37results about How to "Reduce polishing rate" patented technology

The present invention provides a mixed rare earth oxide for the production of a cerium-based abrasive, in which the ignition loss after heating at a temperature of 1,000 DEG C for 1 hour is 0.5 mass% or less on the dry mass basis and the crystallite diameter is from 200 to 400 A; a mixed rare earth fluoride for the production of a cerium-based abrasive, in which the ignition loss is from 3 to 15% on the dry mass basis; a process for producing a cerium-based abrasive from these mixed rare earth oxide or mixed rare earth fluoride; and a cerium-based abrasive produced by using these mixed rare earth oxide or mixed rare earth fluoride.

Disclosed are aluminum oxide particles wherein primary particles have a hexahedral shape and an aspect ratio of 1-5. The average primary particle diameter of the aluminum oxide particles is preferably 0.01-0.6 [mu]m. The a-particle ratio in the aluminum oxide particles is preferably 5-70%. The average secondary particle diameter of the aluminum oxide particles is preferably 0.01-2 [mu]m, and the value obtained by dividing the 90% particle diameter of the aluminum oxide particles by the 10% particle diameter is preferably 3 or less. The aluminum oxide particles are used as abrasive grains for polishing semiconductor device substrates, hard disk substrates or display substrates.

The invention discloses a polishing solution based on a polishing process of metal Co and application thereof. The polishing solution comprises the following raw material components in percentage by weight: 0.01-2% of inhibitor, 0-5% of oxidant, 0.1-10% of grinding granules, 0.001-10% of chelating agent and the balance of water, wherein the pH value of the polishing solution is adjusted to 3-5 by a pH value adjusting agent; the inhibitor is selected one or more of five-membered heterocyclic ring derivatives containing S and / or N; the oxidant is selected from one or more of hydrogen peroxide, ammonium persulfate, potassium periodate and potassium perchlorate; the grinding granules are selected from one or more of silicon dioxide, cerium dioxide and alumina; and the chelating agent is selected from amino acid or citric acid or a mixture thereof. The polishing solution disclosed by the invention can effectively inhibit the static corrosion of cobalt, reduce the polishing rate of cobalt and prevent the over-corrosion of cobalt in the polishing process.

The invention discloses new chemically mechanical polishing slurry for polishing metals. The polishing slurry is prepared by combining the following substances: abrasive particles, complexing agents and corrosion inhibitors. The slurry has the following positive effects: the removal rate of metals can be reduced, the metal materials can be prevented from whole and local corrosion, the defects can be obviously decreased and the surface quality can be improved.

The invention provides a chemo-mechanical polishing solution which comprises silicon dioxide grinding particles, a corrosion inhibitor, a complexing agent, an oxidant, at least one polyacrylic acid anionic surfactant and a metal surface defect improver. The polishing solution has the advantages that 1) the polishing solution is high in polishing rate to copper and low in polishing rate to tantalum, so that the polishing solution has a relatively high copper / tantalum polishing rate selection ratio; 2) the polishing solution can improve disc sinking and medium layer erosion of a polished copperwire; and 3) the polishing solution can improve the surface roughness of the polished copper, so that defects are reduced.

The invention provides a polishing pad, polishing equipment and a polishing method of a silicon wafer. The polishing pad comprises a polishing surface in contact with the silicon wafer, the polishingsurface is provided with at least one groove, the grooving positions of the grooves enable the edge of the silicon wafer to be at least partially suspended above the grooves when the silicon wafer ispolished. According to the polishing pad, the polishing equipment and the polishing method of the silicon wafer, only the polishing rate of the edge position of the silicon wafer is reduced under thecondition that the polishing rate of the whole wafer is kept basically unchanged, so that the flatness of the edge thickness of the silicon wafer is improved, and the product yield is increased.

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises water, cerium oxide, polyquaternium salt, carboxylic acid containing a benzene ring and polyvinylamine. Only when the polyquaternium salt, the carboxylic acid containing the benzene ring and the polyvinylamine are used together, the real automatic stopping function can be achieved, a blank wafer has the low polishing rate, the high polishing rate is kept when the step height of the patterned silicon wafer is high, the lower the step height is, the better the polishing speed is restrained, and the better the polishing effect is achieved. Therefore, the automatic stop function is realized.

The invention discloses a preparation method for silica-based gallium arsenide material with high quality and low surface roughness. The preparation method comprises the following steps: step 1, a germanium layer is grown on a silicon substrate; step 2, the silicon substrate on which the germanium layer is grown is placed in an MOCVD (metal-organic chemical vapor deposition) reaction chamber to be subjected to annealing for the first time; step 3, a low-temperature gallium arsenide nucleating layer and a high-temperature gallium arsenide layer are grown on the germanium layer in sequence to form a sample; step 4, the sample is polished and rinsed; step 5, the sample is put in the MOCVD reaction chamber to be subjected to annealing for the second time; and step 6, a gallium arsenide cover layer is grown on the surface of the sample, and the preparation of the silica-based gallium arsenide material is finished. The preparation method for the silica-based gallium arsenide material with high quality and low surface roughness can solve the transition problem of the silicon substrate to III-V material and establishes the basis of substrate for silica-based gallium arsenide photoelectric and microelectronic devices.

