1326 results about "Regioselectivity" patented technology

Backthinning in an area selective manner is applied to CMOS imaging sensors 12 for use in electron bombarded active pixel array devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels of an active pixel array providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.

A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-nitrogen-and-carbon-containing material. The plasma effluents react with the patterned heterogeneous structures to selectively remove silicon-nitrogen-and-carbon-containing material from the exposed silicon-nitrogen-and-carbon-containing material regions while very slowly removing selected other exposed materials. The silicon-nitrogen-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element controls the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-nitrogen-and-carbon-containing material at a faster rate than exposed silicon oxide or exposed silicon nitride.

A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.

A semiconductor device has selectively applied thin tensile films and thin compressive films, as well as thick tensile films and thick compressive films, to enhance electron and hole mobility in CMOS circuits. Fabrication entails steps of applying each film, and selectively removing each applied film from areas that would not experience performance benefit from the applied stressed film.

The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.

A method for regioselective synthesis of CCl-779 based on boronate chemistry is provided. Also provided are novel intermediates useful in this method.

This invention relates a cellulose solution comprising cellulose and at least one tetraalkylammonium alkylphosphate and processes to produce the cellulose solution. Another aspect of this invention relates to shaped articles prepared from a cellulose solution comprising cellulose and at least one tetraalkylammonium alkylphosphate. Another embodiment of this invention relates to compositions comprising derivatives of cellulose prepared from a cellulose solution comprising at least one tetraalkylammonium alkylphosphate. Another embodiment of this invention relates to compositions comprising regioselectively substituted cellulose esters prepared from a cellulose solution comprising cellulose and at least one tetraalkylammonium alkylphosphate. In another embodiment of the invention, the cellulose esters of the present invention are used as protective and compensation films for liquid crystalline displays.

The present invention at first prepares a penta-alkyl DTPA and then processes a regioselective hydrolysis over the penta-alkyl DTPA while using a metal ion as a catalyst to obtain a tetra-alkyl DTPA, where, by the above two steps, a monoreactive DTPA derivative is manufactured.

The invention relates to the field of image detection, and especially relates to an automobile surface damage classification method and device based on deep learning. According to the method and the device, the classification method and device are provided for the problems in the prior art. Characteristic learning and classification are carried out on input to-be-detected images. Specifically, candidate areas are extracted from the to-be-detected images to by employing an area selective search algorithm, and location information of the candidate areas are recorded; the to-be-detected images are input into a characteristic diagram extraction network model without an output layer, thereby extracting the characteristic vectors of the candidate areas of the to-be-detected images; the characteristic vectors of the candidate areas are input into an SVM classifier to find target characteristic vectors; the locations of the corresponding candidate areas on the to-be-detected images, namely, the target areas of the to-be-detected images, are found according to the locations of the target characteristic vectors in the characteristic diagram; and the target areas of the to-be-detected images are input into an optimum classification network model, and the probabilities of the areas on damage levels are output.

Backthinning in an area selective manner is applied to imaging sensors 12 for use in electron bombarded devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.

A zone-selective-interlocking system for an electrical power distribution system that has at least one upstream breaker and at least one downstream breaker is provided. Each breaker in the power distribution system has a zone-selective-interlocking circuit that includes a zone-selective-interlocking-input circuit and a zone-selective-output circuit. The zone-selective-interlocking system also includes a monitoring device to monitor the voltage sent from the zone-selective-interlocking-output circuit of the at least one downstream breaker to the zone-selective-interlocking-input circuit of the at least one upstream breaker and determine whether there is a proper or improper connection between the upstream and downstream breaker and whether the downstream breaker is sending a restraint signal to the upstream breaker.

A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.

There is disclosed a method of selectively extracting ions comprising the steps of:providing a supply of ions in a body of gas;generating a ponderomotive ion trapping potential generally along an axis;generating further potentials to provide an effective potential which prevents ions from being extracted from an extraction region;trapping ions in said effective potential; andselectively extracting ions of a predetermined m / z ratio or ion mobility from the extraction region;in which the characteristics of the effective potential which prevent ions from being extracted from the extraction region are caused, at least in part, by the generation of the ponderomotive ion trapping potential.

Disclosed herein is a regioselective synthesis of compounds represented by formula (I):or a salt, solvate, clathrate, or prodrug thereof, wherein X, Y, R2, R3, R4, R7, R8, R9, R10, m and n are defined as within.