Chemical mechanical polishing solution

A chemical mechanical and polishing liquid technology, which is applied in the fields of polishing compositions containing abrasives, electrical components, semiconductor/solid-state devices, etc., can solve the problem that the polishing rate and planarization efficiency of dielectric materials cannot be taken into account at the same time, and achieve flatness The effects of high chemical efficiency, high polishing rate, and simplified steps

Pending Publication Date: 2021-06-22
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that the chemical mechanical polishing fluid in the prior art cannot simultaneously balance the polishing rate and the planarization efficiency of the dielectric material when the oxide layer with steps is flat

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanical polishing solution
  • Chemical mechanical polishing solution
  • Chemical mechanical polishing solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] In the present embodiment, the reference example contains 1wt% sol-type cerium oxide, and other embodiments and comparative examples then add or reduce a certain amount of compound and cerium oxide (see Table 1) on the basis of the reference example, and use ammoniacal liquor (NH4OH ) or nitric acid (HNO3) to adjust the pH to 4.5, and make up the mass percentage to 100% with water.

[0023] Polishing method: Mirra polishing machine is used to perform polishing test on TEOS (silicon oxide) blank wafer (hereinafter referred to as "TEOS blank"). The corresponding polishing conditions include: IC1010 polishing pad, polishing disc (Platten) and polishing head (Carrier) speed They are 93rpm and 87rpm respectively, the pressure is 3psi, the flow rate of polishing fluid is 150mL / min, and the polishing time is 60 seconds. The TEOS film thickness is measured with a NanoSpec non-metallic film thickness measuring instrument (NanoSpec6100-300). Starting at 3mm from the edge of the ...

Embodiment 2

[0030] In the present embodiment, the reference example contains 0.3wt% sol-type cerium oxide, and other embodiments and comparative examples add a certain amount of compound or cerium oxide (see Table 2) on the basis of the reference example, and use ammonia water (NH 4 OH) or nitric acid (HNO 3 ) to adjust the pH to 4.5, and make up the mass percentage to 100% with water.

[0031] Polishing method: Mirra polishing machine is used for polishing to test TEOS blank and patterned wafers. The corresponding polishing conditions include: IC1010 polishing pad, polishing disc (Platten) and polishing head (Carrier) with speeds of 93rpm and 87rpm respectively , pressure 3psi, polishing fluid flow rate 150mL / min. The TEOS film thickness was measured with a NanoSpec film thickness measurement system (NanoSpec6100-300, Shanghai Nanospec Technology Corporation). Starting at 3mm from the edge of the wafer, measure 49 points at equal intervals on the diameter line. The polishing rate is a...

Embodiment 3

[0040] In the present embodiment, the reference example contains 0.3wt% sol-type cerium oxide, and other embodiments then add a certain amount of compound and change the content of the sol-type cerium oxide on the basis of the reference example (see Table 2), and use ammonia ( NH 4 OH) or nitric acid (HNO 3 ) to adjust the pH to 4.5, and make up the mass percentage to 100% with water.

[0041] Polishing method: Mirra polishing machine is used for polishing to test TEOS blank and patterned wafers. The corresponding polishing conditions include: IC1010 polishing pad, polishing disc (Platten) and polishing head (Carrier) with speeds of 93rpm and 87rpm respectively , pressure 3psi, polishing fluid flow rate 150mL / min. The TEOS film thickness was measured with a NanoSpec film thickness measuring system (NanoSpec6100-300, Shanghai Nanospec Technology Corporation). Starting at 3mm from the edge of the wafer, measure 49 points at equal intervals on the diameter line. The polishing...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises water, cerium oxide grinding particles and hydroxylamine. 4-hydroxybenzoic acid or salicylhydroxamic acid can be further added into the chemical mechanical polishing solution, so that the removal rate of the patterned silicon dioxide sheet can be increased.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid. Background technique [0002] At present, chemical mechanical polishing (CMP) has become the most effective and mature planarization technology in the manufacturing process of micro-nano devices. In the manufacturing process of micro-nano devices, Interlayer Dielectric-ILD (Interlayer Dielectric-ILD) technology has become the mainstream isolation technology due to its outstanding isolation performance, flat surface morphology and good locking performance. The role of chemical mechanical polishing in the formation of ILD structures is to flatten the oxide layer with steps, and its main polishing performance parameters are polishing rate and planarization efficiency. It is generally more effective to use cerium oxide as polishing particles to increase the polishing rate of dielectric materials, but high polishing rates often...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09G1/02
CPCC09G1/02H01L21/3105H01L21/321C09K3/1409C09K3/1463
Inventor 李守田任晓明贾长征
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap