUS20130245190A1Excellent propertyGood resistive propertiesAqueous dispersionsThin material handlingChemistryPlasticizer
Owner:ADEKA CORP
Flux-cored wire, manufacturing method of welded joint, and welded joint
ActiveUS20190329347A1High strengthExcellent cold-cracking resistance propertyWelding/cutting media/materialsWelding electrode featuresCarbonateWelding joint
A flux-cored wire according to an aspect of the present invention includes: a steel sheath; and a flux filling the inside of the steel sheath, in which the flux contains 0.11% or more in total of a fluoride in terms of F-equivalent value, 4.30% to 7.50% of a Ti oxide in terms of TiO2 equivalent, 0.30% to 2.40% in total of an oxide in terms of mass %, and 0% to 0.60% in total of a carbonate in terms of mass %, the amount of a Ca oxide in terms of CaO is less than 0.20% in terms of mass %, the amount of CaF2 is less than 0.50%, a chemical composition of the flux-cored wire is within a predetermined range, a Z value is 2.00% or less, a V value is 5.0 to 27.0, and Ceq is 0.30% to 1.00% or less.
Owner:NIPPON STEEL CORP
Flexible wearable mechanical sensor and manufacturing method thereof
InactiveCN108489646AExcellent measurable rangeImprove performanceFluid pressure measurement using ohmic-resistance variationForce measurementElectrical resistance and conductanceComposite film
The invention belongs to the field of flexible pressure sensors and particularly relates to a flexible wearable mechanical sensor and a manufacturing method thereof. A carbon nanotube / graphene composite film material for study on a supercapacitor and a battery is used for a stress sensor. Graphene fragments in the carbon nanotube / graphene composite film material are used for forming isolated island conductive regions, carbon nanotubes become bridges connecting the island graphene blocks, and an island bridge structure formed by the two forms a conductive channel between electrodes. Due to thestructural feature, the resistance model of the whole device changes a lot, and good resistance change feature is expressed. The strain coefficient of the flexible wearable mechanical sensor can reachas high as 190, the sensitivity is higher, a high measurable range is reached, a tensile range of 150% can be reached maximally, the device repeatability is strong, the process is simple, and the cost is low.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Resistive random access memory and manufacturing method thereof
PendingCN111312895AImprove consistencyGood resistive propertiesElectrical apparatusDigital storageFree energiesOxygen vacancy
The invention provides a resistive random access memory and a manufacturing method of the resistive random access memory. The resistive random access memory comprises a lower electrode, a lower intercalation layer, a resistive layer, an upper intercalation layer and an upper electrode, the upper intercalation layer is made of metal titanium, because the metal titanium (the upper intercalation layer) has high standard Gibbs free energy and stronger oxygen uptake capability, oxygen ions can be obtained, and the concentration of oxygen vacancies in the resistive random access layer is increased such that the generation of oxygen vacancy conductive filaments is facilitated, and the consistency of the resistive random access memory is improved. Furthermore, the lower intercalation layer is madeof tantalum nitride, the upper intercalation layer and the lower intercalation layer can play a role of a series resistor, and the resistive random access memory can have a better resistive random access characteristic under the combined action of the upper intercalation layer and the lower intercalation layer.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP
Organic electrode resistive random access memory and preparation method thereof
ActiveCN106601910AImprove performanceGood resistive propertiesElectrical apparatusSputteringStatic random-access memory
The invention discloses an organic electrode resistive random access memory. A PCBM organic electrode dielectric layer, a Zr<0.5>Hf<0.5>O<2> resistive conversion layer and an Ag electrode layer are formed on a substrate in turn. A preparation method of the resistive random access memory is also disclosed, comprising the following steps: cleaning and drying a substrate; spin-coating the substrate with PCBM solution and vacuum-drying the PCBM solution to form a PCBM organic electrode dielectric layer; growing a Zr<0.5>Hf<0.5>O<2> resistive conversion layer on the PCBM organic electrode dielectric layer through magnetron sputtering; and growing an Ag electrode layer on the Zr<0.5>Hf<0.5>O<2> resistive conversion layer. As a PCBM film is used as the organic electrode dielectric layer of the resistive random access memory, the resistive random access memory is different from a traditional memory prepared from oxide in that the resistive random access memory has a unique structure and good performance. Thus, the resistive random access memory has more stable storage performance, strong durability, and a wider application prospect.
