The invention provides a CMOS (Complementary Metal-Oxide Semiconductor) band-gap reference voltage generation circuit for output of the reference voltage, comprising a first CMOS, a second CMOS, a third CMOS, a first triode, a second triode, an amplifier and a fourth CMOS. The base electrode of the fourth CMOS is connected with the output end of the amplifier, the source electrode of the fourth CMOS is connected with the source electrodes of the first CMOS, the second CMOS and the third CMOS, the base electrode and the connecting electrode of the third triode are grounded. The emitting electrode of the third triode is connected with the drain electrode of the fourth CMOS. The CMOS band-gap reference voltage generation circuit, by adding a branch and a plurality of resistors, eliminates the second-order temperature modulation effect of the triode in the original circuit effectively and improves the stability of the band-gap reference voltage generation circuit.