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Preparation method of RB-SiC (Reaction Bonded Silicon Carbide) substrate reflector surface modification layer

A technology of surface modification layer and mirror, applied in coating, sputtering, metal material coating process, etc., can solve the problem of difficult to grow uniform and dense Si modified layer, and improve polishing characteristics, film quality and so on. The effect of uniform and high film density

Inactive Publication Date: 2015-03-25
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the defect that it is difficult to grow a uniform and dense Si modified layer on a large-diameter RB-SiC substrate material in the prior art, a method for preparing a surface modified layer of an RB-SiC substrate mirror is provided.

Method used

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  • Preparation method of RB-SiC (Reaction Bonded Silicon Carbide) substrate reflector surface modification layer
  • Preparation method of RB-SiC (Reaction Bonded Silicon Carbide) substrate reflector surface modification layer
  • Preparation method of RB-SiC (Reaction Bonded Silicon Carbide) substrate reflector surface modification layer

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preparation example Construction

[0024] The invention provides a method for preparing a surface modification layer of an RB-SiC substrate mirror, comprising the following steps:

[0025] Step 1. Preparation of coating conditions: install the Si target on the twin sputtering cathodes of the coating machine, clean the surface of the RB-SiC substrate, fix it on the workpiece fixture of the coating machine, vacuum the coating machine, and apply a vacuum to the RB-SiC The base is baked;

[0026] Step 2, sputtering cathode Si target surface treatment: the sputtering cathode is fed with Ar gas, and the power of the intermediate frequency power supply is adjusted to perform pre-sputtering treatment on the surface of the Si target;

[0027] Step 3, preparing the Si modified layer: increasing the power of the intermediate frequency power supply and the flow rate of Ar gas, and depositing the Si modified layer on the RB-SiC substrate by using the intermediate frequency magnetron sputtering technology.

[0028] The inve...

Embodiment 1

[0036] The preparation method of the modified layer of the RB-SiC base reflector comprises the following specific steps:

[0037] Step 1. Preparation of coating conditions: install the Si target on the twin sputtering cathodes of the coating machine, clean the surface of the RB-SiC substrate, fix it on the workpiece fixture of the coating machine, and evacuate the vacuum chamber of the coating machine to 4.5 ×10 -4 Pa, bake at a temperature of 200°C and keep the temperature constant for 90 minutes;

[0038]Step 2. Sputtering cathode Si target surface treatment: pass high-purity Ar into the sputtering cathode, adjust the Ar flow rate to 400 sccm, adjust the power of the intermediate frequency power supply to 3KW, and the sputtering time to 50 minutes to make the high-energy Ar + Ions bombard the target surface;

[0039] Step 3, preparing the Si modified layer: adjust the power of the intermediate frequency power supply to 15KW, adjust the Ar gas flow to 550 sccm, and grow the...

Embodiment 2

[0043] The preparation method of the modified layer of the RB-SiC base reflector comprises the following specific steps:

[0044] Step 1. Preparation of coating conditions: install the Si target on the twin sputtering cathodes of the coating machine, clean the surface of the RB-SiC substrate, fix it on the workpiece fixture of the coating machine, and evacuate the vacuum chamber of the coating machine to 5.0 ×10 -4 Pa, bake at a temperature of 180°C and keep the temperature constant for 60 minutes;

[0045] Step 2. Sputtering cathode Si target surface treatment: pass high-purity Ar into the sputtering cathode, adjust the Ar flow rate to 350 sccm, adjust the intermediate frequency power supply to 2KW, and the sputtering time to 40 minutes to make the high-energy Ar + Ions bombard the target surface;

[0046] Step 3. Prepare the Si modified layer: adjust the power of the intermediate frequency power supply to 12KW, adjust the Ar gas flow to 500 sccm, and grow the Si modified l...

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Abstract

The invention provides a preparation method of an RB-SiC (Reaction Bonded Silicon Carbide) substrate reflector surface modification layer, and belongs to the technical field of thin film deposition. The method comprises the following steps: I, preparing filming conditions: mounting a Si target on a twin sputtering cathode of a filming machine, performing surface cleaning treatment on the RB-SiC substrate, fixing to a filming machine workpiece clamp, vacuuming the filming machine and roasting the RB-SiC substrate; II, performing surface treatment on the surface of the Si target of the sputtering cathode: introducing Ar gas into the sputtering cathode, and adjusting medium frequency power supply power to perform sputtering pre-treatment on the surface of the Si target; III, preparing the Si modification layer: increasing the medium frequency power supply power and Ar ventilation volume, and depositing the Si modification layer on the RB-SiC substrate by using a medium frequency magnetron sputtering technology. The preparation process is greatly simplified, the compactness of the film layer is high, the film is uniform, the polishing characteristic is obviously improved, and the optical quality of the surface of the polished substrate is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of thin film deposition, and in particular relates to a method for preparing a surface modification layer of an RB-SiC base reflector. Background technique [0002] Because SiC has excellent characteristics such as large specific stiffness, high thermal conductivity, small thermal expansion coefficient, and low density, it is an ideal mirror material for space and is widely used in various space projects. According to different preparation processes, SiC ceramics can be divided into hot press sintered SiC (HP-SiC), atmospheric pressure sintered SiC (S-SiC), reaction sintered SiC (RB-SiC) and chemical vapor deposition SiC (CVD-SiC) . Among them, HP-SiC and CVD-SiC are difficult to prepare mirror bodies with complex shapes, while the equipment required to prepare S-SiC is very expensive, the preparation process is complicated, and the sintering shrinkage rate reaches 10% to 15%, which is not suitable for larg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
CPCC23C14/35C23C14/185
Inventor 刘震高劲松刘海王笑夷杨海贵王彤彤申振峰
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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