Owner:HEBEI UNIVERSITY
All-carbon memristor and preparation method thereof
ActiveCN108682738AGood resistive propertiesReduce manufacturing costElectrical apparatusFiltrationGraphene
The invention discloses an all-carbon memristor comprising a substrate, a graphene bottom electrode layer, a graphene oxide intermediate dielectric layer and a graphene top electrode layer that are arranged successively from bottom to top. In addition the invention also discloses a preparation method. The method comprises: step one, preparing a graphene bottom electrode layer on a substrate by using a suction filtration method; step two, transferring a graphene oxide intermediate dielectric layer on the graphene bottom electrode layer by using a suction filtration method; and step three, transferring the graphene top electrode layer on the graphene oxide intermediate medium layer by using a suction filtration method. According to the invention, the all-carbon memristor is prepared by usingthe low temperature solution method, so that the cost of preparing the memristor is reduced substantially. The process is simple. The all-carbon memristor and the preparation method thereof are suitable for the large-scale industrial production.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Copper metaaluminate memristor based on flexible substrate and preparation method
The invention provides a copper metaaluminate memristor based on a flexible substrate. The memristor is sequentially provided with an upper electrode, a resistive layer, a lower electrode and a vertical four-layer structure of the flexible substrate from top to bottom. An upper electrode of the memristor is a copper film or a silver film; a resistive layer of the memristor is a copper metaaluminate film; and the lower electrode is an indium tin oxide transparent conductive film. The flexible substrate is polyethylene naphthalate or polyethylene glycol terephthalate mateiral. According to the flexible memristor based on the copper metaaluminate thin film, the preparation process is simple, the cost is low, and good resistance change characteristics can be obtained on the polymer flexible substrate. According to the memristor, the material system of the resistive layer of the memristor is widened, and the memristor is expected to be applied to the fields of flexible devices and wearableelectronic devices.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA
Fiber laser system
ActiveUS20170179678A1Improved resistance characteristicsImprove efficiencyCladded optical fibreLaser arrangementsNetwork structureErbium lasers
A fiber laser system enables an improved reflection resistance property. The fiber laser system includes fiber lasers (2 through 4) each having a laser medium which is an optical fiber made from silica glass. A difference between respective lasing wavelengths of any given two of the fiber lasers is greater than a wavelength equivalent to a half width at half maximum of a peak deriving from a vibration mode of a planar four-membered ring of a Si—O network structure of silica glass.
Owner:THE FUJIKURA CABLE WORKS LTD
Preparation method of single-layer nano-film memristor using LTCC green tape as substrate
ActiveCN105591028AGood resistive propertiesOmit the pre-firing stepElectrical apparatusNanoinformaticsGreen tapeOxygen ions
The invention discloses a preparation method of a single-layer nano-film memristor using an LTCC green tape as a substrate. According to the invention, cavities and ionized oxygen ions generated by the single-layer nano-film memristor under a bias voltage are utilized, the change principle of device resistance is realized dependent on the changes of the generation numbers of the cavities and the ionized oxygen ions, and from technology simplification and resistive film raw material formula improvement, the preparation method is characterized in that a pre-sintering step of the resistive film ceramic material is omitted, a ceramic raw material lower in sintering temperature is selected, and a lower sintering temperature is adopted; B site substitution is carried out by replacing Ti4+ with an X2+ part, so that the asymmetry of the molecule structure and the number of internal cavities of the resistive film are increased; in addition, a series of technical means is adopted, for example, film plating is carried out on the LTCC green tape to form a flexible lower electrode, the preparation technology is simplified, the production efficiency is improved, the production energy consumption and the manufacturing cost are lowered, and the memristive performance of the memristor is substantially improved.
