Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Based on (gay) 2 o 3 Amorphous thin film high-gain solar-blind ultraviolet light detector and its preparation method

An amorphous thin-film, high-gain technology, used in photovoltaic power generation, semiconductor devices, final product manufacturing, etc., can solve problems such as reduced device performance and stability, crystal quality degradation, etc., to reduce dark current, improve responsiveness, and improve The effect of detection ability

Active Publication Date: 2020-07-10
HUBEI UNIV +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to realize the detection of solar-blind ultraviolet light, the band gap of the active layer semiconductor material must be greater than 4.4eV, while MgZnO and AlGaN increase the band gap to 4.4eV by increasing the Mg and Al content respectively, which will make the crystal quality significantly decline, will greatly reduce the performance and stability of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Based on (gay) <sub>2</sub> o <sub>3</sub> Amorphous thin film high-gain solar-blind ultraviolet light detector and its preparation method
  • Based on (gay) <sub>2</sub> o <sub>3</sub> Amorphous thin film high-gain solar-blind ultraviolet light detector and its preparation method
  • Based on (gay) <sub>2</sub> o <sub>3</sub> Amorphous thin film high-gain solar-blind ultraviolet light detector and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Such as figure 1 As shown, a (GaY) based 2 o 3 A high-gain solar-blind ultraviolet light detector of an amorphous film, the detector includes a c-plane sapphire substrate, an active layer, and a pair of parallel metal Au electrodes from bottom to top, wherein: the active layer is amorphous ( GaY) 2 o 3 film. The thickness of the substrate is 0.43 mm, the thickness of the active layer is 150 nm, the thickness of the Au electrodes is 50 nm, and the distance between the parallel electrodes is 10 μm.

[0047] The above-mentioned (GaY) based 2 o 3 The high-gain solar-blind ultraviolet light detector of the amorphous film is prepared by the following method, including the following steps:

[0048] Step 1: Preparation of (GaY) by solid phase sintering method 2 o 3 Ternary ceramic target

[0049] 1.1 molar ratio Ga 2 o 3 : Y 2 o 3 =70:30, weigh 6.595g Ga 2 o 3 powder and 3.401gY 2 o 3 Powder, after mixing, add 15g of deionized water, then place in the ball mil...

Embodiment 2

[0059] A (GaY) based 2 o 3 A sun-blind ultraviolet light detector of a ternary alloy, the detector includes a c-plane sapphire substrate, an active layer, and a pair of parallel metal Au electrodes from bottom to top, wherein: the active layer is (GaY) 2 o 3 Thin film, the thickness of the substrate is 0.43mm, the thickness of the active layer is 150nm, the thickness of the electrodes is 55nm, and the distance between the parallel electrodes is 10μm.

[0060] The above-mentioned (GaY) based 2 o 3 The thin-film sun-blind ultraviolet light detector is prepared by the following method, including the following steps:

[0061] Step 1: Preparation of (GaY) by solid phase sintering method 2 o 3 Ternary ceramic target

[0062] 1.1 molar ratio Ga 2 o 3 : Y 2 o 3 =95:5, weigh 9.403g Ga 2 o 3 powder and 0.596g Y 2 o 3 Powder, after mixing, add 15g of deionized water, then place in the ball mill jar (the ball milling medium is zirconia ceramic balls) in the planetary ball m...

Embodiment 3

[0071] A (GaY) based 2 o 3 A sun-blind ultraviolet light detector of a ternary alloy, the detector includes a c-plane sapphire substrate, an active layer, and a pair of parallel metal Al electrodes from bottom to top, wherein: the active layer is (GaY) 2 o 3 For the ternary alloy thin film, the thickness of the substrate is 0.43mm, the thickness of the active layer is 300nm, the thickness of the electrodes is 30nm, and the distance between the parallel electrodes is 50μm.

[0072] The above-mentioned (GaY) based 2 o 3 The thin-film sun-blind ultraviolet light detector is prepared by the following method, including the following steps:

[0073] Step 1: Prepare (GaY) by the same solid phase sintering method as in Example 1 2 o 3 Ternary ceramic target.

[0074] Step 2: Utilize (GaY) 2 o 3 Preparation of solar-blind ultraviolet light detectors with ternary ceramic targets

[0075] 2.1 (GaY) prepared in step 1 2 o 3 Ternary ceramics are used as laser ablation targets, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-gain solar blind ultraviolet light detector based on a (GaY)2O3 amorphous film and a preparation method of the high-gain solar blind ultraviolet light detector. The detector sequentially comprises a c-plane sapphire, an active layer and a pair of parallel electrodes from bottom to top, wherein the active layer is the amorphous (GaY)2O3 film. According to the invention, Y3+ ions are used for partially replacing Ga3+ ions in Ga2O3, so that the band gap of Ga2O3 is increased, and the thin film is converted into amorphous from single crystal. The amorphous (GaY)2O3 film with a higher band gap can effectively reduce the dark current of the device, and enables the cut-off wavelength to be blue-shifted to be within 280nm. Meanwhile, the amorphous (GaY)2O3 film has higher defect concentration, and the defects not only can improve the gain, but also can be used as a recombination center to promote carrier recombination, so that compared with a pure Ga2O3 device, an amorphous (GaY)2O3 device has the advantages that the responsivity is obviously improved, the relaxation time is obviously shortened, and the detection capability on deep ultraviolet light is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor detectors, and in particular relates to a solar-blind ultraviolet light detector with an MSM structure. More specifically, the invention relates to a (GaY) 2 o 3 High-gain solar-blind ultraviolet light detector of amorphous film and its preparation method. Background technique [0002] Since the deep ultraviolet part (200-280nm) in sunlight will be strongly absorbed by the ozone layer before reaching the earth's surface, the solar-blind ultraviolet photodetector has the characteristics of strong anti-interference ability and high sensitivity when working on the earth's surface. It has very important applications in military and people's livelihood fields such as missile early warning, ultraviolet communication, fire prevention and control, and environmental monitoring. The traditional vacuum ultraviolet photomultiplier tube detector has high power consumption and high price. The sun-blind ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/0376H01L31/0392H01L31/09H01L31/18
CPCH01L31/0321H01L31/0376H01L31/0392H01L31/095H01L31/18Y02E10/50Y02P70/50
Inventor 何云斌王其乐黎明锴黄攀卢寅梅常钢李派张清风陈俊年
Owner HUBEI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com