Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resistive random access memory and manufacturing method thereof

A technology of resistive variable memory and manufacturing method, applied in static memory, digital memory information, information storage, etc., can solve the problem of high randomness of oxygen vacancy conductive filaments, and achieve increased concentration, improved consistency, and strong oxygen absorption capacity Effect

Pending Publication Date: 2020-06-19
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a resistive variable memory and a manufacturing method of the resistive variable memory, so as to solve the problem of high randomness in the occurrence of oxygen vacancy conductive filaments in the resistive variable layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] The resistive memory and the manufacturing method of the resistive memory proposed by the present invention will be further described in detail below with reference to the drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structures. In particular, each drawing needs to display different emphases, and sometimes uses different scales.

[0040] The present invention provides a resistive variable memory, referring to Figure 9 , Figure 9 It is a schematic diagram of the resistive variable memory in the last step of the manufacturing method of the resistive variable memory according to th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a resistive random access memory and a manufacturing method of the resistive random access memory. The resistive random access memory comprises a lower electrode, a lower intercalation layer, a resistive layer, an upper intercalation layer and an upper electrode, the upper intercalation layer is made of metal titanium, because the metal titanium (the upper intercalation layer) has high standard Gibbs free energy and stronger oxygen uptake capability, oxygen ions can be obtained, and the concentration of oxygen vacancies in the resistive random access layer is increased such that the generation of oxygen vacancy conductive filaments is facilitated, and the consistency of the resistive random access memory is improved. Furthermore, the lower intercalation layer is madeof tantalum nitride, the upper intercalation layer and the lower intercalation layer can play a role of a series resistor, and the resistive random access memory can have a better resistive random access characteristic under the combined action of the upper intercalation layer and the lower intercalation layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a resistive variable memory and a method for manufacturing the resistive variable memory. Background technique [0002] In recent years, with the rapid development of portable electronic products such as smartphones and tablet computers, the market for non-volatile memory is growing. Among them, Flash memory has become the current non-volatile memory due to its high storage density and fast operation speed. The mainstream product of sexual memory. However, due to the structural limitations of Flash memory, it will soon reach its size limit in the near future. At the same time, Flash has disadvantages such as high operating voltage and poor durability, making it increasingly difficult to meet the needs of technological development. Therefore, the development of new memory is a research hotspot in the field of memory at present. Among various new types of memo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C13/00
CPCG11C13/0002H10N70/801H10N70/011
Inventor 田伟思邹荣官郭沁王奇伟陈昊瑜
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com