Owner:SHANDONG UNIV OF SCI & TECH
Preparation method of carbon/nickel oxide resistive memory thin film
InactiveCN106340586ALow cost of preparationSimple processElectrical apparatusCarbon filmSmooth surface
The invention discloses a preparation method of a carbon / nickel oxide resistive memory thin film. The method includes the following steps that: a nickel oxide thin film is prepared; and a carbon film is prepared on the nickel oxide thin film, so that a carbon / nickel oxide composite thin film is prepared, top electrode preparation is performed on the carbon / nickel oxide composite thin film through using a sputtering apparatus, and the carbon / nickel oxide resistive memory thin film is obtained. According to the method of the invention, the carbon film and the nickel oxide thin film are composited, and therefore, compared with other materials having resistance variation characteristics, the carbon / nickel oxide composite thin film prepared by the preparation method of the invention has a smooth surface, and the preparation method has the advantages of low preparation cost, simple techniques and easiness in control, and can improve the preparation efficiency of the composite thin film, and the resistance variation performance of the carbon / nickel oxide composite thin film is significantly better than that of a single nickel oxide thin film.
Owner:XIAN UNIV OF TECH
RRAM device based on graphene oxide and preparation method of RRAM device
PendingCN109860390ALess investment in equipment and raw materialsRealize large-scale industrial applicationElectrical apparatusOxideGraphene
The invention discloses an RRAM device based on graphene oxide and a preparation method of the RRAM device, and belongs to the technical field of electronic devices. The RRAM device based on the graphene oxide comprises a conductive substrate, a dielectric layer and a top electrode layer, which are stacked from bottom to top. The top electrode layer comprises a plurality of top electrodes arrangedon the dielectric layer in an array mode, and a protective layer is arranged on the surfaces, away from the dielectric layer, of the top electrodes. The dielectric layer is manufactured through a solution method, the low-cost preparation of the RRAM device is realized, the equipment and raw material investment is less, and the large-scale industrial application can be realized.
Owner:XIAN JIAOTONG LIVERPOOL UNIV
Perovskite oxide thin-film device, preparation method thereof and application thereof
PendingCN110416409AReduce holesHigh high low resistance state valueElectrical apparatusHigh resistanceOptoelectronics
The invention relates to the technical field of electronic equipment and particularly relates to a perovskite oxide thin-film device, a preparation method thereof and application thereof. The perovskite oxide thin film device comprises a base layer, a bottom electrode layer, a PbZrO3 layer, a first top electrode and a second top electrode. The bottom electrode layer is disposed on a surface of thebase layer. The PbZrO3 layer is disposed on a surface of a side of the bottom electrode layer facing away from the base layer. The first top electrode is disposed on a surface of a side of the PbZrO3layer facing away from the bottom electrode layer. The second top electrode is disposed on a surface of a side of the bottom electrode layer facing away from the base layer. The purpose of the invention is to provide the perovskite oxide thin-film device with a high resistance switching ratio to improve the application range thereof.
Owner:GUANGDONG UNIV OF TECH
A memristor switch device based on a-TSC: O ceramic film and a preparation method thereof
A memristor switching device based on a-TSC: O ceramic film and a preparation method thereof belong to the technical field of photoelectric devices. On the basis of the traditional memristor switchingdevice structure, the invention innovatively proposes a dielectric layer structure of a TSC: O thin film / a SiOx thin film, which widens the selection range of the dielectric layer material of the memristor switching device. As the resistivity of the a-TSC: O film is adjustable in a wide range, and the a-SiOx thin films are transparent and can provide oxygen vacancy electromigration channels, thea-TSC: O films have good resistance and can be used as the dielectric layer of memristor switches. At the same time, due to intrinsic a-TSC ceramic thin film has excellent conductivity and near infrared transmittance, it can be used as top electrode material to construct near infrared transparent memristor switching device together with top electrode formed by transparent conductive thin film. Inaddition, the memristor switching device provided by the invention has the advantages of simple preparation process, low cost and high reliability, and is favorable for realizing large-scale production.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Resistance random access memory based on lead halide
ActiveCN107293643ANovel materialSimple ingredientsElectrical apparatusStatic random-access memoryRandom access memory
The present invention provides a resistance random access memory based on lead halide and a preparation method thereof. The specific structure of the memory is a sandwiched structure with the FTO, ITO, ZTO used as the substrate and bottom electrodes. The lead halide film serves as resistance layer; the Pt, Au, W serve as the top electrode. The invention adopts a new type of lead halide with resistance-changing function, which has the characteristics of simple composition, is easy to form a film and achieves stable chemical performance in the air. The resistance random access memory based on lead halide has the characteristics of high and low resistivity window, stable electrical performance, simple preparation process, low cost, safety and reliability, and poses no environmental pollution. Its storage window reaches the value 103 or more. With good cycle tolerance, it still has good resistance to change after repeated erases. The invention has good development potential and application value.
