A method of producing high-quality and large-
diameter single crystals by the
Czochralski method is disclosed which can provide wafers with a minimized number of such grown-in defects as
dislocation clusters and
laser scattering
tomography defects. Specifically, it is a method of producing
silicon single crystals which comprises carrying out the
crystal pulling while maintaining the
solid-melt interface during pulling in the shape of an upward convex with the central portion of the interface being higher by at least 5 mm than the
peripheral region thereof and while applying a
magnetic field, and optionally in addition to the above, while maintaining the
temperature gradient in the direction of axis of pulling in the
peripheral region at a level lower than that in the central portion in the range of from the
melting point to 1,200° C. In this case, it is desirable that the portion of the
single crystal surface
lying at least 50 mm above the melt surface be shielded from direct
radiant heat from the heater and / or
crucible wall, that a horizontal
magnetic field of 0.08 to 0.3 T be applied in parallel with the melt surface or a cusped
magnetic field showing an intensity of 0.02 to 0.07 T at a
crucible wall site on the melt surface be applied and that the
crucible be rotated at a speed of not more than 5 min-1 and the
single crystal at a speed of not less than 13 min-1.