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Preparation method of carbon/nickel oxide resistive memory thin film

A technology of resistive memory and nickel oxide, applied in electrical components and other directions, can solve the problems of high erasing voltage, slow memory erasing and writing speed, etc., and achieve the effects of low preparation cost, easy control, and improved preparation efficiency

Inactive Publication Date: 2017-01-18
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing a carbon / nickel oxide resistance memory film, which solves the problems of slow erasing and writing speed and high erasing voltage of the existing memory

Method used

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  • Preparation method of carbon/nickel oxide resistive memory thin film
  • Preparation method of carbon/nickel oxide resistive memory thin film
  • Preparation method of carbon/nickel oxide resistive memory thin film

Examples

Experimental program
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Effect test

Embodiment 1

[0035] Step 1: Weigh nickel acetate, acetylacetone, acrylic acid and ethylene glycol methyl ether respectively according to the dosage ratio of 1:1:1:12. After mixing, nickel oxide sol is obtained; at room temperature, adopt dipping-pulling method, Use a pulling machine to pull the nickel oxide gel film on the Pt platinum electrode substrate, dry the nickel oxide gel film at room temperature, bake it at 60°C for 10min, and then bake it at 300°C Heat treatment at high temperature for 20 minutes, and then take it out and cool it down to room temperature naturally, so as to obtain the nickel oxide film on the Pt platinum electrode substrate.

[0036] Step 2: Preparation of carbon / nickel oxide composite film: Place the nickel oxide film obtained in step 1 on the support of the vacuum evaporation apparatus and fix it, then fix a carbon rope with a purity of 99%, a diameter of 2 mm, and a length of 1 cm on the carbon. On the evaporation source; turn on the power of the vacuum evapor...

Embodiment 2

[0040] Step 1: Weigh nickel acetate, acetylacetone, acrylic acid and ethylene glycol methyl ether respectively according to the dosage ratio of 1:1:1:12. After mixing, nickel oxide sol is obtained; at room temperature, adopt dipping-pulling method, Use a pulling machine to pull the nickel oxide gel film on the Pt platinum electrode substrate, dry the nickel oxide gel film at room temperature, bake it at 70°C for 13min, and then bake it at 500°C Heat treatment at high temperature for 25 minutes, and then take out and cool naturally to obtain a nickel oxide film on the Pt platinum electrode substrate.

[0041] Step 2: Preparation of carbon / nickel oxide composite film: Place the nickel oxide film obtained in step 1 on the support of the vacuum evaporation apparatus and fix it, then fix a carbon rope with a purity of 99%, a diameter of 2 mm, and a length of 1 cm on the carbon. On the evaporation source; turn on the power of the vacuum evaporation apparatus, adjust the current of t...

Embodiment 3

[0045] Step 1: Weigh nickel acetate, acetylacetone, acrylic acid and ethylene glycol methyl ether respectively according to the dosage ratio of 1:1:1:12. After mixing, nickel oxide sol is obtained; at room temperature, adopt dipping-pulling method, Use a pulling machine to pull the nickel oxide gel film on the Pt platinum electrode substrate, dry the nickel oxide gel film at room temperature, bake it at 80°C for 15min, and then bake it at 700°C Heat treatment at high temperature for 30 minutes, then take it out and cool it down to room temperature naturally to obtain a nickel oxide film on the Pt platinum electrode substrate.

[0046] Step 2: Preparation of carbon / nickel oxide composite film: Place the nickel oxide film obtained in step 1 on the support of the vacuum evaporation apparatus and fix it, then fix a carbon rope with a purity of 99%, a diameter of 2 mm, and a length of 1 cm on the carbon. On the evaporation source; turn on the power of the vacuum evaporation apparat...

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Abstract

The invention discloses a preparation method of a carbon / nickel oxide resistive memory thin film. The method includes the following steps that: a nickel oxide thin film is prepared; and a carbon film is prepared on the nickel oxide thin film, so that a carbon / nickel oxide composite thin film is prepared, top electrode preparation is performed on the carbon / nickel oxide composite thin film through using a sputtering apparatus, and the carbon / nickel oxide resistive memory thin film is obtained. According to the method of the invention, the carbon film and the nickel oxide thin film are composited, and therefore, compared with other materials having resistance variation characteristics, the carbon / nickel oxide composite thin film prepared by the preparation method of the invention has a smooth surface, and the preparation method has the advantages of low preparation cost, simple techniques and easiness in control, and can improve the preparation efficiency of the composite thin film, and the resistance variation performance of the carbon / nickel oxide composite thin film is significantly better than that of a single nickel oxide thin film.

Description

technical field [0001] The invention belongs to the technical field of resistive memory film materials of microelectronic materials, and in particular relates to a preparation method of a carbon / nickel oxide resistive memory film. Background technique [0002] With the improvement of people's living needs, whether it is a notebook computer, a mobile hard disk, a smart phone or a digital camera, etc., memory with excellent performance is required to ensure people's demand for data and information storage. At the same time, the complexity and volume of data lead to higher and higher requirements for data storage capacity, rewritable capacity and reading speed. Memory with low cost, low power consumption and high storage density will become the primary trend of future development. Non-volatile memory is mainly based on "flash memory" memory (FLASH). Due to its non-volatility, FLASH memory can save a lot of time and cost every time the device is restarted, so it is widely used....

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/8833H10N70/021H10N70/026
Inventor 李颖赵高扬杨志孟
Owner XIAN UNIV OF TECH
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