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A chemical mechanical polishing liquid for regenerated wafer and preparation method thereof

A chemical mechanical and polishing liquid technology, applied in the direction of polishing composition containing abrasives, etc., can solve the problems of wafer surface damage, slow corrosion rate, increased cost, etc., to repair surface damage, increase fluidity, and stabilize friction Effect

Active Publication Date: 2022-07-12
万华化学集团电子材料有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there will be the following problems: (1) fast and uneven corrosion, causing damage to the wafer surface; (2) since the corrosion rate of the central part is slower than that of the peripheral part, the central part of the wafer is more dense than the peripheral side. thick; (3) there may be residual film after chemical corrosion
However, controlling the number of large particles in the polishing liquid requires fine filtration steps, and the consumption of different specifications of filter elements will increase the cost, which is inconsistent with the original intention of using recycled wafers

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～11

[0042] Prepare a chemical mechanical polishing solution for regenerated wafers. The ingredients and mass percentages of raw materials other than water in the formula are shown in Table 1. The balance is ultrapure water, and the sum of the mass percentages of each component is 100%. , the steps are:

[0043] 1) Take the ground particles, add water to dilute them under stirring conditions, and mix them evenly to obtain a dispersion;

[0044] 2) After the rate accelerator, the complexing agent and the pH adjusting agent are mixed uniformly, they are added to the dispersion liquid in step 1), fully dissolved and uniformly mixed to obtain a mixed liquid;

[0045] 3) Under stirring conditions, the nonionic surfactant and the betaine-type zwitterionic surfactant are added to the mixed solution in step 2), and the mixture is uniformly mixed to prepare a chemical mechanical polishing solution for regenerated wafers.

[0046] Table 1 Composition of raw materials of chemical mechanical ...

Embodiment 1～11 and comparative example 1～5

[0059] The application of the polishing liquid prepared in Examples 1-11 and Comparative Examples 1-5:

[0060] The diameter of the silicon wafer used is 300mm, provided by Shandong Yuanjing Electronic Technology Co., Ltd., and after chemical etching treatment, there is scratch on its surface (the silicon wafer used in Example 10 is such as: figure 1 As shown, the surfaces of the silicon wafers used in other embodiments and comparative examples have similar scratches).

[0061] The polishing liquids are respectively diluted 20 times with ultrapure water for use, the pH after dilution is 10-11, and the solid content is 0.5%-1%.

[0062] The polishing conditions are as follows: the polishing machine is a Japanese Speedfam 36GPAW single-side polishing machine with four polishing heads, each of which can polish a regenerated wafer.

[0063] The polishing pad was SUBA800. Polishing pressure 300g / cm 2 , the temperature of the polishing pad is 27°C, the speed of the polishing head...

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Abstract

The invention provides a chemical mechanical polishing liquid for regenerated wafers and a preparation method thereof. The mass percentage composition comprises 5% to 50% of abrasive particles, 0.1% to 10% of a rate accelerator, and 0.5% to 5% of a complexing agent. , 0.1% to 2% of pH regulator, 0.001% to 1% of nonionic surfactant and 0.001% to 1% of betaine type zwitterionic surfactant, and the balance is water. The polishing liquid can effectively repair the surface damage of the regenerated wafer, remove the residual film on the surface, and maintain a high removal rate of the silicon wafer. The surface quality of the regenerated wafer after polishing is excellent, and the number of cycles is increased.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical polishing (CMP), in particular to a chemical mechanical polishing liquid for regenerated wafers and a preparation method thereof. Background technique [0002] Semiconductor technology has developed rapidly in the past few decades. Silicon wafers have become larger and larger from 50mm to 300mm. The critical dimensions of electronic devices are constantly shrinking. Due to the gradual shrinking of device sizes and the reduction of the depth of focus of optical lithography equipment , the requirements of the integrated circuit manufacturing process on the surface of silicon wafers have also increased to the nanometer level. The flatness of the silicon wafer surface will be directly related to the performance quality of the chip, so the fab needs to monitor the performance of the manufacturing equipment and maintain stability at all times to ensure the final yield. Since many tests and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 徐贺卫旻嵩卞鹏程王庆伟李国庆王永东崔晓坤王瑞芹
Owner 万华化学集团电子材料有限公司
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