Growth method for improving quality of aluminum nitride film crystal by temperature modulation

A thin-film crystal and growth method technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of low lateral growth rate, large consumption of reactant, polycrystalline growth of epitaxial layer, etc. The method is simple and easy effect of reducing dislocation density and improving crystal quality

Active Publication Date: 2015-05-06
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Abstract
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  • Application Information

AI Technical Summary

Benefits of technology

This technology helps reduce defects caused by misalignment between layers during manufacturing processes that use nitride semiconductors such as gallium arsenide (GaAs). By introducing this interlayer with specific chemical compositions or physical conditions, it becomes possible to prevent these issues from happening at all levels of production efficiency while maintaining excellent device performance characteristics like reduced leakage current and improved heat dissipation capabilities.

Problems solved by technology

This patents describes methods for creating highly pure alpha -nitrogen monocarbide (α-NGa2) at room temperatures or near infra red wavelengths. These techniques involve controllably heating certain elements called group III metathetically dressed compounds containing specific metal cations like copper(II)). By doing this, these elemental structures become more stable than previously known ones due to their small size and lack of defects during manufacturing processes. Additionally, when making optical components, quantum well type transistors, microwave amplifiers, and other electronic device technologies, α-ΝGa1/β_III , which includes many alloys made from different types of tungsten and tantalum, can be useful substances for use in various fields including photonics.

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  • Growth method for improving quality of aluminum nitride film crystal by temperature modulation

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Embodiment 1

[0015] A growth method for improving the crystal quality of an aluminum nitride thin film by using temperature modulation, comprising the following steps:

[0016] (1) Use metal-organic chemical vapor deposition (MOCVD) equipment, the substrate is a (0001) surface sapphire substrate 10, and hydrogen gas is introduced as a carrier gas, and the substrate is placed in a metal-organic chemical vapor deposition system and heated at a high temperature of 1050 ℃, high pressure 100torr and heating and baking for 3min to clean the surface of the substrate;

[0017] (2) Introduce hydrogen as a carrier gas, reduce the temperature to 950°C, and the pressure is 50torr. Introduce ammonia gas with a flow rate of 300 sccm, and simultaneously inject trimethylaluminum with a flow rate of 100 sccm. Epitaxial growth on the substrate at low temperature Aluminum nitride nucleation layer 20; the thickness of the aluminum nitride nucleation layer is 20nm;

[0018] (3) Introduce hydrogen as a carrier...

Embodiment 2

[0021] A growth method for improving the crystal quality of an aluminum nitride thin film by using temperature modulation, comprising the following steps:

[0022] (1) Use metal-organic chemical vapor deposition (MOCVD) equipment, the substrate is a (0001) sapphire substrate 10, and hydrogen gas is introduced as a carrier gas, and the substrate is placed in a metal-organic chemical vapor deposition system and heated at a high temperature of 1500 ℃, high pressure 150torr, heating and baking for 4min to clean the surface of the substrate;

[0023] (2) Introduce hydrogen as a carrier gas, reduce the temperature to 900°C, and the pressure is 75 torr. Introduce ammonia gas with a flow rate of 600 sccm, and simultaneously inject trimethylaluminum with a flow rate of 125 sccm. Epitaxial growth on the substrate at low temperature Aluminum nitride nucleation layer 20; the thickness of the aluminum nitride nucleation layer is 25nm;

[0024] (3) Introduce hydrogen as a carrier gas, keep...

Embodiment 3

[0027] A growth method that uses temperature modulation to improve the crystal quality of aluminum nitride films (such as figure 1 shown), including the following steps:

[0028] (1) Metal-organic chemical vapor deposition (MOCVD) equipment is used, the substrate is a (0001) sapphire substrate 10, hydrogen is introduced as a carrier gas, the substrate is placed in a metal-organic chemical vapor deposition system, and heated at a high temperature of 1100 ℃, high pressure 200torr heating and baking for 5min, clean the substrate surface;

[0029] (2) Introduce hydrogen as a carrier gas, reduce the temperature to 950°C, and the pressure is 100 torr. Introduce ammonia gas with a flow rate of 1000 sccm, and simultaneously inject trimethylaluminum with a flow rate of 150 sccm. Epitaxial growth on the substrate at low temperature Aluminum nitride nucleation layer 20; the thickness of the aluminum nitride nucleation layer is 30nm;

[0030] (3) Introduce hydrogen as a carrier gas, kee...

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Abstract

The invention discloses a growth method for improving quality of aluminum nitride film crystal by temperature modulation. The growth is carried out in MOCVD equipment and comprises four stages of baking, nucleation, temperature-modulation epitaxial growth and secondary epitaxial growth again. Through an in-situ temperature modulation technology, the growth speed and stress of aluminum nitride are changed by modulating a growth temperature in the epitaxial growth process after an aluminum nitride nucleating layer grows, so that partial dislocation is bent; finally annihilation caused by combination is generated; the dislocation density in an aluminum nitride film is reduced; and the crystal quality is improved. The growth method has the advantages that the method for introducing a temperature modulation layer in the epitaxial growth process of the aluminum nitride material is simple and feasible; the epitaxial material is good in property; and the growth is an effective solving scheme for achieving high-quality epitaxial growth of the aluminum nitride film.

Description

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Claims

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Application Information

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Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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