The invention discloses a preparation method of a single-layer nano-film
memristor using an LTCC
green tape as a substrate. According to the invention, cavities and ionized
oxygen ions generated by the single-layer nano-film
memristor under a bias
voltage are utilized, the change principle of device resistance is realized dependent on the changes of the generation numbers of the cavities and the ionized
oxygen ions, and from technology simplification and resistive film
raw material formula improvement, the preparation method is characterized in that a pre-
sintering step of the resistive film
ceramic material is omitted, a
ceramic raw material lower in
sintering temperature is selected, and a lower
sintering temperature is adopted; B site substitution is carried out by replacing Ti4+ with an X2+ part, so that the
asymmetry of the molecule structure and the number of internal cavities of the resistive film are increased; in addition, a series of technical means is adopted, for example, film plating is carried out on the LTCC
green tape to form a flexible lower
electrode, the preparation technology is simplified, the production efficiency is improved, the production
energy consumption and the manufacturing cost are lowered, and the memristive performance of the
memristor is substantially improved.