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Light emitting diode possessing transparent extended electrode structure and manufacturing method thereof

A technology of light-emitting diodes and extended electrodes, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of light-emitting diode extended electrodes, shading, vulnerability to damage and falling off, etc., to increase the uniformity of current expansion, avoid electrode shading, and reliability Good results

Inactive Publication Date: 2016-08-31
NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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  • Description
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  • Application Information

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Problems solved by technology

[0005] The second object of the present invention is to provide a method for preparing a light-emitting diode with a transparent extended electrode structure, which can improve the high brightness of the transposed structure. Red light AlGaInP light-emitting diode extended electrode shading and vulnerable to damage and fall off

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  • Light emitting diode possessing transparent extended electrode structure and manufacturing method thereof
  • Light emitting diode possessing transparent extended electrode structure and manufacturing method thereof
  • Light emitting diode possessing transparent extended electrode structure and manufacturing method thereof

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Embodiment Construction

[0029] The present invention will be described in further detail below in conjunction with the embodiments and with reference to the accompanying drawings.

[0030] A light emitting diode with a transparent extended electrode structure comprising a permanent substrate 201 , the first metal bonding layer 202 , the second metal bonding layer 114 , specular reflection layer 113 , Dielectric film layer 112 , epitaxial light-emitting layer, extended electrodes 203 , the main electrode 204 and back electrode 205 , on a permanent substrate 201 top, permanent substrate 201 through the first metal bonding layer 202 and second metal bonding layer114 Connected with the epitaxial light-emitting layer, in the second metal bonding layer 114 There is also a specular reflective layer between the epitaxial light-emitting layer 113 and dielectric film 112 , the epitaxial light-emitting layer includes from bottom to top: P-GaP current spreading layer ...

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Abstract

The invention discloses a light emitting diode possessing a transparent extended electrode structure and a manufacturing method thereof. The light emitting diode comprises a permanent substrate, an epitaxial luminescent layer and a back electrode. Graphical processing is performed on an N-GaAs ohmic contact layer in the epitaxial luminescent layer. A back side of the permanent substrate is provided with the back electrode. On the permanent substrate, the permanent substrate is connected to the epitaxial luminescent layer through a first metal bonding layer and a second metal bonding layer. A mirror surface reflecting layer and a medium film layer are arranged between the second metal bonding layer and the epitaxial luminescent layer. An extended electrode made of a transparent material wraps an armoring layer and the N-GaAs ohmic contact layer in the whole epitaxial luminescent layer and forms electric contact with a graph on the N-GaAs ohmic contact layer. The extended electrode is provided with a main electrode. The light emitting diode and the method of the invention possess advantages that electrode shading can be avoided; current expansion uniformity is increased; luminous efficiency is improved; electrode reliability is increased; the light emitting diode is not easy to damage; reliability is good and the light emitting diode is suitable for mass production.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor light-emitting diodes, in particular to a light-emitting diode with a transparent extended electrode structure and a preparation method thereof. Background technique [0002] Quaternary AlGaInP is a semiconductor material with direct wide bandgap, which has been widely used in the preparation of various optoelectronic devices. Since the light-emitting band of AlGaInP material can cover the red to yellow-green band of visible light, the high-brightness light-emitting diodes made of it have attracted extensive attention. Quaternary system AlGaInP red high-brightness light-emitting diodes have been widely used in many aspects such as outdoor displays, traffic lights, and car lights. Compared with AlGaInP LED chips with ordinary structures, high-brightness AlGaInP chips use bonding technology to realize substrate replacement, and use silicon substrates with good thermal performanc...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/38H01L33/48H01L33/60
CPCH01L33/60H01L33/005H01L33/38H01L33/48
Inventor 张银桥潘彬
Owner NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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