Owner:HUBEI UNIV
A resistive random access memory, and a preparation method and application thereof
InactiveCN109037440AExcellent resistive propertiesGood stabilityElectrical apparatusOxideRandom access
The invention relates to the technical field of semiconductors, in particular to a resistive random access memory, and a preparation method and application thereof. The invention discloses a resistiverandom access memory, comprising: a substrate, a bottom electrode, a first top electrode, a second top electrode and a double-perovskite oxide thin film; the bottom electrode is arranged on the surface of the substrate; the double-perovskite oxide thin film and the first top electrode are arranged on one side of the bottom electrode deviating from the substrate; the second top electrode is arranged on one side of the double-perovskite oxide thin film deviating from the bottom electrode; and the double-perovskite oxide film is selected from Bi2NiMnO6, Bi2Ni0.5Mn1.5O6 or Bi2Ni0.1Mn1.9O6 films.Compared with the existing resistive random access memories, the resistive random access memory provided by the invention using the double-perovskite oxide film as a dielectric layer can realize conversion between a high resisstance state and a low resistance state, an HRS / LRS value can reach 200, which exhibits an excellent resistance change characteristic, the resistive random access memory havegood stability, and the technical problems that the existing resistive random access memory has a poor resistance change effect and is easy to damaged are solved.
Owner:GUANGDONG UNIV OF TECH
Memristor switch device based on a-TSC:O ceramic film and preparation method thereof
ActiveCN108950507AWiden your optionsGood resistive propertiesVacuum evaporation coatingSputtering coatingElectrically conductiveTransmittance
The invention discloses a memristor switch device based on an a-TSC:O ceramic film and a preparation method thereof, and belongs to the technical field of photoelectric devices. An a-TSC:O film / a-TiOxfilm medium layer structure is innovatively proposed on the basis of a traditional memristor switch device structure, and the selection range of a memristor switch device medium layer material is widened. The resistance change properties of the a-TSC:O film can be adjusted in a wide range, the a-TiOx film is transparent and can provide oxygen vacancy electromigration channels, and therefore the a-TSC:O film has the good resistance change properties and can serve as a medium layer of a memristor switch device. Meanwhile, the a-TSC ceramic film has the very good electrical conductivity and near-infrared transmittance, therefore, the a-TSC ceramic film can serve as a top electrode material, and the a-TSC ceramic film and a top electrode formed by a transparent conductive film jointly form the near-infrared full-transparent memristor switch device. In addition, the invention provides a preparation technology of the memristor switch device. The preparation technology is simple, low in costand high in reliability, and large-scale production can be achieved.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA
Resistive random access memory doped with metal oxide and preparation method thereof
PendingCN110299448ALess investmentEasy to operateElectrical apparatusStatic random-access memoryRandom access memory
The invention discloses a resistive random access memory doped with a metal oxide and a preparation method thereof. The resistive random access memory comprises a top electrode layer, a resistive oxide layer and a substrate arranged from the top to bottom. The top electrode layer comprises several top electrodes set on the resistive oxide layer. The resistive oxide layer is a doped metal oxide layer. The preparation method includes the step of (a) cleaning a substrate, (b) preparing the resistive oxide layer, (c) preparing a top electrode layer, and (d) preparing a protective layer. The metaloxide layer and doped powder in the invention are all prepared by a solution method, the preparation of a low-cost RRAM is realized, compared with an RRAM device of a single-layer or double-layer puremetal oxide layer, the resistive characteristics of a doped RRAM device are better, equipment and raw material investment is small, and the large-scale industrial application can be achieved.
