108results about How to "High processing temperature" patented technology

An electronic device module comprising:A. At least one electronic device, e.g., a solar cell, andB. A polymeric material in intimate contact with at least one surface of the electronic device, the polymeric material comprising (1) an ethylene-based polymer composition characterized by a Comonomer Distribution Constant greater than about 45, more preferably greater than 50, most preferably greater than 95, and as high as 400, preferably as high as 200, wherein the composition has less than 120 total unsaturation unit / 1,000,000C, preferably the ethylene-based polymer compositions comprise up to about 3 long chain branches / 1000 carbons, more preferably from about 0.01 to about 3 long chain branches / 1000 carbons; the ethylene-based polymer composition can have a ZSVR of at least 2; the ethylene-based polymer compositions can be further characterized by comprising less than 20 vinylidene unsaturation unit / 1,000,000C; the ethylene-based polymer compositions can have a bimodal molecular weight distribution (MWD) or a multi-modal MWD; the ethylene-based polymer compositions can have a comonomer distribution profile comprising a mono or bimodal distribution from 35° C. to 120° C., excluding purge; the ethylene-based polymer compositions can comprise a single DSC melting peak; the ethylene-based polymer compositions can comprise a weight average molecular weight (Mw) from about 17,000 to about 220,000, (2) optionally, a vinyl silane, (3) optionally, a free radical initiator, e.g., a peroxide or azo compound, or a photoinitiator, e.g., benzophenone, and (4) optionally, a co-agent.

A method for making a multilayered electronic device with at least one epitaxial layer grown on a single-crystal film bonded to a composite wherein at least one layer is polycrystalline, the method includes the step of bonding a single-crystal film at least one of the epitaxial layers on the single-crystal film wherein thermal coefficients of expansion for the substrate and the epitaxial layer are closely matched.

The invention provides a method of making a material, said method comprising generating a foamed hydrophilic polymer solution, especially of a gelatin or derivative thereof, and treating said foamed hydrophilic polymer solution with sufficient energy and for a sufficiently short time that a polymer foam having an open-cell structure is formed. The invention also provides a material comprising a support and an ink receiving layer supported on the support, the ink receiving layer comprising porous hydrophilic polymer, especially gelatin, and is formed by coating a solution of foamed hydrophilic polymer, especially gelatin, onto a support substrate and drying the coated substrate for a time period selected to be short enough such that an open-cell foam is formed.

A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.

A thermo-stable, arsenic-free synergistic biocide concentrate composition to afford enhanced antimicrobial properties to a polymer matrix comprising (i) a mixture of trihalomethyl-thio-phthalimide analogue and a second biocide; (ii) an antioxidant; (iii) a carrier; and (iv) optionally, one or more additives. The composition is capable of withstanding high processing temperatures up to about 250° C., substantially without thermal degradation of biocides and discoloration of the polymer matrix employed.

A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source / drain is formed in the substrate beside the main spacer. After the source / drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source / drain is formed in the substrate respectively beside the two spacers. After the two source / drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.

A method of fabricating a diffusion barrier using a gas cluster ion beam apparatus is disclosed. The method includes generating a metal-organic gas that includes a metal-organic compound that includes an element of cobalt (Co) or cobalt and iron (CoFe). The metal-organic gas is combined with a carrier gas that is supplied to the gas cluster ion beam apparatus (GCIB). The GCIB processes the carrier gas to form a beam of gas cluster ions that include the metal-organic compound. The beam irradiates an interface surface of a target material (e.g. an IrMn, PtMn, or MnFe antiferromagnetic layer) and at least a portion of the Co or CoFe remains in contact with the interface surface to form a barrier that prevents a diffusion of manganese (Mn).

A process for the remediation of contaminated particulate materials by the addition of an environmentally benign, carbonaceous fuel source in low concentration to enable or enhance smoldering combustion. The process may be applied to both in situ and ex situ treatments. In an ex situ smoldering process for the remediation of contaminated particulate materials in a continuous manner, contaminated feed is introduced near the top of a treatment unit and treated product emerges near the bottom. A smoldering front is maintained in the unit, fed by the fuel in the contaminated particulate material and a supply of combustion-supporting gas, such as air.

Extrusion of a mix containing a pharmaceutically active agent can be achieved using a plasticizing excipient in an amount sufficient to act as plasticizer and also act as lubricant, thereby avoiding the need for inclusion of a lubricant. The invention provides multiparticulates with controlled release properties, substantially free of lubricant. The present invention is preferably directed to extruded multiparticulates containing an opioid such as oxycodone, an ammonium methacrylate copolymer such as Eudragit® RSPO, a plasticizing excipient such as preferably stearyl alcohol and a water permeability modifier such as preferably Eudragit® RLPO. The obtained multiparticulates show a release rate profile which is pH-independent.

A method of fabricating a diffusion barrier using a gas cluster ion beam apparatus is disclosed. The method includes generating a metal-organic gas that includes a metal-organic compound that includes an element of cobalt (Co) or cobalt and iron (CoFe). The metal-organic gas is combined with a carrier gas that is supplied to the gas cluster ion beam apparatus (GCIB). The GCIB processes the carrier gas to form a beam of gas cluster ions that include the metal-organic compound. The beam irradiates an interface surface of a target material (e.g. an IrMn, PtMn, or MnFe antiferromagnetic layer) and at least a portion of the Co or CoFe remains in contact with the interface surface to form a barrier that prevents a diffusion of manganese (Mn).

Certain example embodiments of this invention relate to a method of activating an indium tin oxide (ITO) thin film deposited, directly or indirectly, on a substrate. The ITO thin film is baked in a low oxygen environment at a temperature of at least 450 degrees C. for at least 10 minutes so as to provide for (1) a post-baked resistivity of the ITO thin film that is below a resistivity of a corresponding air-baked ITO thin film, (2) a post-baked visible spectrum absorption and transmission of the ITO thin film that respectively are below and above the absorption and transmission of the corresponding air-baked ITO thin film, and (3) a post-baked infrared reflectivity of the ITO thin film that is above the reflectivity of the corresponding air-baked ITO thin film. The substrate with the activated ITO thin film may be used in a photovoltaic device, for example.

A method of manufacturing the semiconductor device having a dual fully-silicided gate includes the following steps. A substrate having a first transistor and a second transistor formed thereon is provided, wherein the first transistor includes a first gate and a first source / drain and the second transistor includes a second gate and a second source / drain. The gate height of the first gate is different from that of the second gate. A first silicidation process is performed to respectively transform the first gate and the second gate into a first silicided gate and a second silicided gate simultaneously, wherein the material of the first silicided gate is different from that of the second silicided gate.