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Method for manufacturing nano-array electrode and photoelectric conversion device using same

a photoelectric conversion device and nano-array electrode technology, applied in the field of nano-array electrodes, can solve the problems of affecting the enhancement of productivity, difficult to accurately control the structure of particles, and deactivation of elementary excitation states, and achieve the effects of enhancing the efficiency of organic film solar cells, effective charge separation, and high photoelectric conversion efficiency

Inactive Publication Date: 2006-10-19
NIPPON OIL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0004] For example, the most commonly used semiconductor material for dye-sensitized solar cells is titanium oxide (see, for example, Document 1 given below). The solar cells includes functional electrodes formed by forming a film of titanium oxide particles a few tens of nanometers in size on a transparent electrically conductive substrate and allowing a dye to adsorb thereon. It has been reported that the photo-conversion efficiency of this functional electrode depends largely on the structure of the titanium oxide layer such as the shape of titanium oxide particles and the bonding state thereof. The portions wherein titanium oxide particles bond to each other form barriers to the passage of photo-generated electrons through the titanium oxide layer to the transparent electrically conductive substrate. Due to the formation of the barriers, sufficient advantageous effects to enhance the solar energy conversion efficiency have not been able to be obtained even though the titanium oxide layer is thickened and a larger amount of dye is adsorbed thereto. In order to enhance the solar energy conversion efficiency, it has been attempted to control the structure of titanium oxide particles forming the titanium oxide layer (see, for example, Documents 2 to 8). However, it is difficult to accurately control the structure of particles, and at the same time an issue concerning the enhancement of the productivity also arises.

Problems solved by technology

When these electrons, phonons, or complexes thereof propagate through a semiconductor layer which is formed of aggregated semiconductor fine particles, scattering of the fine particles therein causes the deactivation of their elementary excitation state, which will be a problem when the performance of a functional device is intended to be improved.
However, it is difficult to accurately control the structure of particles, and at the same time an issue concerning the enhancement of the productivity also arises.
However, there is a problem that it is difficult to control the structure by the mere mixing of the donor and acceptor.

Method used

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  • Method for manufacturing nano-array electrode and photoelectric conversion device using same
  • Method for manufacturing nano-array electrode and photoelectric conversion device using same
  • Method for manufacturing nano-array electrode and photoelectric conversion device using same

Examples

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example 1

[Manufacture of an Anodic-Oxide Porous Alumina Film]

[0212] An aluminum substrate (purity: 99.99%, manufactured by TOYO ALUMINIUM K.K.) was subjected to constant-current electrolysis at a temperature of 70° C. in a sulfuric acid-phosphoric acid mixed solution (85% 330 mL phosphoric acid, 75 mL concentrated sulfuric acid, 15 mL ethylene glycol, and 80 mL water) for 5 minutes by applying a current of 250 mA / cm2 to the aluminum substrate used as an anode and a black carbon used as a cathode and then washed with water and dried. An anodic oxidization was conducted at a temperature of 16° C. in an aqueous solution containing 0.5 mol / L oxalic acid for 5 hours by applying a voltage of 40 V to the aluminum substrate used as an anode and a black carbon used as a cathode. Thereafter, the aluminum substrate was dipped into a chromic acid-phosphoric acid mixed solution (6 g chromic oxide, 20 g phosphoric acid, and 300 g water) at a temperature of 50° C. for 12 hours and then washed with water a...

example 2

[Manufacture of an Anodic-Oxide Porous Alumina Film]

[0216] An aluminum substrate (purity: 99.99%, manufactured by TOYO ALUMINIUM K.K.) was subjected to constant-current electrolysis at a temperature of 70° C. in a sulfuric acid-phosphoric acid mixed solution (85% 330 mL phosphoric acid, 75 mL concentrated sulfuric acid, 15 mL ethylene glycol, and 80 mL water) for 5 minutes by applying a current of 250 mA / cm2 to the aluminum substrate used as an anode and a black carbon used as a cathode and then washed with water and dried. An anodic oxidization was conducted at a temperature of 16° C. in an aqueous solution containing 0.5 mol / L oxalic acid for 5 hours by applying a voltage of 40 V to the aluminum substrate used as an anode and a black carbon used as a cathode. Thereafter, the aluminum substrate was dipped into a chromic acid-phosphoric acid mixed solution (6 g chromic oxide, 20 g phosphoric acid, and 300 g water) at a temperature of 50° C. for 12 hours and then washed with water a...

example 3

[Manufacture of an Anodic-Oxide Porous Alumina Film]

[0220] An aluminum substrate (purity: 99.99%, manufactured by TOYO ALUMINIUM K.K.) was subjected to constant-current electrolysis at a temperature of 70° C. in a sulfuric acid-phosphoric acid mixed solution (85% 330 mL phosphoric acid, 75 mL concentrated sulfuric acid, 15 mL ethylene glycol, and 80 mL water) for 5 minutes by applying a current of 250 mA / cm2 to the aluminum substrate used as an anode and a black carbon used as a cathode and then washed with water and dried. An anodic oxidization was conducted at a temperature of 16° C. in an aqueous solution containing 0.3 mol / L sulfuric acid for 8 hours by applying a voltage of 25 V to the aluminum substrate used as an anode and a black carbon used as a cathode. Thereafter, the aluminum substrate was dipped into a chromic acid-phosphoric acid mixed solution (6 g chromic oxide, 20 g phosphoric acid, and 300 g water) at a temperature of 50° C. for 12 hours and then washed with water...

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Abstract

The present invention provides a method of manufacturing a nano-array electrode with a controlled nano-structure by filling an electrode material into the fine pores of an anodic-oxide porous alumina film obtained by anodically oxidizing aluminum in electrolyte, or by filling a material into the fine pores of an anodic-oxide porous alumina film obtained by anodically oxidizing aluminum in electrolyte and then filling an electrode material into the spaces defined by the nano-array formed by removing the anodic-oxide porous alumina film, or by filling repeatedly an electrode material in the fine pores of the anodic-oxide porous alumina film to fill a plurality of electrode materials. A high-performance, high-efficiency photoelectric converting device comprising a nano-array electrode manufactured by the method is also disclosed.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a continuation of International Application No. PCT / JP2004 / 016471, filed Oct. 29, 2004, which was published in the Japanese language on Jul. 7, 2005, under International Publication No. WO 2005 / 061762 A1 and the disclosure of which is incorporated herein by reference.BACKGROUND OF THE INVENTION [0002] The present invention relates to novel nano-array electrodes with a controlled nano-structure and photoelectric conversion devices using the same. [0003] Conventional electrooptic devices and photoelectrochemical devices usually contain functional electrodes wherein a semiconductor is formed as a film on a substrate with an electrically conductive film. The semiconductor is responsive to external factors such as heat, light and temperature changes and produces electrons, phonons, or complexes thereof depending on the environment. When these electrons, phonons, or complexes thereof propagate through a semiconductor layer...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/44H01L31/04B81C99/00C25D11/04C25D11/18H01L21/28H01L29/06H01L31/0352H01M14/00H10K99/00
CPCB82Y10/00C25D11/18H01L31/0352C25D11/045H01L51/0595Y02E10/542H01L31/03529Y02P70/50H10K10/701
Inventor ASANO, TSUYOSHIKUBO, TAKAYANISHIKITANI, YOSHINORI
Owner NIPPON OIL CORP
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