Thin film transistor, preparation method of thin film transistor and liquid crystal display panel

Abstract

The invention provides a thin film transistor. The thin film transistor comprises a substrate, a patterned source electrode and a patterned common electrode are deposited on the substrate, and a liner layer covers the source electrode and the common electrode. The side, away from the common electrode, of the source electrode is exposed outside the liner layer to form an exposed part, a drain electrode is deposited on the liner layer and patterned to form a pixel electrode, and the pixel electrode is located on the side of the source electrode. A patterned semiconductor layer, a grid electrode insulation layer and a patterned grid electrode are sequentially deposited on the exposed part and on the side, located on the source electrode, of the substrate respectively so as to form a semiconductor channel with a section of a stepped structure, and the pixel electrode is connected with the source electrode through the semiconductor layer. The invention further provides a preparation method of the thin film transistor and a liquid crystal display panel. Compared with the prior art, the on-off ratio of the thin film transistor is improved, and the aperture opening ratio is also improved. The thin film transistor can be used on a high-resolution panel; the technology process is shortened, and the cost is saved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor based on an IPS structure, a manufacturing method thereof, and a liquid crystal panel. Background technique [0002] At present, most semiconductor channels of TFT devices in TFT (thin film transistor) array substrates adopt two-dimensional planar structures, and the length of the channels will be relatively long, thereby limiting the switching ratio of TFT devices; the size of TFT devices in TFT array substrates It will be made relatively large, resulting in a reduction in the aperture ratio; in the TFT manufacturing process, it is necessary to use multiple masks (generally at least 5 masks), the process is cumbersome and the cost is high. All of these restrict the development of TFT array substrates. Contents of the invention [0003] In order to overcome the deficiencies of the prior art, the invention provides a thin film transistor and its manufact...

AI Technical Summary

Problems solved by technology

[0002] At present, most semiconductor channels of TFT devices in TFT (thin film transistor) array substrates adopt two-dimensional planar structures, and the length of the channels will be relatively long, thereby limiting the switching ratio of TFT devices; the size of TFT devices in TFT array substrates It will be made relatively large, resulting in a reduction in the aperture ratio; in the TFT manufacturing process, multiple masks (generally at least 5 masks) are required, the process is cumbersome and the cost is high

These all restrict the development of TFT array substrates

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