Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of three-leg catalytic micro gas sensor with temperature modulation

A gas sensor and manufacturing method technology, applied in the direction of manufacturing microstructure devices, microstructure technology, gaseous chemical plating, etc., can solve the problem of poor matching between sensitive resistors and compensation resistors, inconsistent resistance values ​​of winding coils, and zero output of sensors big difference

Inactive Publication Date: 2011-06-22
NO 49 INST CHINESE ELECTRONICS SCI & TECH GRP
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the following problems in traditional catalytic sensors: (1) manual coil winding, making sensitive heating resistors and compensation resistors, resulting in inconsistencies in the resistance values ​​of the winding coils, making the matching of the sensitive resistors and compensation resistors poor, The sensor zero point output has a large difference

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of three-leg catalytic micro gas sensor with temperature modulation
  • Manufacturing method of three-leg catalytic micro gas sensor with temperature modulation
  • Manufacturing method of three-leg catalytic micro gas sensor with temperature modulation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] refer to figure 1 , showing the process flow chart of the preparation process of the three-arm catalytic micro-gas sensor with temperature modulation. The process consists of the following process steps: silicon wafer cleaning-silicon wafer oxidation-silicon nitride deposition-aluminum oxide deposition-platinum film deposition - Backside mask lithography replication pattern - backside wet etching - cleaning - front mask lithography replication pattern - front ion beam etching - front mask lithography replication pattern - wet etching - cleaning - electrode goldization - chip separation - gold wire ball bonding lead - coating catalyst carrier - sintering - coating catalyst - coating desensitizer - heat treatment - assembly - packaging. The manufacturing methods between the various working steps can be combined arbitrarily according to specific requirements.

[0024] The specific implementation is as follows:

[0025] a. After performing dry (or wet) oxidation on the po...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Resistanceaaaaaaaaaa
Resistanceaaaaaaaaaa
Login to View More

Abstract

The invention provides a micromachining and manufacturing method of a gas sensor with temperature modulation. After a single crystal silicon wafer is subjected to dry oxidation by adopting an IC (Integrated Circuit) process, a silicon nitride dielectric isolation layer and an aluminum oxide dielectric isolation layer are deposited, and a platinum film is deposited by utilizing a sputtering process; patterns are copied on the other side of the single crystal silicon wafer, and a silicon cup is micromachined; a mask is subjected to photoetching and the platinum film is etched by using ion beams to form a gas sensitive unit, a gas compensation unit and a temperature sensitive unit resistor; the mask is subjected to photoetching, and an aluminum oxide layer, a silicon nitride layer, a silicon oxide layer and single crystal silicon are subjected to wet etching in sequence to form a plurality of three-leg chip units; internal leads are welded; aluminum oxide catalytic carrier slurry is coated and sintered; and a catalyst and a desensitizer are coated and subjected to thermal treatment at high temperature to form a gas sensitive chip. The method settles the problems which are present in a catalytic gas sensor owing to manual operation, realizes the integration of a plurality of sensitive units of the sensor, raises the consistency, the reliability and the detection precision of the sensor, and lowers the power consumption.

Description

(1) Technical field [0001] The invention belongs to the field of sensor manufacturing, in particular to a method for manufacturing a three-arm catalytic micro-gas sensor with temperature modulation. (2) Background technology [0002] Catalytic combustion gas sensor is a family of flammable gas sensors with excellent performance and the most widely used type of sensor. Traditional catalytic combustion sensors have the following problems, which affect their performance and applications. (1) Manual winding of the coil, making sensitive heating resistors and compensation resistors, resulting in inconsistent resistance values ​​of the wound coils, resulting in poor matching between the sensitive resistors and compensation resistors, and large differences in the zero output of the sensor. (2) The traditional catalytic combustion sensor can only be operated manually, which is difficult to produce in batches and has poor interchangeability. (3) The power consumption is large, and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N27/16B81C1/00
Inventor 张洪泉姜国光任宪伍齐红齐欣王震金建东周明军秦雪秦永和
Owner NO 49 INST CHINESE ELECTRONICS SCI & TECH GRP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products