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Silicon oxycarbide film and RRAM (resistive random access memory)

A technology of resistive memory and silicon oxycarbide, applied in electrical components and other directions, can solve the problems of unreported resistive memory of silicon oxycarbide, potential safety hazards, etc., and achieve the effects of optimizing resistive characteristics, reducing consumption, and simplifying design

Active Publication Date: 2016-09-28
ZHEJIANG NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, SiH 4 As a highly toxic and explosive gas, although it is an essential raw material for the preparation of silicon-based thin films by CVD, there are great potential safety hazards.
[0004] According to the search, there is no report on the resistive memory based on silicon oxycarbide prepared by magnetron sputtering.

Method used

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  • Silicon oxycarbide film and RRAM (resistive random access memory)
  • Silicon oxycarbide film and RRAM (resistive random access memory)
  • Silicon oxycarbide film and RRAM (resistive random access memory)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment one: device preparation

[0020] The schematic diagram of the cross-sectional structure of the resistive memory of the present invention is as follows: figure 1 As shown, the preparation process of the resistive variable memory of this example is described below in conjunction with the schematic cross-sectional structure.

[0021] 1. First, P-type heavily doped silicon wafers with a thickness of 500 μm (resistivity less than ) is cleaned using the RCA standard cleaning method in the IC process.

[0022] 2. Using radio frequency magnetron reactive sputtering 4H-SiC target with a purity of 99.5%, a resistive dielectric layer SiC with a thickness of about 20nm was prepared at room temperature x o y , where x=1.21, y=1.45. Parameters: background vacuum -4 , working pressure=0.5Pa, argon flow=30sccm, RF frequency=13.56MHz, RF power=100W, growth time=10min.

[0023] 3. Define the shape and size of the top electrode (a circle with a diameter of 1 mm) using a m...

Embodiment 2

[0026] Embodiment 2: Device detection

[0027] This embodiment tests the resistive switching characteristics of the resistive memory made in Example 1, and the test results are as follows figure 2 , image 3 and Figure 4 as shown, image 3 Among them, the abscissa represents the number of erasing and writing, the ordinate represents the resistance, the unit is ohm, 5 represents the high-resistance state curve, and 6 represents the low-resistance state curve; Figure 4 , the abscissa represents the retention time, in seconds, the ordinate represents the resistance, in ohms, 5 represents the high-resistance state curve, and 6 represents the low-resistance state curve.

[0028] Depend on figure 2 It can be seen that with the cycle of DC scanning voltage, the device Ag / SiC 1.21 o 1.45 / p + -The resistance of Si will change from high resistance state to low resistance state, reflecting the storage of data 0 and 1.

[0029] Depend on image 3 and Figure 4 It can be see...

Embodiment 3

[0030] Embodiment three: device preparation

[0031] This example uses the same method as Example 1 to prepare a resistive variable memory, and the prepared device has the same structure as Example 1, the difference is that the flow rate of argon gas is 29.9 sccm, and the flow rate of oxygen gas is 0.1 sccm, so that the resistance of this example is Variable dielectric layer SiC x o y x:y=0.72:1.76. The resistive switching characteristic test described in the second embodiment is carried out on the prepared device, and it is found that the device can well meet the requirement.

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Abstract

The invention provides a silicon oxycarbide film and an RRAM (resistive random access memory). The molecular formula of a silicon oxycarbide film resistive material is SiCxOy, wherein x is from 1.21 to 0.21, y is from 1.45 to 2.01, and x and y are in negative correlation. The thickness of the film is 50nm or less. The RRAM comprises a top electrode, a resistive dielectric layer, a substrate and a back electrode, and is characterized in that the resistive dielectric layer is the silicon oxycarbide film. The top electrode is made of Ag and Al. The RRAM is prepared by a material compatible with the COMS technology, and physical deposition film equipment is mainly used in a preparation process. No high-temperature technology is employed, and the consumption of energy is reduced. Silicon oxycarbide films with different defect concentrations can be obtained through the control of gas proportion. For an SiC0.202.01 material, the switch ratio reaches 500, and can completely meet the actual demands (the switch ratio is greater than 10). Meanwhile, the RRAM based on the silicon oxycarbide material has a self-rectification effect, thereby simplifying the design of an external circuit.

Description

technical field [0001] The invention belongs to the technical field of ultra-large-scale integrated circuits, and in particular relates to a silicon oxycarbide thin film with stable resistive switching characteristics, and a resistive variable memory using the thin film. Background technique [0002] As people continue to put forward requirements on the storage capacity, speed, power consumption, reliability and other performance of non-volatile memory, the FLASH memory based on the traditional floating gate structure is facing a huge challenge because the size cannot be further reduced. A typical resistive memory has a simple "sandwich structure" - a resistive layer is sandwiched between two layers of metal electrodes. As the applied voltage changes, the resistive memory can switch between a high-resistance state and a low-resistance state. , and then achieve the purpose of data 0 and 1 storage. Due to the characteristics of simple structure, high storage density, fast rea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/883H10N70/026
Inventor 黄仕华陈达
Owner ZHEJIANG NORMAL UNIVERSITY
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