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Resistance random access memory based on lead halide

A resistive memory, lead halide technology, applied in electrical components and other directions, can solve the problems of increasing power consumption and complexity of peripheral circuits, difficult to control the proportion of components, unclear application prospects, etc., to achieve high electrical stability, simple components, No effect of environmental pollution

Active Publication Date: 2017-10-24
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Binary oxides have the advantages of simple structure, easy control of material components, and compatibility between the preparation process and the semiconductor process, but generally require a large initial voltage to form a conductive channel in the resistive layer, which increases power consumption and the complexity of peripheral circuits. degree
The preparation process of ternary and multi-component oxide materials is relatively complicated, and the composition ratio is difficult to control and is not compatible with the current CMOS process. Therefore, research on resistive switching devices based on multi-component metal oxides is mostly carried out in laboratories. The application of such materials in the industrial field The future is not clear
Other inorganic materials are more common such as nitrides, amorphous carbon, and amorphous silicon, which also have problems such as complex processes and high preparation costs.

Method used

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  • Resistance random access memory based on lead halide
  • Resistance random access memory based on lead halide
  • Resistance random access memory based on lead halide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Step 1. Clean the substrate

[0038] Wash the FTO with deionized water, acetone, and absolute ethanol in an ultrasonic instrument for 30 minutes respectively;

[0039] Step 2. Reserve electrodes

[0040] Paste a 4mm wide insulating tape on one side of the FTO conductive layer, and then irradiate the FTO surface with ultraviolet light for 30 minutes in a UV cleaner;

[0041] Step 3. Prepare lead iodide solution

[0042]Dissolve 0.462g of lead iodide powder in 1ml of dimethylformamide, place it in a thermostat at 70°C for 12 hours to completely dissolve the lead iodide powder in the solvent, and then filter it with a 0.45μm filter head;

[0043] Step 4. Spin coating and drying

[0044] The lead iodide solution was spin-coated onto the FTO surface with a spin coater at a speed of 3000 r / min for 30 seconds. Dry at 70°C for 30 minutes;

[0045] Step 5. Prepare the top electrode

[0046] The substrate in step 4 is placed in a magnetron sputtering device, and a top elect...

Embodiment 2

[0050] Step 1. Clean the substrate

[0051] Wash the FTO with deionized water, acetone, and absolute ethanol in an ultrasonic instrument for 30 minutes respectively;

[0052] Step 2. Reserve electrodes

[0053] Paste a 4mm wide insulating tape on one side of the FTO conductive layer, and then irradiate the FTO surface with ultraviolet light for 30 minutes in a UV cleaner;

[0054] Step 3. Prepare lead bromide solution

[0055] Dissolve 0.367g of lead bromide powder in 1ml of dimethyl sulfoxide, place it in a thermostat at 70°C for 12 hours to completely dissolve the lead bromide powder in the solvent, and then filter it with a 0.45μm filter head;

[0056] Step 4. Spin coating and drying

[0057] Spin coat the lead bromide solution onto the FTO surface with a spin coater at a speed of 3000 r / min for 30 seconds. Dry at 70°C for 30 minutes;

[0058] Step 5. Prepare the top electrode

[0059] The substrate in step 4 is placed in a magnetron sputtering device, and a top elect...

Embodiment 3

[0063] Step 1. Clean the substrate

[0064] Wash the FTO with deionized water, acetone, and absolute ethanol in an ultrasonic instrument for 30 minutes respectively;

[0065] Step 2. Reserve electrodes

[0066] Paste a 4mm wide insulating tape on one side of the FTO conductive layer, and then irradiate the FTO surface with ultraviolet light for 30 minutes in a UV cleaner;

[0067] Step 3. Prepare lead chloride solution

[0068] Dissolve 0.278g of lead chloride powder in 1ml of dimethyl sulfoxide, place it in a thermostat at 70°C for 12 hours to completely dissolve the lead chloride powder in the solvent, and then filter with a 0.45μm filter head;

[0069] Step 4. Spin coating and drying

[0070] The lead chloride solution was spin-coated on the FTO surface with a spin coater at a speed of 3000r / min for 30 seconds. Dry at 70°C for 30 minutes;

[0071] Step 5. Prepare the top electrode

[0072] The substrate was placed in the magnetron sputtering equipment, and a top elect...

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Abstract

The present invention provides a resistance random access memory based on lead halide and a preparation method thereof. The specific structure of the memory is a sandwiched structure with the FTO, ITO, ZTO used as the substrate and bottom electrodes. The lead halide film serves as resistance layer; the Pt, Au, W serve as the top electrode. The invention adopts a new type of lead halide with resistance-changing function, which has the characteristics of simple composition, is easy to form a film and achieves stable chemical performance in the air. The resistance random access memory based on lead halide has the characteristics of high and low resistivity window, stable electrical performance, simple preparation process, low cost, safety and reliability, and poses no environmental pollution. Its storage window reaches the value 103 or more. With good cycle tolerance, it still has good resistance to change after repeated erases. The invention has good development potential and application value.

Description

technical field [0001] The invention belongs to the technical field of electronic materials and components, and relates to information storage technology, in particular to a lead halide-based resistive memory unit and a preparation method thereof. Background technique [0002] At present, the storage devices on the market mainly include magnetic memory and Flash memory, such as traditional computer hard disks, U disks, and solid-state hard disks. Resistive variable memory mainly refers to the realization of data storage by using two or more different resistance states exhibited by certain thin film materials under the action of an applied electric field. A new concept of non-volatile memory, which has the advantages of fast erasing and writing speed, high storage density, high repeated erasing and writing times, multi-value storage and three-dimensional storage. As a strong competitor of the next generation of non-volatile memory devices, it has broad market prospects. [...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/011
Inventor 王浩何玉立马国坤蔡恒梅
Owner HUBEI UNIV
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