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Chemically mechanical polishing solution

A technology of chemical machinery and polishing fluid, applied in the direction of polishing compositions containing abrasives, etc., can solve the problems of high price and high equipment requirements, and achieve the effect of good stability and long precipitation time

Inactive Publication Date: 2012-05-23
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Abstract
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Problems solved by technology

[0004] At present, cerium oxide polishing liquid is widely used in chip factories. This type of polishing liquid has a fast polishing speed and a relatively high choice for silicon nitride. It is a relatively mature industrial product, but this type of polishing liquid is prone to precipitation and stratification. The equipment requirements are high, and the price is expensive. In the context of reducing consumption and increasing efficiency in the global chip industry, cost reduction is also one of the requirements for polishing fluid

Method used

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Embodiment 1～7

[0022]

[0023] SURF: CF 3 CF 2 (CF 2 CF 2 ) n CH 2 CH 2 SO 3 L, n=2-6, L=H, NH 4

[0024] As can be seen from the data in the table above, the abrasive particles of this patent have a higher HDP polishing rate and a higher silicon nitride rate. After adding a fluorine-containing surfactant, the removal rate of silicon nitride is greatly reduced, while HDP silicon dioxide has almost no effect, and the polishing selection ratio of the two is adjusted to 10-20, which is beneficial to eliminate the step height of silicon dioxide, realize planarization, and stop at the silicon nitride layer to form shallow trench isolation.

[0025] The polishing liquid of the invention has a higher HDP removal rate and a higher selectivity ratio to silicon nitride than the commercially available products, and the polishing liquid has a longer precipitation time than the commercially available products, better stability and low cost.

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Abstract

The invention discloses a chemically mechanical polishing solution used for shallow-trench isolation. The polishing solution at least contains one silicon-based abrasive material, one water-soluble anionic surfactant and one pH regulator, and has higher silica removal rate and lower silicon nitride removal rate, a polished surface is smooth and clean, and the chemically mechanical polishing solution has good stability and is suitable for the chemical-mechanical planarization for the shallow-trench isolation.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid. Background technique [0002] The manufacture of CMOS chips usually integrates hundreds of millions of active devices (including NMOS and PMOS) on silicon substrate materials, and then designs various circuits to realize complex logic functions and analog functions. To ensure electrical isolation between different devices, it is necessary to use insulating materials to isolate them. Shallow trench isolation (STI) is an industrialized method to form isolation regions between active devices. This isolation method is to grow a layer of silicon dioxide on the substrate, and then deposit a layer of silicon nitride film, the typical thickness of the two is 10-20nm and 50-100nm, and then apply glue, Expose and develop as shown below. [0003] It can be seen from the figure that the steps (5)-(6) need to use CMP planarization process, which requires rapid removal of silicon dioxide and stops on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 宋伟红姚颖
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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