Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A resistive random access memory, and a preparation method and application thereof

A technology of resistive variable memory and bottom electrode, applied in the direction of electrical components, etc., can solve the problems of resistive variable memory, poor resistive effect, and resistive variable memory without high and low resistance states, etc., and achieve good stability and excellent resistance variable The effect of the characteristic

Inactive Publication Date: 2018-12-18
GUANGDONG UNIV OF TECH
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the present invention provides a resistive memory and its preparation method and application, which solves the technical problems that the existing resistive memory does not have obvious high and low resistance states, the resistive effect is poor, and the resistive memory is easily damaged.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A resistive random access memory, and a preparation method and application thereof
  • A resistive random access memory, and a preparation method and application thereof
  • A resistive random access memory, and a preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0059] 1. Mix nickel acetate, manganese acetate and bismuth nitrate with ethylene glycol to make 30ml. Stir at 60°C until the solution is completely dissolved, and prepare a double perovskite oxide (BNMO) precursor solution, which is placed in a volumetric flask for three days.

[0060] 2. After three days, place the cleaned FTO / Glass substrate on the tray of the homogenizer, and stick it on the tray with double-sided adhesive. Use a syringe to draw 5ml of the solution, and gently push the bottom of the syringe to add the solution drop by drop on the substrate until the solution overflows the surface and stop the dropwise addition.

[0061] 3. Adjust the low speed of the homogenizer to 1000r / min, and the duration is 60s; the high speed is 3500r / min, and the duration is 15s, then put the substrate into the glue drying machine, bake for 15 minutes, and set the temperature at 300°C.

[0062] 4. After 10 minutes, take out the substrate, and the film is BNMO / FTO / Glass at this time...

Embodiment 3

[0066] 1. Mix nickel acetate, manganese acetate and bismuth nitrate with ethylene glycol to make 30ml. Stir at 60°C until the solution is completely dissolved, and prepare the BNMO precursor solution, which is placed in a volumetric flask for three days.

[0067] 2. After three days, place the cleaned FTO / Glass substrate on the tray of the homogenizer, and stick it on the tray with double-sided adhesive. Use a syringe to draw 5ml of the solution, and gently push the bottom of the syringe to add the solution drop by drop on the substrate until the solution overflows the surface and stop the dropwise addition.

[0068] 3. Adjust the low speed of the homogenizer to 1000r / min, and the duration is 60s; the high speed is 3500r / min, and the duration is 60s, then put the substrate into the glue drying machine, bake for 10 minutes, and set the temperature at 300°C.

[0069] 4. After 10 minutes, take out the substrate, and the film is BNMO / FTO / Glass at this time. Repeat step 3 and ste...

Embodiment 4

[0073] 1. Mix nickel acetate, manganese acetate and bismuth nitrate with ethylene glycol to make 30ml. Stir at 60°C until the solution is completely dissolved, and prepare the BNMO precursor solution, which is placed in a volumetric flask for three days.

[0074] 2. After three days, place the cleaned FTO / Glass substrate on the tray of the homogenizer, and stick it on the tray with double-sided adhesive. Use a syringe to draw 5ml of the solution, and gently push the bottom of the syringe to add the solution drop by drop on the substrate until the solution overflows the surface and stop the dropwise addition.

[0075] 3. Adjust the low speed of the homogenizer to 1000r / min for 60s; the high speed to 3500r / min for 60s, then put the substrate into the glue drying machine and bake for 10 minutes at a temperature of 300°C.

[0076] 4. After 10 minutes, take out the substrate, and the film is BNMO / FTO / Glass at this time. Repeat step 3 and step 4 once to prepare a BNMO / FTO / Glass th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Electric currentaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of semiconductors, in particular to a resistive random access memory, and a preparation method and application thereof. The invention discloses a resistiverandom access memory, comprising: a substrate, a bottom electrode, a first top electrode, a second top electrode and a double-perovskite oxide thin film; the bottom electrode is arranged on the surface of the substrate; the double-perovskite oxide thin film and the first top electrode are arranged on one side of the bottom electrode deviating from the substrate; the second top electrode is arranged on one side of the double-perovskite oxide thin film deviating from the bottom electrode; and the double-perovskite oxide film is selected from Bi2NiMnO6, Bi2Ni0.5Mn1.5O6 or Bi2Ni0.1Mn1.9O6 films.Compared with the existing resistive random access memories, the resistive random access memory provided by the invention using the double-perovskite oxide film as a dielectric layer can realize conversion between a high resisstance state and a low resistance state, an HRS / LRS value can reach 200, which exhibits an excellent resistance change characteristic, the resistive random access memory havegood stability, and the technical problems that the existing resistive random access memory has a poor resistance change effect and is easy to damaged are solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a resistive variable memory and its preparation method and application. Background technique [0002] In recent years, driven by the gradual popularization of consumer electronics products such as smart phones and tablet computers and the continuous development of smart products based on Internet technology, the market needs for large-capacity, high-density, low-power and low-cost non-volatile memory The amount is getting bigger and bigger. In order to meet this requirement, semiconductor manufacturing technology continues to improve under the guidance of Moore's Law. However, in the process of continuous advancement of the semiconductor process, the non-volatile memory with a floating gate structure based on the charge storage mechanism encounters a serious technical bottleneck. [0003] Academia and industry have carried out in-depth research on the next generation of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/8836H10N70/011
Inventor 钟文敏刘秋香唐新桂曾思明
Owner GUANGDONG UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com