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Chemical mechanical polishing solution

A chemical mechanical and polishing liquid technology, which is applied in the fields of polishing compositions containing abrasives, electrical components, semiconductor/solid-state devices, etc., can solve the problem that the polishing rate and planarization efficiency of dielectric materials cannot be taken into account at the same time, and achieve flatness The effects of high chemical efficiency, high polishing rate, and simplified steps

Pending Publication Date: 2021-06-22
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that the chemical mechanical polishing fluid in the prior art cannot simultaneously balance the polishing rate and the planarization efficiency of the dielectric material when the oxide layer with steps is flat

Method used

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Examples

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Embodiment 1

[0022] In the present embodiment, the reference example contains 1wt% sol-type cerium oxide, and other embodiments and comparative examples then add or reduce a certain amount of compound and cerium oxide (see Table 1) on the basis of the reference example, and use ammoniacal liquor (NH4OH ) or nitric acid (HNO3) to adjust the pH to 4.5, and make up the mass percentage to 100% with water.

[0023] Polishing method: Mirra polishing machine is used to perform polishing test on TEOS (silicon oxide) blank wafer (hereinafter referred to as "TEOS blank"). The corresponding polishing conditions include: IC1010 polishing pad, polishing disc (Platten) and polishing head (Carrier) speed They are 93rpm and 87rpm respectively, the pressure is 3psi, the flow rate of polishing fluid is 150mL / min, and the polishing time is 60 seconds. The TEOS film thickness is measured with a NanoSpec non-metallic film thickness measuring instrument (NanoSpec6100-300). Starting at 3mm from the edge of the ...

Embodiment 2

[0030] In the present embodiment, the reference example contains 0.3wt% sol-type cerium oxide, and other embodiments and comparative examples add a certain amount of compound or cerium oxide (see Table 2) on the basis of the reference example, and use ammonia water (NH 4 OH) or nitric acid (HNO 3 ) to adjust the pH to 4.5, and make up the mass percentage to 100% with water.

[0031] Polishing method: Mirra polishing machine is used for polishing to test TEOS blank and patterned wafers. The corresponding polishing conditions include: IC1010 polishing pad, polishing disc (Platten) and polishing head (Carrier) with speeds of 93rpm and 87rpm respectively , pressure 3psi, polishing fluid flow rate 150mL / min. The TEOS film thickness was measured with a NanoSpec film thickness measurement system (NanoSpec6100-300, Shanghai Nanospec Technology Corporation). Starting at 3mm from the edge of the wafer, measure 49 points at equal intervals on the diameter line. The polishing rate is a...

Embodiment 3

[0040] In the present embodiment, the reference example contains 0.3wt% sol-type cerium oxide, and other embodiments then add a certain amount of compound and change the content of the sol-type cerium oxide on the basis of the reference example (see Table 2), and use ammonia ( NH 4 OH) or nitric acid (HNO 3 ) to adjust the pH to 4.5, and make up the mass percentage to 100% with water.

[0041] Polishing method: Mirra polishing machine is used for polishing to test TEOS blank and patterned wafers. The corresponding polishing conditions include: IC1010 polishing pad, polishing disc (Platten) and polishing head (Carrier) with speeds of 93rpm and 87rpm respectively , pressure 3psi, polishing fluid flow rate 150mL / min. The TEOS film thickness was measured with a NanoSpec film thickness measuring system (NanoSpec6100-300, Shanghai Nanospec Technology Corporation). Starting at 3mm from the edge of the wafer, measure 49 points at equal intervals on the diameter line. The polishing...

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Abstract

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises water, cerium oxide grinding particles and hydroxylamine. 4-hydroxybenzoic acid or salicylhydroxamic acid can be further added into the chemical mechanical polishing solution, so that the removal rate of the patterned silicon dioxide sheet can be increased.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid. Background technique [0002] At present, chemical mechanical polishing (CMP) has become the most effective and mature planarization technology in the manufacturing process of micro-nano devices. In the manufacturing process of micro-nano devices, Interlayer Dielectric-ILD (Interlayer Dielectric-ILD) technology has become the mainstream isolation technology due to its outstanding isolation performance, flat surface morphology and good locking performance. The role of chemical mechanical polishing in the formation of ILD structures is to flatten the oxide layer with steps, and its main polishing performance parameters are polishing rate and planarization efficiency. It is generally more effective to use cerium oxide as polishing particles to increase the polishing rate of dielectric materials, but high polishing rates often...

Claims

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02H01L21/3105H01L21/321C09K3/1409C09K3/1463
Inventor 李守田任晓明贾长征
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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