183results about How to "Material removal" patented technology

A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.

A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.

Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and / or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.

Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and / or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.

A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.

Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and / or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and / or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

A laser-based system for processing target material within a microscopic region without causing undesirable changes in electrical or physical characteristics of at least one material surrounding the target material, the system includes a seed laser, an optical amplifier, and a beam delivery system. The seed laser for generating a sequence of laser pulses having a first pre-determined wavelength. The optical amplifier for amplifying at least a portion of the sequence of pulses to obtain an amplified sequence of output pulses. The beam delivery system for delivering and focusing at least one pulse of the amplified sequence of pulses onto the target material. The at least one output pulse having a pulse duration in the range of about 10 picoseconds to less than 1 nanosecond. The pulse duration being within a thermal processing range. The at least one focused output pulse having sufficient power density at a location within the target material to reduce the reflectivity of the target material and efficiently couple the focused output into the target material to remove the target material.

A structure and method for polishing a device include oscillating a carrier over an abrasive surface (the carrier bringing a polished surface of the device into contact with the abrasive surface, the oscillating allowing a portion of the polished surface to periodically oscillate off the abrasive surface), optically determining a reflective measure of a plurality of locations of the polished surface as the portion of the device oscillates off the abrasive surface and calculating depths of the locations of the polished surface based of the reflective measure.

An improved method for determining endpoint of a time division multiplexed process by monitoring an identified region of a spectral emission of the process at a characteristic process frequency. The region is identified based upon the expected emission spectra of materials used during the time division multiplexed process. The characteristic process frequency is determined based upon the duration of the steps in the time division multiplexed process. Changes in the magnitude of the monitored spectra indicate the endpoint of processes in the time division multiplexed process and transitions between layers of materials.

The support removal apparatus comprising in combination a retention tank having a manifold assembly comprising a plurality of nozzle heads in hydraulic communication with the discharge side of a pump, collectively configured for agitating an aqueous cleaning solution comprised of sodium or potassium hydroxide, sodium or potassium carbonate, and water; a heating element mounted within the retention tank for heating the aqueous cleaning solution to a predetermined temperature set point; a basket strainer mounted within the retention tank in hydraulic communication with the intake side of the pump to mitigate passage of small rapid prototype parts and residual support material therethrough and into the pump and manifold assembly; a work surface mounted atop the retention tank and having a movable lid fitted with a basket for containing small rapid prototype parts; a thermocouple for maintaining the temperature within a tolerable range for optimum removal of support material; a level indicator to ensure adequate solution level in the retention tank for operability of the pump and heating element; a cabinet having interface controller mounted on an exterior panel thereof for setting timer and heat functions; and a microprocessor having capabilities for making minute adjustments to the heating element via feedback from the thermocouple and controlling operation of the pump and heating element for a pre-set time interval.

Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.

PCT No. PCT / JP98 / 01977 Sec. 371 Date Dec. 21, 1998 Sec. 102(e) Date Dec. 21, 1998 PCT Filed Apr. 30, 1998 PCT Pub. No. WO98 / 50448 PCT Pub. Date Nov. 12, 1998A method for continuously producing a polyester by continuously melt-polymerizing a raw material consisting of a dicarboxylic acid component composed of mainly an aromatic dicarboxylic acid and containing an alicyclic dicarboxylic acid or an aliphatic dicarboxylic acid, or their ester-forming derivatives with a diol component, characterized in that said diol component as a distillate in the polycondensation reaction, including an adhering material, is condensed, said adhering material is separated centrifugally, and then the residual diol component, after distillation, is supplied to an esterification reaction or an ester interchange reaction.

Embodiments of the invention provide a method and an apparatus for in situ chuck cleaning, which advantageously reduces downtime to restore flatness. In one embodiment, a method of cleaning a chuck in situ comprises providing a cleaning layer on a substrate, the cleaning layer comprising a deformable material; positioning the substrate to place the cleaning layer in contact with a chuck surface of the chuck in situ, the chuck surface having thereon a material to be removed from the chuck surface; pressing the cleaning layer against the chuck surface with a sufficient pressure to allow the material on the chuck surface to be attached to the cleaning layer; and removing the substrate with the cleaning layer and the material attached thereto from the chuck.

The present invention is directed to a rotary mining apparatus. The apparatus includes an elongated housing with a leading end and an opposite trailing end. The apparatus also includes a compression device coupled to the housing. The apparatus further includes a plurality of cables extending along the housing. Each of the cables has an end connected to the compression device. The apparatus also includes a plurality of cutting devices attached to the cables at ends of the cables opposite the ends connected to the compression device. The present invention is also directed to a method of removing subterranean material. The method includes the step of inserting a rotary mining device having radially extendable cutting devices into a subterranean shaft. The method also includes the steps of rotating the mining device such that the cutting devices contact the sides of the shaft and extending the cutting devices into the sides of the shaft.

A chemical mechanical planarization solution is useful for removing tantalum barrier materials. The solution includes by weight percent 0 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal and 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 tantalum removal agent selected from the group consisting of formamidine, formamidine salts, formamidine derivatives, guanidine derivatives, guanidine salts and mixtures thereof, 0 to 5 abrasive, 0 to 15 total particles selected from the group consisting of polymeric particles and polymer-coated coated particles and balance water. The solution has a tantalum nitride to TEOS selectivity of at least 3 to 1 as measured with a microporous polyurethane polishing pad pressure measure normal to a wafer less than 20.7 kPa.