Owner:XIAN JIAOTONG LIVERPOOL UNIV
Preparation method of BaTiO3 micron fiber with resistance characteristic
ActiveCN107056280ASimple preparation processSave raw materialsAlkaline earth titanatesChemistryTube furnace
The invention relates to a preparation method of a BaTiO3 micron fiber with a resistance characteristic. An Si chip is selected and sequentially subjected to ultrasonic treatment with acetone, absolute ethanol and deionized water, Ba(CH3COO)2 powder is dissolved in a glacial acetic acid and ethylene glycol monomethyl ether mixed solution, a solution A is obtained after stirring, a Ti(OC4H9)4 solution is dissolved in an ethanol and lactic acid mixed solution, a solution B is obtained after stirring, PVP powder is dissolved in a mixed solution of A and B and stirred in a water bath at 80 DEG C, a solution C is obtained, BaTiO3 micron fiber is spun on the Si chip with a glass rod, and the fiber is annealed in a tubular furnace at 900 DEG C. The defects of low operation speed, high loss and short service life of traditional Flash memory are overcome. The process is simple, the fiber is synthesized in one step, raw materials are cheap, the synthesis quantity is large, and the fiber is flexible and convenient, has very high resistive switch ratio and has the good resistive switch characteristic under the control of voltage.
Owner:YANGZHOU UNIV
A memristive switch device based on a-tsc:o ceramic film and its preparation method
ActiveCN109065715BSimple preparation processLow costElectrical apparatusThin membraneDielectric layer
A memristive switch device based on a-TSC:O ceramic film and a preparation method thereof, belonging to the technical field of optoelectronic devices. Based on the structure of traditional memristive switch devices, the present invention innovatively proposes "a-TSC:O thin film / a-SiO x The dielectric layer structure of "thin film" broadens the selection range of dielectric layer materials for memristive switching devices. Since the resistance switching properties of a‑TSC:O thin films can be adjusted in a wide range, and a‑SiO x The film is transparent and can provide an oxygen-vacancy electromigration channel, so that the a-TSC:O film has good resistive switching properties and can be used as a dielectric layer of a memristive switch device. At the same time, since the intrinsic a-TSC ceramic film has very good electrical conductivity and near-infrared transmittance, it can also be used as a top electrode material, and a near-infrared fully transparent memristive switch can be constructed together with the top electrode formed by a transparent conductive film. device. In addition, the present invention proposes that the memristive switch device has a simple preparation process, low cost, and high reliability, which is beneficial to realize large-scale production.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
A silicon carbide thin film and resistive variable memory
ActiveCN105977379BIncrease defect concentrationGood resistive propertiesElectrical apparatusThin membraneSilicon oxide
Owner:ZHEJIANG NORMAL UNIVERSITY
A kind of zno/nio heterostructure ordered porous film and preparation method thereof
ActiveCN104465987BLarge specific surface areaPromote absorptionFinal product manufactureSuperimposed coating processUltraviolet detectorsSemiconductor materials
The invention belongs to the technical field of semiconductors and particularly relates to a ZnO / NiO heterostructure orderly multi-hole thin film and a manufacturing method thereof. A new option is provided for semiconductor materials. According to the technical scheme, the ZnO / NiO heterostructure orderly multi-hole thin film comprises a conducting substrate and a heterostructure growing on the conducting substrate, and the heterostructure is formed by a p type NiO orderly multi-hole thin film and an n type ZnO orderly multi-hole thin film which grows in sequence from bottom to top. The invention further provides a manufacturing method of the ZnO / NiO heterostructure orderly multi-hole thin film. The ZnO / NiO heterostructure orderly multi-hole thin film can be widely used in the fields such as an ultraviolet detector, a light-emitting diode and a resistance random access memory.
Owner:SOUTHWEST UNIV
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