The invention discloses a NOR flash memory device and a preparation method thereof, wherein the NOR flash memory device comprises a sequentially stacked substrate, a tunnel oxide layer, a floating gate layer, a dielectric layer and a control gate layer; at least one through the control gate layer and the floating gate via hole of the dielectric layer, the floating gate via hole is located in the active area, and is used to expose the floating gate layer to lead out the floating gate electrode; at least one active area blocking structure, the active area blocking structure is arranged on the substrate Between the dielectric layer and the chemical mechanical polishing process on the floating gate layer, it is used to reduce the wear of the floating gate layer exposed by the floating gate via hole. The technical scheme of the present invention can effectively reduce the polishing rate of the floating gate layer around it by the chemical mechanical polishing process by adding a barrier structure in the active region, increase the thickness of the floating gate layer around it, and avoid damage caused by the floating gate layer being too thin. This leads to leakage or breakdown of the NOR flash memory device, which improves the reliability of the NOR flash memory device.

The invention relates to the field ship antifouling coatings, in particular to a nanometer polysiloxane nontoxic low-surface-energy ship antifouling coating for sea ships and a preparation method thereof, which are used for solving the problem of long-term nontoxicity, antifouling and corrosion on the outer bottom surface of a ship. The nanometer polysiloxane nontoxic low-surface-energy ship antifouling coating comprises the following components in parts by weight: 50-55 parts of polysiloxane resin, 1-5 parts of nanometer slurry, 5-8 parts of dimethylbenzene, 6-10 parts of butyl ester; 2.0-3.0 parts of ethylene glycol diethyl ether acetic ester, 0.3-0.5 part of a dispersing agent, 0.3-0.5 part of an antifoaming agent, 0.1-0.3 part of a flatting agent, 0.5-0.8 part of an anti-settling agent, 0.4-0.7 part of gas phase white carbon black, 15-22 parts of a pigment and 3-6 parts of a filler. The preparation method comprises the following steps of: proportionally preparing, dispersing, and grinding till the fineness is below 30 micros to obtain a component A; and mixing the component A and the component B for curing to obtain the nontoxic long-term ship sea antifouling coating. The nanometer polysiloxane nontoxic low-surface-energy ship antifouling coating is a surface protection material with extreme low surface energy, and plays roles in preventing fouling and scaling, and marine organisms are prevented from being adhered to the antifouling coating easily.

The invention discloses an NOR flash memory device and a preparation method thereof. The NOR flash memory device comprises a substrate, a tunneling oxide layer, a floating gate layer, a dielectric layer and a control gate layer, which are stacked up in sequence; at least one floating gate via hole running through the control gate layer and the dielectric layer, wherein the floating gate via hole is arranged in an active region and is used for exposing the floating gate layer to lead out a floating gate electrode; and at least one active region blocking structure, which is arranged between thesubstrate and the dielectric layer and is used for reducing wear of the floating gate layer exposed by the floating gate via hole in the chemical mechanical polishing process of the floating gate layer. According to the technical scheme, by adding the active region blocking structure, polishing rate of the chemical mechanical polishing process for the floating gate layer around can be effectivelyreduced, the thickness of the floating gate layer around is increased, the phenomenon leakage or breakdown of the NOR flash memory device due to too thin floating gate layer can be prevented, and reliability of the NOR flash memory device is improved.

The invention provides a chemical mechanical polishing liquid for regenerated wafers and a preparation method thereof. The mass percentage composition comprises 5% to 50% of abrasive particles, 0.1% to 10% of a rate accelerator, and 0.5% to 5% of a complexing agent. , 0.1% to 2% of pH regulator, 0.001% to 1% of nonionic surfactant and 0.001% to 1% of betaine type zwitterionic surfactant, and the balance is water. The polishing liquid can effectively repair the surface damage of the regenerated wafer, remove the residual film on the surface, and maintain a high removal rate of the silicon wafer. The surface quality of the regenerated wafer after polishing is excellent, and the number of cycles is increased.

The present invention discloses a kind of chemical and mechanical polishing fluid, which includes at least one kind of grinding grain, one kind of chemical additive and one kind of carrier, where the chemical additive is polycarboxylic acid and / or its salt. The chemical and mechanical polishing fluid can raise the flatness of the polished metal surface, lower the metal polishing rate obviously, optimize the dielectric polishing rate and expand technological parameter window.

To provide a polishing composition that can be used as an alternative of a polishing composition containing cerium oxide abrasive grains in STI and other such CMP applications, and to provide a polishing method and a method for producing a substrate using this polishing composition.A polishing composition being used in applications for polishing a layer that contains a substance having a pH range presenting a positive zeta potential in an aqueous solution of pH 6 or lower, wherein the polishing composition contains abrasive grains (A), abrasive grains (B), and a pH adjusting agent, and the abrasive grains (B) has a negative zeta potential in an aqueous solution of pH 6 or lower, and the value of the average secondary particle diameter of the abrasive grains (B) is less than the value of the average secondary particle diameter of the abrasive grains (A) and is 15 nm or less and the polishing composition has a pH of 6 or lower.