Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memristor switch device based on a-TSC:O ceramic film and preparation method thereof

A technology of ceramic thin film and switching device, which is applied in the field of memristive switching device based on a-TSC:O ceramic thin film and its preparation, can solve problems such as research reports on applications in the field of optoelectronics that have not been seen, and achieve good near-infrared transmittance , good resistance performance, the effect of simple preparation process

Active Publication Date: 2018-12-07
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Based on the above content, we can see that the existing Ti 3 SiC 2 The development and research of applications mainly focus on high-temperature structural materials, electrode materials, machinable ceramic materials, anti-friction component materials and anti-corrosion protective layers, and there are no research reports on their application in the field of optoelectronics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memristor switch device based on a-TSC:O ceramic film and preparation method thereof
  • Memristor switch device based on a-TSC:O ceramic film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] This embodiment provides a memristive switching device, such as figure 1 As shown, the structure from bottom to top is "ITO glass 1, a-TiO x Film 2, a-TSC:O film 3, a-TSC film 4" vertical four-layer structure, "a-TiO x The film 2 / a-TSC:O film 3" double layer structure is used as the double resistance layer (that is, the dielectric layer of the memristive switching device).

[0032] This embodiment provides a method for manufacturing the above memristive switch device, and the manufacturing process includes the following steps:

[0033] Step A: Prepare the ITO glass slide 1 as a transparent substrate with a bottom electrode, and perform cleaning and drying treatments according to standard processes;

[0034] Step B: using a titanium target as a raw material target, oxygen and argon as working gases, and depositing a-TiOx film 2 on the ITO glass substrate 1 as the first resistive layer by reactive radio frequency sputtering;

[0035] Step C: Use Ti 3 SiC 2 Polycrystalline powder i...

Embodiment 2

[0052] This embodiment provides a method for manufacturing a memristive switch device, and the manufacturing process includes the following steps:

[0053] Step A: Prepare a K9 glass substrate as a transparent substrate, and perform cleaning and drying treatments according to standard processes; then deposit an ITO film on it as a bottom electrode;

[0054] Step B: Using a titanium target as a raw material target, oxygen and argon as working gases, and depositing a-TiOx film on the ITO film by reactive radio frequency sputtering as the first resistive layer;

[0055] Step C: Use Ti 3 SiC 2 Polycrystalline powder is used as the raw material target, oxygen and argon are used as working gases, and a-TSC:O film is deposited on the a-TiOx film by reactive radio frequency sputtering as the second resistive layer. The specific operations are as follows:

[0056] C1: Target preparation:

[0057] Will Ti 3 SiC 2 Add the powder to deionized water and stir evenly to obtain Ti 3 SiC 2 Dispersion, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a memristor switch device based on an a-TSC:O ceramic film and a preparation method thereof, and belongs to the technical field of photoelectric devices. An a-TSC:O film / a-TiOxfilm medium layer structure is innovatively proposed on the basis of a traditional memristor switch device structure, and the selection range of a memristor switch device medium layer material is widened. The resistance change properties of the a-TSC:O film can be adjusted in a wide range, the a-TiOx film is transparent and can provide oxygen vacancy electromigration channels, and therefore the a-TSC:O film has the good resistance change properties and can serve as a medium layer of a memristor switch device. Meanwhile, the a-TSC ceramic film has the very good electrical conductivity and near-infrared transmittance, therefore, the a-TSC ceramic film can serve as a top electrode material, and the a-TSC ceramic film and a top electrode formed by a transparent conductive film jointly form the near-infrared full-transparent memristor switch device. In addition, the invention provides a preparation technology of the memristor switch device. The preparation technology is simple, low in costand high in reliability, and large-scale production can be achieved.

Description

Technical field [0001] The invention belongs to the technical field of optoelectronic devices, and in particular relates to a memristive switch device based on a-TSC:O ceramic film and a preparation method thereof. Background technique [0002] As a new type of nonlinear device, memristors have received extensive attention from researchers. So far, Ag, Cu, Au, Pt and W have been used as electrode materials; a-Si, a-SiO x And TiO 2 Dielectric thin films are common resistive layer materials for memristive switching devices. In recent years, researchers at home and abroad have constructed and prepared a variety of memristive switching devices with excellent resistance switching functions based on various electrodes and resistive layer materials, making them the darling of next-generation storage technologies. [0003] Ti 3 SiC 2 It is a ternary layered carbide. It is the only MAX phase material containing Si. It has the properties of ceramics and metals. It can be referred to as TSC ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/08C23C14/06
CPCC23C14/0036C23C14/06C23C14/083C23C14/35
Inventor 宋宇浩次会聚陈奕丞刘诚李东阳李伟
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com