Environment-friendly Zn-Sb phase change storage thin-film material and manufacturing method thereof
An environment-friendly, thin-film material technology, applied in the direction of electrical components, etc., can solve the problems of short data storage time, easy phase separation, high melting point temperature, etc., and achieve the effect of solving thermal crosstalk, good CMOS process compatibility, and high crystallization temperature
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Embodiment 1
[0035] An environment-friendly Zn-Sb thin film material for phase change memory of the present invention is composed of zinc and antimony two elements to form a binary system, and its general chemical structure is Zn x Sb 100-x (0<x<60), the specific preparation method is as follows:
[0036] 1. In the magnetron sputtering coating system (JGP-450 type), the antimony or zinc single target is installed in the magnetron direct current (DC) sputtering target, and the ZnSb target is installed in the magnetron radio frequency (RF) sputtering target In the shooting target, a quartz sheet or a silicon oxide sheet is used as the substrate, and the sputtering chamber of the magnetron sputtering coating system is vacuumed until the vacuum degree in the chamber reaches 2.0×10 -4 Pa, then, pass high-purity argon gas with a volume flow rate of 50ml / min (SCCM standard condition milliliter per minute) into the sputtering chamber until the pressure in the sputtering chamber reaches 0.35Pa req...
Embodiment 2
[0039] With the above-mentioned implementation example 1, the difference is that the sputtering power of the elemental antimony target in the thin film preparation process is controlled at 40W, and the sputtering power of the alloy ZnSb target is controlled at 50W, both to obtain Zn 20.3 Sb 79.7 Phase change film materials.
Embodiment 3
[0041] Same as the above implementation example 1, the difference is that the sputtering power of the elemental antimony target in the film preparation process is controlled at 30W, and the sputtering power of the alloy ZnSb target is controlled at 50W, so that Zn 21.9 Sb 78.1 Phase change film materials.
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