The present invention is made to provide a carbon catalyst capable of preventing the coarsening of particles of nanoshell structure of carbon which causes reduction in activity for oxygen reduction reaction. The carbon catalyst is produced by the steps of: preparing a carbon precursor polymer; mixing a transition metal or a compound of the transition metal into the carbon precursor polymer; spinning the mixture of the carbon precursor polymer and the transition metal or the compound of the transition metal into fibers; and carbonizing the fibers.

An improved method for singulation of electronic substrates into dice uses a laser to first form cuts in the substrate and then chamfers the edges of the cuts by altering the laser parameters. The chamfers increase die break strength by reducing the residual damage and removes debris caused by the initial laser cut without requiring additional process steps, additional equipment or consumable supplies.

A cluster mill blank includes a framework constructed to cooperate with a blank holder of an existing CAD / CAM system, and a plurality of sub-blanks attached to the framework forming an addressable matrix or cluster blank. CAD / CAM systems including such a framework, as well as associated methods are described.

A method of fabricating plastic objects having an insert of Lenticular lens material integrally bonded or otherwise attached therein. In one embodiment, the method is used to fabricate a container, such as a conical cup, by first manufacturing or providing a sheet of Lenticular material comprising layers of lens material and optical ridges and grooves and an ink layer printed on the flat side of the lens material. To protect the ink from the heat of molten or moldable plastic during later plastic processing, a thermally protective substrate is attached or bonded to the ink layer by using adhesives to attach a plastic substrate or by coating the ink with coating materials that thermally protect the ink from high temperatures. In one embodiment, the protective substrate is applied in a two step process of first placing a plastic hot melt onto a polyester or other material release liner and, after cooling of the hot melt, using heat and pressure to laminate or bond the hot melt plastic to the ink and then removing the liner. Lenticular inserts are cut out of the Lenticular material sheets and the inserts are positioned within a mold where the container is formed by injection, blow, or other molding process. In this step, the substrate acts as a bonding surface as it contacts the molten plastic, melts, and then cools forming a bonding interface with the plastic used to form the container.

A sunroof assembly with a composite water management assembly having side rails with a water trough connected at one end to end caps and to a pair of corners at the other, which connect to a front rail at substantially right angles to the side rails. This composite assembly can be connected by vibration welding. A reinforcement bar can be connected at substantially right angles to the rearward end of vertically oriented slide tracks snap fitted into substantially the length of the side rails. A pair of mirror slide mechanisms with vertically oriented mounts are retained, but free to slide, within a channel of the slide track and outboard of the water trough. A movable panel such as a glass sunroof are attached to the slide mechanism. A sunshade can be added that also combines water shedding ribs to channel water to the water trough.

A design method of topology optimization for flexible hinge is disclosed in the invention, comprising following steps: step 1: establishing a design model of topology optimization for flexible hinge, setting an outline of flexible hinge with a typical notch as a shape of design domain and defining a rigid region (non-design domain); step 2: establishing a finite element model of topology optimization for flexible hinge; step 3: establishing a mathematical model of topology optimization problem for flexible hinge based on the finite element model; step 4: calculating a sensitivity of topology optimization problem for flexible hinge; step 5: employing an optimization algorithm to solve the topology optimization problem for flexible hinge, updating a design variable and obtaining a final topology result graph; step 6: according to the final topology result graph obtained by the topology optimization, extracting its outline and obtaining a novel flexible hinge by appropriate modification. Using the method of topology optimization, the invention designs the flexible hinge on a concept level. The novel flexible hinge can be designed with a more complex structure and more excellent performances, having a larger flexibility, a higher precision and a smaller maximum stress.

A thermal printer processible combination wristband / label form has a top portion comprising a wristband which occupies substantially the entirety of thereof and a bottom portion comprising one of several alternative embodiments of labels. The label embodiments include a plurality of individually formed labels, a plurality of labels occupying substantially the entirety of the bottom portion, and a die cut defining a label portion with pairs of nicks spaced along an upper and lower border of the die cut and between which a user may tear off labels of a desired length including different lengths. The form is produced in quantity and joined together into a fan fold strip having an overall width of a nominal two inches so as to be capable of being printed by relatively older thermal printers having a nominal two inch throat.

A multi-purpose cutting device for removing the spinal cord and spinal meninx lining of the spinal cord of a slaughtered animal which has been longitudinally cut in two along the length of the spinal cord. The cutting device comprises a rotary cutting tool having a hub with radially outwardly projecting cutting fingers equidistantly spaced apart around the hub. The cutting fingers have blunt ends and are of substantially uniform length. A pair of circular saw blades are rigidly secured to opposite faces of the cutting tool. The saw blades have a circumference that approximately matches the effective circumference of the working ends of the cutting fingers. In use, when the cutting device is powered by a drive motor, the cutting fingers and saw blades rotate in unison. The cutting fingers rotate to remove the spinal cord and spinal meninx from the carcass while the saw blades cut into bone along opposite sides of the meninx. The saw blades assist the cutting fingers in dislodging regions of bone material in which the spinal cord or meninx materials may be lodged.