The invention discloses a
light emitting diode with sandwich-type current blocking structure, comprising a
sapphire substrate and a light emitting epitaxial layer, wherein the light emitting epitaxial layer is extended outwards on the
sapphire substrate and is composed of an n-GaN layer, an
active layer and a p-GaN layer; a first transparent conducting
oxide layer is formed above the p-GaN layer;a transparent insulating layer is positioned on the first transparent conducting
oxide layer and inwards retracts by 1-50 micrometers in relation to the first transparent conducting
oxide layer; a second transparent conducting oxide layer covers the transparent insulating layer, outwards expands in relation to the transparent insulating layer and is electrically connected with the first transparent conducting oxide layer; a p
electrode is connected with the second transparent conducting oxide layer; and an n
electrode is connected with the n-GaN layer. The ''inward retraction'' positioning ofthe transparent insulating layer ensures that the current transmission mode of the first transparent conducting oxide layer is transverse transmission with certain resistance from inside to outside; thus more injected current is distributed in the outer ring area of a
chip, the lighting intensity of the area is far more than that of the central area of the
chip; and light extraction efficiency isimproved because the extraction probability of the
photon side surface of the outer ring area of the
chip is higher.