The invention discloses a
light emitting diode possessing a transparent extended
electrode structure and a manufacturing method thereof. The
light emitting diode comprises a permanent substrate, an epitaxial luminescent layer and a back
electrode. Graphical
processing is performed on an N-GaAs
ohmic contact layer in the epitaxial luminescent layer. A back side of the permanent substrate is provided with the back
electrode. On the permanent substrate, the permanent substrate is connected to the epitaxial luminescent layer through a first
metal bonding layer and a second
metal bonding layer. A mirror surface reflecting layer and a medium film layer are arranged between the second
metal bonding layer and the epitaxial luminescent layer. An extended electrode made of a transparent material wraps an armoring layer and the N-GaAs
ohmic contact layer in the whole epitaxial luminescent layer and forms
electric contact with a graph on the N-GaAs
ohmic contact layer. The extended electrode is provided with a main electrode. The
light emitting diode and the method of the invention possess advantages that electrode shading can be avoided; current expansion uniformity is increased; luminous efficiency is improved; electrode reliability is increased; the light emitting
diode is not easy to damage; reliability is good and the light emitting
diode is suitable for
mass production.